A current sensor integrated circuit includes a lead frame having a primary conductor and at least one secondary lead, a semiconductor die disposed adjacent to the primary conductor, an insulation structure disposed between the primary conductor and the semiconductor die, and a non-conductive insulative material enclosing the semiconductor die, the insulation structure, a first portion of the primary conductor, and a first portion of the at least one secondary lead to form a package. The first portion of the at least one secondary lead (between a first end proximal to the primary conductor and a second end proximal to the second, exposed portion of the at least one secondary lead) has a thickness that is less than a thickness of the second, exposed portion of the least one secondary lead. A distance between the second, exposed portion of the primary conductor and the second, exposed portion of the at least one secondary lead is at least 7.2 mm.

Provided are a semiconductor module capable of further increasing an effect of canceling out a parasitic inductance by a current and a power converter including the semiconductor module. The semiconductor module includes a first leadframe, a second leadframe, a third leadframe, an insulating material, a first semiconductor element, and a second semiconductor element. The first leadframe is a plate-shaped wiring path to which a first potential is applied. The second leadframe is a plate-shaped wiring path including an output terminal. The third leadframe is a plate-shaped wiring path to which a second potential is applied. The first semiconductor element is directly joined to the first leadframe with a joint material therebetween, and the second semiconductor element is directly joined to the second leadframe with a joint material therebetween. The first leadframe and the second leadframe face each other with the insulating material therebetween.

A packaged semiconductor device includes a routable molded lead frame structure with a surface finish layer. In one embodiment, the routable molded lead frame structure includes a first laminated layer including the surface finish layer, vias connected to the surface finish layer, and a first resin layer covering the vias leaving the top surface of the surface finish layer exposed. A second laminated layer includes second conductive patterns connected to the vias, bump pads connected to the second conductive patterns, and a second resin layer covering one side of the first resin layer, the second conductive patterns and the bump pads. A semiconductor die is electrically connected to the surface finish layer and an encapsulant covers the semiconductor die and another side of the first resin layer. The surface finish layer provides a customizable and improved bonding structure for connecting the semiconductor die to the routable molded lead frame structure.

Embodiments of the present invention are directed to a method of manufacturing a semiconductor package with an internal routing circuit. The internal routing circuit is formed from multiple molding routing layers in a leadframe land grid array semiconductor package by using a laser to blast away un-designed conductive areas to create conductive paths on each molding compound layer of the semiconductor package.

A power module includes an upper substrate comprising a plurality of circuit pattern areas made of a metal and a dielectric area disposed between each of the plurality of circuit pattern areas; a lower substrate including a plurality of circuit pattern areas made of a metal and a dielectric area disposed between each of the plurality of circuit pattern areas; and a semiconductor element having an upper terminal and a lower terminal, the upper terminal and the lower terminal being bonded to a lower surface of the upper substrate and an upper surface of the lower substrate, respectively.

A semiconductor device includes a semiconductor layer that has a main surface including a defined region defined by a trench, a trench insulation layer formed in the trench, a field insulation layer that covers the defined region away from the trench, and a bridge insulation layer that is formed in a region between the trench and the field insulation layer in the defined region and that is connected to the trench insulation layer and to the field insulation layer.

A packaged semiconductor device includes a routable molded lead frame structure with a surface finish layer. In one embodiment, the routable molded lead frame structure includes a first laminated layer including the surface finish layer, vias connected to the surface finish layer, and a first resin layer covering the vias leaving the top surface of the surface finish layer exposed. A second laminated layer includes second conductive patterns connected to the vias, bump pads connected to the second conductive patterns, and a second resin layer covering one side of the first resin layer, the second conductive patterns and the bump pads. A semiconductor die is electrically connected to the surface finish layer and an encapsulant covers the semiconductor die and another side of the first resin layer. The surface finish layer provides a customizable and improved bonding structure for connecting the semiconductor die to the routable molded lead frame structure.

A method for forming a conductive structure is disclosed, the method comprising the steps of: forming a metallic frame having a plurality of metal parts separated from each other; forming an insulating layer on the top surface of the plurality of metal parts; and forming a conductive pattern layer on the insulating layer for making electrical connections with at least one portion of the plurality of metal parts.

A three-dimensional package structure includes an energy storage element, a semiconductor package body and a shielding layer. The semiconductor package body has a plurality of second conductive elements and at least one control device inside. The energy storage element is disposed on the semiconductor package body. The energy storage element including a magnetic body is electrically connected to the second conductive elements. The semiconductor package body or the energy storage element has a plurality of first conductive elements to be electrically connected to an outside device. The three-dimensional package structure is applicable to a POL, (Point of Load) converter.

A semiconductor device includes: semiconductor elements and; a lead frame including a mount having an upper surface over which the semiconductor elements and are mounted; a sealing resin sealing the lead frame and the semiconductor elements and so that outer leads and of the lead frame protrude outwardly; and a resin wall located on an inner lead between the outer lead and the mount of the lead frame. A vertical thickness of the resin wall is greater than a vertical thickness from a lower surface of the sealing resin to a lower end of the lead frame.