Various embodiments of the present disclosure are directed towards an integrated circuit (IC) in which cavities separate wires of an interconnect structure. For example, a conductive feature overlies a substrate, and an intermetal dielectric (IMD) layer overlies the conductive feature. A first wire and a second wire neighbor in the IMD layer and respectively have a first sidewall and a second sidewall that face each other while being separated from each other by the IMD layer. Further, the first wire overlies and borders the conductive feature. A first cavity and a second cavity further separate the first and second sidewalls from each other. The first cavity separates the first sidewall from the IMD layer, and the second cavity separates the second sidewall from the IMD layer. The cavities reduce parasitic capacitance between the first and second wires and hence resistance-capacitance (RC) delay that degrades IC performance.

The present disclosure provides a method for preparing a semiconductor device with air spacer for decreasing electrical coupling. The method comprises: forming a plurality of composite pillars over a substrate, wherein the composite pillars include conductive pillars and dielectric caps over the conductive pillars; transforming a sidewall portion of the conductive pillar into a first transformed portion; removing the first transformed portion such that a width of the dielectric cap is greater than a width of a remaining portion of the conductive pillar; forming a supporting pillar between adjacent two of the plurality of composite pillars; and forming a sealing layer at least contacts a top portion of the supporting pillar and a top of the dielectric cap, and air spacers are formed between the sealing layer, the supporting pillar and the remaining portions of the conductive pillars.

A semiconductor device manufacturing method includes: providing a semiconductor base; patterning the first medium layer to form a groove extending along the base in the base; forming a first auxiliary layer and a first metal layer sequentially in the groove, where the first metal layer is located on the side of the first auxiliary layer towards the first medium layer; thinning the base on the second surface of the base to expose the first auxiliary layer; removing the first auxiliary layer to form a first opening; and forming a second metal layer on the second surface of the base, where the second metal layer fills the first opening.

The present disclosure relates to an integrated chip including a lower conductive wire within a first dielectric layer over a substrate. A second dielectric layer is over the first dielectric layer. A conductive via is over the lower conductive wire and within the second dielectric layer. A conductive liner layer lines sidewalls of the via. A barrier layer lines sidewalls of the conductive liner layer and lines sidewalls of the second dielectric layer. The conductive liner layer is laterally separated from the second dielectric layer by the barrier layer. The conductive liner layer vertically extends between sidewalls of the barrier layer from a bottom surface of the conductive via to a top surface of the lower conductive wire.

The present disclosure relates to an integrated chip comprising a substrate. A first conductive wire is over the substrate. A second conductive wire is over the substrate and is adjacent to the first conductive wire. A first dielectric cap is laterally between the first conductive wire and the second conductive wire. The first dielectric cap laterally separates the first conductive wire from the second conductive wire. The first dielectric cap includes a first dielectric material. A first cavity is directly below the first dielectric cap and is laterally between the first conductive wire and the second conductive wire. The first cavity is defined by one or more surfaces of the first dielectric cap.

A method of forming a semiconductor device structure is provided. The method includes forming a masking structure with first openings over a semiconductor substrate and correspondingly forming metal layers in the first openings. The method also includes recessing the masking structure to form second openings between the metal layers and forming a sacrificial layer surrounded by a first liner in each of the second openings. In addition, after forming a second liner over the sacrificial layer in each of the second openings, the method includes removing the sacrificial layer in each of the second openings to form a plurality of air gaps therefrom.

An integrated circuit (IC) is provided that includes a plurality of physical unclonable function (PUF) structures located in a PUF area. Each PUF structure of the plurality of PUF structures includes at least a PUF top electrically conductive structure containing random sidewall voids and random line openings which can provide an encrypted security code to the IC. The IC further includes a plurality of memory structures located in a memory area that is located laterally adjacent to the PUF area. Each memory structure of the plurality of memory structures includes a memory element sandwiched between a bottom electrically conductive structure and a top electrically conductive structure. The top electrically conductive structures are devoid of sidewall voids and line openings.

A first dielectric layer is formed on a semiconductor structure. The first dielectric layer has a hardness higher than 10 GPa and a dielectric constant in a range between 1.0 and 4.0. A trench is formed in the first dielectric layer. A conductive feature is formed in the trench in contact with the semiconductor structure. A second dielectric layer is formed over the first dielectric layer and the conductive feature. A via structure is formed in the second dielectric layer in contact with the conductive feature.

Electronic packages and related methods are disclosed. An example electronic package apparatus includes a substrate and an electronic component. A protective material is positioned on a first surface, a second surface and all side surfaces of the electronic component to encase the electronic component. An enclosure is coupled to the substrate to cover the protective material and the electronic component.

A method for fabricating a semiconductor device includes: forming a first conductive structure over a substrate; forming a multi-layer spacer including a non-conformal sacrificial spacer on both sidewalls of the first conductive structure; forming a second conductive structure adjacent to the first conductive structure with the multi-layer spacer therebetween; forming an air gap by removing the non-conformal sacrificial spacer; forming a capping layer covering the second conductive structure and the air gap; forming an opening that exposes a top surface of the second conductive structure by etching the capping layer; and forming a conductive pad coupled to the second conductive structure in the opening.