A process for batch fabrication of circuit components is disclosed via simultaneously packaging multiple circuit component dice in a matrix. Each die has electrodes on its tops and bottom surfaces to be electrically connected to a corresponding electrical terminal of the circuit component it's packaged in. For each circuit component in the matrix, the process forms preparative electrical terminals on a copper substrate. Component dice are pick-and-placed onto the copper substrate with their bottom electrodes landing on corresponding preparative electrical terminal. Horizontal conductor plates are then placed horizontally on top of the circuit component dice, with bottom surface at one end of each plate landing on the dice's top electrode. An opening is formed at the opposite end and has vertical conductive surfaces. A vertical conductor block is placed into the opening and lands on the preparative electrical terminal, and the opening's vertical conductive surfaces facing the top end side surface of the vertical block. A thermal reflow then simultaneously melts pre-applied soldering material so that each circuit component die and its vertical conductor block are soldered to the copper substrate below and its horizontal conductor plate above.

An electronic device includes a support member and a mount member mounting on the support member. The support member and the mount member are sealed by a resin member. The support member includes a surface having a laser irradiation mark. The mount member includes a surface having a rough portion with an accumulation of material of the support member.

Semiconductor chips are arranged on an elongated substrate and encapsulated by an insulating encapsulation. Electrically conductive formations and electrically conductive plating lines are plated on the insulating encapsulation using, for example, Laser Direct Structuring (LDS) or Direct Copper Interconnect (DCI) material. The electrically conductive plating lines include first transverse plating lines as well as second plating lines branching out from the first plating lines towards the electrically conductive formations. A first partial cutting step is then performed to form grooves which remove the first plating lines. An insulating material is dispensed in the grooves to encapsulate the end portions of the second plating lines. A second cutting step median along the groove and through the elongate substrate is performed to produce singulated semiconductor devices (such as “die pad up” Quad-Flat No-lead (QFN) packages). End portions of the second plating lines are encapsulated by the insulating material.

A lead frame for an integrated electronic device includes a die pad made of a first metallic material. A top coating layer formed by a second metallic material is arranged on a top surface of the die pad. The second metallic material has an oxidation rate lower than the first metallic material. The top coating layer leaves exposed a number of corner portions of the top surface of the die pad. A subsequent heating operation, for example occurring in connection with wirebonding, causes an oxidized layer to form on the corner portions of the top surface of the die pad at a position in contact with the top coating layer.

A package structure includes a metal member and a resin member. The metal member has an obverse surface facing one side in a first direction. The resin member is disposed in contact with at least a portion of the obverse surface. The obverse surface has a roughened area. The roughened area includes a plurality of first trenches recessed from the obverse surface, each of the first trenches having a surface with a greater roughness than the obverse surface. The plurality of first trenches extend in a second direction perpendicular to the first direction and are next to each other in a third direction perpendicular to the first direction and the second direction. The plurality of first trenches are filled up with the resin member.

A semiconductor device manufacturing method includes a preparation step and a sinter bonding step. In the preparation step, a sinter-bonding work having a multilayer structure including a substrate, semiconductor chips, and sinter-bonding material layers is prepared. The semiconductor chips are disposed on, and will bond to, one side of the substrate. Each sinter-bonding material layer contains sinterable particles and is disposed between each semiconductor chip and the substrate. In the sinter bonding step, a cushioning sheet having a thickness of 5 to 5000 μm and a tensile elastic modulus of 2 to 150 MPa is placed on the sinter-bonding work, the resulting stack is held between a pair of pressing faces, and, in this state, the sinter-bonding work between the pressing faces undergoes a heating process while being pressurized in its lamination direction, to form a sintered layer from each sinter-bonding material layer.

A semiconductor package structure, including a lead frame, a die disposed on the front side of the lead frame, and a molding piece disposed on the lead frame and encapsulates the die, wherein the lead frame is provided with two extension portions extending respectively from two sides of the molding piece, and the extension portion is provided with recessed front surface and back surface on which a plating layer is formed.

A lead frame includes a die pad, a plurality of leads, a frame member, and at least one wire. The frame member includes two first connection bars and two second connection bars. The plurality of leads include a plurality of specific leads. Each of the specific leads is connected to the first connection bar. At least one of the specific leads is connected to the second connection bar via the at least one wire.

An electronic package, a semiconductor package structure and a method for manufacturing the same are provided. The electronic package includes a carrier, a first electronic component, an electrical extension structure, and an encapsulant. The carrier has a first face and a second face opposite to the first face. The first electronic component is adjacent to the first face of the carrier. The electrical extension structure is adjacent to the first face of the carrier and defines a space with the carrier for accommodating the first electronic component, the electrical extension structure is configured to connect the carrier with an external electronic component. The encapsulant encapsulates the first electronic component and at least a portion of the electrical extension structure.

A package substrate includes a metallic lead frame that includes first frame portions in a lattice shape along planned dividing lines and a plurality of first electrode portions extending from each of the first frame portions, a connection frame that includes second frame portions in a lattice shape along the planned dividing lines and a plurality of second electrode portions extending from each of the second frame portions, the connection frame being superposed on a side of the lead frame on which a device chip is disposed, and a mold resin that covers the device chip and the connection frame. Distal ends of the second electrode portions are formed in a protruding shape and connected to the first electrode portions, and the connection frame forms an electrode when electroplating processing is applied to sections of the first electrode portions.