H01L23/4926

HEAVILY DOPED SEMICONDUCTOR DEVICES FOR POWER DISTRIBUTION
20250054854 · 2025-02-13 ·

A device including a first integrated device die and a semiconductor device. The first integrated device die can include a die insulating layer and a die conductive feature at least partially embedded in the die insulating layer. The semiconductor device can include a first insulating layer on the first surface, a device conductive feature at least partially embedded in the first insulating layer, and a first heavily doped semiconductor material electrically connected to the device conductive feature. The die conductive feature can be connected to power or ground through at least the first heavily doped semiconductor material.

Heat sink for cooling of power semiconductor modules

A heat sink for cooling at least one power semiconductor module, and that includes a basin for containing a cooling liquid. The basin has a contact rim for receiving the base plate and that includes a surface that is sloped inwards to the basin.