A method of fabricating a semiconductor device is provided. The method may include forming a first interlayer insulating film on a substrate, forming a second interlayer insulating film on the first interlayer insulating film, and forming a third interlayer insulating film on the second interlayer insulating film. Different amounts of carbon may be present in each of the first, second, and third interlayer insulating films. The third interlayer insulating film may be used as a mask pattern to form a via trench that extends at least partially into the first interlayer insulating film and the second interlayer insulating film. Supplying a carbon precursor may be interrupted between the forming of the second and third interlayer insulating films, such that the second interlayer insulating film and the third interlayer insulating film may have a discontinuous boundary therebetween.

A semiconductor structure is disclosed. The semiconductor structure includes a base layer and an etch stop layer having a plurality of elements and in physical contact with the base layer. The etch stop layer have a Boron (B) element configured to improve the etch profile of the etch stop layer.

A method is presented for reducing a resistance-capacitance product and RIE lag in a semiconductor device. The method includes depositing a first ultra-low-k (ULK) material over a dielectric cap, the first ULK material defining a recess, filling the recess with a second ULK material, the second ULK material being different than the first ULK material, where the first and second ULK materials are formed in a common metal level of a back-end-of-the-line (BEOL) structure, forming first trenches within the first ULK material and second trenches within the second ULK material, and filling the first and second trenches with a conductive material.

Back end of line metallization structures and processes of fabricating the metallization structures generally include a top via integration scheme. The top via integration scheme integrally forms the via on top of trench. Thus, the via is fully aligned and can be of a desired critical dimension.

A semiconductor device and a method of forming the same are provided. A method includes forming a gate over a semiconductor structure. An epitaxial source/drain region is formed adjacent the gate. A dielectric layer is formed over the epitaxial source/drain region. An opening extending through the dielectric layer and exposing the epitaxial source/drain region is formed. A conductive material is non-conformally deposited in the opening. The conductive material fills the opening in a bottom-up manner.

The present disclosure provides a method for forming a semiconductor device. The method includes providing a substrate having a metal pattern, and forming an etch stop layer over the substrate. The etch stop layer includes a first material. The method also includes forming a diffused area in the etch stop layer by diffusing a second material from the metal pattern to the etch stop layer, and forming an insulative layer over the etch stop layer. The diffused area includes a lower etch rate to a first etchant than the insulative layer. A semiconductor device is also provided.

Various self-aligned interconnect structures are disclosed herein. An exemplary interconnect structure includes a first dielectric layer disposed over a substrate; a first conductive feature disposed in the first dielectric layer; an etch stop layer disposed over a top surface of the first dielectric layer and a top surface of the first conductive feature; a second dielectric layer disposed over the first dielectric layer; and a second conductive feature disposed in the second dielectric layer. The top surface of the first conductive feature is lower than the top surface of the first dielectric layer. The etch stop layer includes a portion that extends between the top surface of the first conductive feature and the top surface of the first dielectric layer, on which the second conductive feature may or may not be disposed. In some implementations, the second conductive feature may be a via feature.

A semiconductor device and a method of manufacturing a semiconductor device, the semiconductor device including a substrate; a first insulating interlayer on the substrate; a first wiring in the first insulating interlayer on the substrate; an insulation pattern on a portion of the first insulating interlayer adjacent to the first wiring, the insulation pattern having a vertical sidewall and including a low dielectric material; an etch stop structure on the first wiring and the insulation pattern; a second insulating interlayer on the etch stop structure; and a via extending through the second insulating interlayer and the etch stop structure to contact an upper surface of the first wiring.

Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a first die having a first surface and an opposing second surface, wherein the first die is in a first dielectric layer; a magnetic core inductor, having a first surface and an opposing second surface, in the first dielectric layer, wherein the magnetic core inductor may include a first conductive pillar at least partially surrounded by a magnetic material, and a second conductive pillar coupled to the first conductive pillar; and a second die having a first surface and an opposing second surface, wherein the second die is in a second dielectric layer, and wherein the first surface of the second die is coupled to the second surface of the magnetic core inductor.

Embodiments include transistor devices and a method of forming the transistor devices. A transistor device includes a first dielectric over a substrate, and vias on a first metal layer, where the first metal layer is on an etch stop layer that is on the first dielectric. The transistor device also includes a second dielectric over the first metal layer, vias, and etch stop layer, where the vias include sidewalls, top surfaces, and bottom surfaces, and stacked transistors on the second dielectric and the top surfaces of the vias, where the sidewalls and top surfaces of the vias are positioned within a footprint of the stacked transistors. The stacked transistors include gate electrodes and first and second transistor layers. The first metal layer includes conductive materials including tungsten or cobalt. The footprint may include a bottom surface of the first transistor layer and a bottom surface of the gate electrodes.