A semiconductor package that includes a conductive can, a power semiconductor device electrically and mechanically attached to the inside surface of the can, and an IC semiconductor device copackaged with the power semiconductor device inside the can.

An electronic component includes one or more circuits having electrical connections coupled therewith. The electrical connections include a lead frame as well as electrical wires coupling the circuit or circuits to respective portions of the lead frame. The electrical wires may be formed as one piece with the respective portion of the lead frame without joints therebetween, e.g., by 3D printing.

A semiconductor device includes a metal member, a first semiconductor chip, a second semiconductor chip, a first solder and a second solder. A quantity of heat generated in the first semiconductor chip is greater than the second semiconductor chip. The second semiconductor chip is formed of a material having larger Young's modulus than the first semiconductor chip. The first semiconductor chip has a first metal layer connected to the metal member through a first solder at a surface facing the metal member. The second semiconductor chip has a second metal layer connected to the metal member through a second solder at a surface facing the metal member. A thickness of the second solder is greater than a maximum thickness of the first solder at least at a portion of the second solder corresponding to a part of an outer peripheral edge of the second metal layer.

An electronic component includes a leadframe and a first semiconductor die. The leadframe includes a leadframe top side, a leadframe bottom side opposite the leadframe top side, and a top notch at the leadframe top side. The top notch includes a top notch base located between the leadframe top side and the leadframe bottom side, and defining a notch length of the top notch, and can also include a top notch first sidewall extended, along the notch length, from the leadframe top side to the top notch base. The first semiconductor die can include a die top side a die bottom side opposite the die top side and mounted onto the leadframe top side, and a die perimeter. The top notch can be located outside the die perimeter. Other examples and related methods are also disclosed herein.

An embodiment related to a device. The device includes a first die with first and second die surfaces. The second die surface is bonded to a first die attach pad (DAP) disposed on a first substrate surface of a package substrate and the first die surface includes a first die contact pad. The device also includes a first clip bond including a first clip bond horizontal planar portion attached to the first die contact pad on the first die surface, and a first clip bond vertical portion disposed on an edge of the first clip bond horizontal planar portion. The first clip bond vertical portion is attached to a first substrate bond pad on the first substrate surface. The device further includes a first conductive clip-die bonding layer with spacers on the first die contact pad of the first die. The first conductive clip-die bonding layer bonds the first clip bond horizontal planar portion to the first die contact pad, and the spacers maintain a uniform Bond Line Thickness (BLT) of the first conductive clip-die bonding layer.

A package is disclosed. In one example, the package comprises a substrate having at least one first recess on a front side and at least one second recess on a back side, wherein the substrate is separated into a plurality of separate substrate sections by the at least one first recess and the at least one second recess, an electronic component mounted on the front side of the substrate, and a single encapsulant filling at least part of the at least one first recess and at least part of the at least one second recess. The encapsulant fully circumferentially surrounds sidewalls of at least one of the substrate sections.

This semiconductor module includes: a base plate formed in a plate shape; a terminal member; an electronic component joined to one surface of the base plate; and mold resin sealing the base plate, the terminal member, and the electronic component. The base plate and the terminal member are conductive members and are arranged with an interval therebetween on the same plane. Each of the base plate and the terminal member has a body portion and a terminal portion exposed to outside from the mold resin. The base plate has a through hole at an extension part which is a part extending toward the terminal portion and connected to the terminal portion, in the body portion.

A semiconductor chip is arranged over a substrate in the form of a leadframe. A set of current-carrying formations configured as conductive ribbons are coupled to the semiconductor chip. The substrate does not include electrically conductive formations for electrically coupling the conductive ribbons to each other. Electrical contacts are formed via wedge bonding, for instance, between adjacent ones of the conductive ribbons so that a contact is provided between the adjacent ones of the conductive ribbons in support of a multi-formation current-carrying channel.

Pre-molded leadframes for semiconductor devices are manufactured by molding electrically insulating material onto a laminar sculptured structure of electrically conductive material including semiconductor device component die pads. First and second die pads are coupled via a first extension from the first die pad and a second extension from the second die pad at neighboring locations on the front surface of the leadframe and a bridge formation coupling the first and second extensions at the bacpk surface of the leadframe. The bridge formation provides a sacrificial connection between the first and second extensions which is selectively removed after molding the electrically insulating material in order to decouple the first and second die pads from each other. The removal of the sacrificial connection leaves a cavity formed at the second surface of the leadframe without affecting the shape of the die pads.

Semiconductor chips to be singulated to individual semiconductor devices are arranged onto respective adjacent areas of a mounting substrate such as a pre-molded leadframe. The mounting substrate is made of a laminar, electrically conductive sculptured structure with molded electrically insulating material. Electrically conductive side formations in the adjacent areas of the mounting substrate include first and second pads at front and back surfaces, respectively, of the mounting substrate. The first contact pads at the front surface of the substrate include narrowed portions having side recesses. The second contact pads at the back surface of the substrate include widened portions having side extensions adjacent the side recesses. The electrically insulating material extends into the side recesses to provide anchoring formations of the insulating material to the electrically conductive sculptured structure of the mounting substrate.