A method for forming a semiconductor structure includes forming a first cap layer over a metal layer. The method also includes patterning the metal layer and the first cap layer to form openings exposing the gate structure, and forming a first dielectric layer in the openings, and patterning the first cap layer to form a via cap plug over the metal layer. The method also includes forming a second dielectric layer over the via cap plug and the metal layer, and forming a trench in the second dielectric material to expose the via cap plug. The method also includes removing the via cap plug to enlarge the trench and filling the trench with a conductive material.

Embodiments of the present disclosure provide a semiconductor structure and a semiconductor structure manufacturing method. The semiconductor structure includes: a base including an array region and a peripheral region, the peripheral region having a first isolation structure, the array region having a second isolation structure, a top opening area of the first isolation structure being greater than that of the second isolation structure; the first isolation structure having a first groove, and a first insulation structure configured to fill the first groove; and the first insulation structure including at least a top isolation layer, a top surface of the top isolation layer being flush with a top surface of the base, and the top isolation layer being made of at least a low dielectric constant material.

The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a first semiconductor structure including a plurality of first conductive features adjacent to a top surface of the first semiconductor structure, a second semiconductor structure positioned above the first semiconductor structure and including a plurality of second conductive features adjacent to a bottom surface of the second semiconductor structure, and a connection structure positioned between the first semiconductor structure and the second semiconductor structure. The connection structure includes a connection layer electrically coupled to the plurality of first conductive features and the plurality of second conductive features, and a plurality of first porous interlayers positioned between the plurality of first conductive features and the plurality of second conductive features. A porosity of the plurality of first porous interlayers is between about 25% and about 100%.

Various semiconductor chip metallization layers and methods of manufacturing the same are disclosed. In aspect, a semiconductor chip is provided that includes a substrate, plural metallization layers on the substrate, a first conductor line in one of the metallization layers and a second conductor line in the one of the metallization layers in spaced apart relation to the first conductor line, each of the first conductor line and the second conductor line has a first line portion and a second line portion stacked on the first line portion, and a dielectric layer that has a portion positioned between the first conductor line and a second line, the portion has an air gap.

A structure includes a first dielectric film and a second dielectric film. The second dielectric film is formed on and in contact with the first dielectric film, in which a first pore is formed between the first dielectric film and the second dielectric film, and a thickness of the first dielectric film is smaller than a diameter of the first pore.

Apparatuses and methods to provide a fully self-aligned via are described. Some embodiments of the disclosure utilize a cap layer to protect an insulating layer in order to minimize bowing of the side walls during metal recess in a fully self-aligned via. The cap layer can be selectively removed, thus increasing the aspect ratio, by exposing the substrate to a hot phosphoric acid solution.

Split ash processes are disclosed to suppress damage to low-dielectric-constant (low-K) layers during via formation. For one embodiment, ash processes used to remove an organic layer, such as an organic planarization layer (OPL), associated with via formation are split into multiple ash process steps that are separated by intervening process steps. A first ash process is performed to remove a portion of an organic layer after vias have been partially opened to a low-K layer. Subsequently, after the vias are fully opened through the low-K layer, an additional ash process is performed to remove the remaining organic material. Although some damage may still occur on via sidewalls due to this split ash processing, the damage is significantly reduced as compared to prior solutions, and device performance is improved. Target critical dimension (CD) for vias and effective dielectric constants for the low-K layer are achieved.

An interconnect structure and a method of forming an interconnect structure are disclosed. The interconnect structure includes a lower etch stop layer (ESL); an upper low-k (LK) dielectric layer over the lower ESL; a first conductive feature in the upper LK dielectric layer, wherein the first conductive feature has a first metal line and a dummy via contiguous with the first metal line, the dummy via extending through the lower ESL; a first gap along an interface of the first conductive feature and the upper LK dielectric layer; and an upper ESL over the upper LK dielectric layer, the first conductive feature, and the first gap.

A method includes forming a metallic interconnect structure on a semiconductor substrate where the metallic interconnect structure comprises a plurality of metal lines with adjacent metal lines separated by a gap therebetween. The method further includes selectively depositing a first low-k dielectric material onto the semiconductor substrate and onto exposed surfaces of the metal lines of the metal interconnect structure to form a barrier on at least the metal lines. The barrier is configured to minimize oxidation and diffusion of metal of the metal lines. The method also includes depositing a flowable second low-k dielectric material onto the semiconductor structure to form a dielectric layer encapsulating the barrier and the metallic interconnect structure.

Various semiconductor chip metallization layers and methods of manufacturing the same are disclosed. In aspect, a semiconductor chip is provided that includes a substrate, plural metallization layers on the substrate, a first conductor line in one of the metallization layers and a second conductor line in the one of the metallization layers in spaced apart relation to the first conductor line, each of the first conductor line and the second conductor line has a first line portion and a second line portion stacked on the first line portion, and a dielectric layer that has a portion positioned between the first conductor line and a second line, the portion has an air gap.