A structure of a substrate is provided for application in an electric power module. The substrate includes element regions, on which a plurality of semiconductor elements are arranged, a center region that defines a space among the element regions, an input terminal region, on which an input terminal for applying an electric current to the substrate is disposed, and one or more slit insulation portions that are defined to face toward sides, respectively, of the element regions adjacent to the input terminal region, which are among the element regions. The slit insulation portions extend toward the center region in such a manner that an electric current applied through the input terminal region flows into the center region.

A vehicle power module for converting power includes a lead frame configured to receive power from outside or to output power to the outside and a substrate configured to be bonded with the lead frame. The substrate includes a pattern layer disposed to be electrically connected to the lead frame, a conductive layer disposed apart from the pattern layer and configured to be electrically grounded, and an insulating layer disposed between the conductive layer and the pattern layer to insulate the pattern layer from the conductive layer. The pattern layer further protrudes toward the lead frame than the insulating layer.

A substrate for semiconductor elements includes a terminal part including a first surface, a second surface opposite to the first surface, and side surfaces joining the first surface and the second surface, and a resin part covering the side surfaces and exposing the first surface of the terminal part. The resin part has a multi-layer structure including a first resin and a second resin, and the first resin is provided in contact with the side surfaces of the terminal part. The first resin and the second resin include a filler, and an amount of the filler included in the first resin is smaller than an amount of the filler included in the second resin.

In one instance, a semiconductor package includes a metal leadframe having a first plurality of openings extending partially into the leadframe from the first side and a second plurality of openings extending partially into the leadframe from the second side together forming a plurality of leads. A pre-mold compound is positioned in the second plurality of openings that at least partially supports the plurality of leads. The semiconductor package has a plurality of bumps extending from the landing sites to a semiconductor die and a molding compounding at least partially covering the plurality of bumps and the metal leadframe. Other packages and methods are disclosed.

A semiconductor die includes first pads, switches that are electrically connected with the first pads, respectively, a test signal generator that generates test signals and to transmit the test signals to the switches, internal circuits that receive first signals through the first pads and the switches, to perform operations based on the first signals, and to output second signals through the switches and the first pads based on a result of the operations, and a switch controller that controls the switches so that the first pads communicate with the test signal generator during a test operation and that the first pads communicate with the internal circuits after a completion of the test operation.

A lead frame includes a die pad having a pad top surface and a pad bottom surface opposite to the top pad surface, a plurality of leads, each having a top lead surface and a bottom lead surface opposite to the top lead surface and disposed around the die pad, and a first molding compound disposed between the die pad and each of the leads. The first molding compound exposes the top pad surface of the die pad by covering a portion of the periphery of the top pad surface of the die pad. A method for manufacturing the lead frame is also disclosed.

In one instance, a semiconductor package includes a metal leadframe having a first plurality of openings extending partially into the leadframe from the first side and a second plurality of openings extending partially into the leadframe from the second side together forming a plurality of leads. A pre-mold compound is positioned in the second plurality of openings that at least partially supports the plurality of leads. The semiconductor package has a plurality of bumps extending from the landing sites to a semiconductor die and a molding compounding at least partially covering the plurality of bumps and the metal leadframe. Other packages and methods are disclosed.

A method of producing a molded semiconductor package includes: attaching a first load terminal at a first side of a semiconductor die to a leadframe, the semiconductor die having a second load terminal at a second side opposite the first side and a control terminal at the first side or the second side; encapsulating the semiconductor die in a laser-activatable mold compound so that the leadframe is at least partly exposed from the laser-activatable mold compound at a first side of the molded semiconductor package, and the second load terminal is at least partly exposed from the laser-activatable mold compound at a second side of the molded semiconductor package opposite the first side; and laser activating a first region of the laser-activatable mold compound to form a first laser-activated region which forms part of an electrical connection to the second load terminal.

A method of producing a molded semiconductor package includes: attaching a first load terminal at a first side of a semiconductor die to a leadframe, the semiconductor die having a second load terminal at a second side opposite the first side and a control terminal at the first side or the second side; encapsulating the semiconductor die in a laser-activatable mold compound so that the leadframe is at least partly exposed from the laser-activatable mold compound at a first side of the molded semiconductor package, and the second load terminal is at least partly exposed from the laser-activatable mold compound at a second side of the molded semiconductor package opposite the first side; and laser activating a first region of the laser-activatable mold compound to form a first laser-activated region that is electrically conductive.

A method of producing a molded semiconductor package includes: attaching a first load terminal at a first side of a semiconductor die to a leadframe, the semiconductor die having a second load terminal at a second side opposite the first side and a control terminal at the first side or the second side; encapsulating the semiconductor die in a laser-activatable mold compound so that the leadframe is at least partly exposed from the laser-activatable mold compound at a first side of the molded semiconductor package, and the second load terminal is at least partly exposed from the laser-activatable mold compound at a second side of the molded semiconductor package opposite the first side; and laser activating a first region of the laser-activatable mold compound to form a first laser-activated region which forms part of an electrical connection to the second load terminal.