Patent classifications
H01L23/49816
PACKAGE DEVICE
A package device is provided and includes a first circuit layer, a first isolation layer, and a first de-warpage layer. The first circuit layer and the first isolation layer are stacked on each other. At least a portion of the first de-warpage layer is disposed between the first circuit layer and the first isolation layer.
SHIELDED DEEP TRENCH CAPACITOR STRUCTURE AND METHODS OF FORMING THE SAME
A moat trench laterally surrounding a device region is formed in a substrate. A conductive metallic substrate enclosure structure is formed in the moat trench. Deep trenches are formed in the substrate, and a trench capacitor structure is formed in the deep trenches. The substrate may be thinned by removing a backside portion of the substrate. A backside surface of the conductive metallic substrate enclosure structure is physically exposed. A backside metal layer is formed on a backside surface of the substrate and a backside surface of the conductive metallic substrate enclosure structure. A metallic interconnect enclosure structure and a metallic cap plate may be formed to provide a metallic shield structure configured to block electromagnetic radiation from impinging into the trench capacitor structure.
INFO PACKAGES INCLUDING THERMAL DISSIPATION BLOCKS
A method of forming a semiconductor device includes forming a first interconnect structure over a carrier; forming a thermal dissipation block over the carrier; forming metal posts over the first interconnect structure; attaching a first integrated circuit die over the first interconnect structure and the thermal dissipation block; removing the carrier; attaching a semiconductor package to the first interconnect structure and the thermal dissipation block using first electrical connectors and thermal dissipation connectors; and forming external electrical connectors, the external electrical connectors being configured to transmit each external electrical connection into the semiconductor device, the thermal dissipation block being electrically isolated from each external electrical connection.
ELECTRONIC DEVICE AND MANUFACTURING METHOD THEREOF
The present disclosure provides an electronic device and a manufacturing method thereof. The electronic device includes a connecting element. The connecting element includes a first conductive line segment, a second conductive line segment, and a first connecting line segment. The first conductive line segment is electrically connected to the second conductive line segment through the first connecting line segment. In a vertical projection direction, the first connecting line segment has a first height, the first conductive line segment has a second height, and the first height is different from the second height.
PRINTED CIRCUIT BOARD AND SEMICONDUCTOR PACKAGE WHICH INCLUDE MULTI-LAYERED PHOTOSENSITIVE INSULATING LAYER, AND METHOD OF MANUFACTURING THE SAME
A printed circuit board may include a substrate body portion, conductive patterns on a top surface of the substrate body portion, and a photosensitive insulating layer on the top surface of the substrate body portion and including an opening exposing at least one of the conductive patterns. The photosensitive insulating layer includes first to third sub-layers stacked sequentially. The first sub-layer includes an amine compound or an amide compound A refractive index of the second sub-layer is lower than a refractive index of the third sub-layer. A photosensitizer content of the second sub-layer is higher than a photosensitizer content of the third sub-layer.
ELECTRONIC PACKAGE AND METHOD FOR MANUFACTURING THE SAME
An electronic package includes a patterned conductive layer and at least one conductive protrusion on the patterned conductive layer. The at least one conductive protrusion has a first top surface. The patterned conductive layer and the at least one conductive protrusion define a space. The electronic package further includes a first electronic component disposed in the space and a plurality of conductive pillars on the first electronic component. The conductive pillars have a second top surface. The first top surface is substantially level with the second top surface.
SEMICONDUCTOR PACKAGE AND METHOD OF MANUFACTURING THE SAME
A semiconductor package includes a semiconductor chip including a second bonding insulating layer surrounding at least a portion of each of a first bonding pad structure and a second bonding pad structure, in which the first bonding pad structure includes a first contact portion, a first bonding pad, and a first seed layer disposed between the first bonding pad and the first contact portion and extending in a first direction, the second bonding pad structure includes a second contact portion, a second bonding pad, and a second seed layer disposed between the second bonding pad and the second contact portion and extending in the first direction, and the second bonding insulating layer is in contact with a side surface of each of the first and second seed layers and the first and second bonding pads.
Electronic circuit device and method of manufacturing electronic circuit device
An electronic circuit device according to the present invention includes a base substrate including a wiring layer having a connection part, at least one electronic circuit element, and a re-distribution layer including a photosensitive resin layer, the photosensitive resin layer enclosing a surface on which a connection part of the electronic circuit element is formed and a side surface of the electronic circuit element and embedding a first wiring photo via, a second wiring photo via and a wiring, the first wiring photo via directly connected to the connection part of the electronic circuit element, the second wiring photo via arranged at the outer periphery of the electronic circuit element and directly connected to a connection part of the wiring layer, the wiring electrically connected to the first wiring photo via and the second wiring photo via on a same surface.
Package structure and method of fabricating the same
A method of fabricating an integrated fan-out package is provided. The method includes the following steps. An integrated circuit component is provided on a substrate. An insulating encapsulation is formed on the substrate to encapsulate sidewalls of the integrated circuit component. A redistribution circuit structure is formed along a build-up direction on the integrated circuit component and the insulating encapsulation. The formation of the redistribution circuit structure includes the following steps. A dielectric layer and a plurality of conductive vias embedded in the dielectric layer are formed, wherein a lateral dimension of each of the conductive vias decreases along the build-up direction. A plurality of conductive wirings is formed on the plurality of conductive vias and the dielectric layer. An integrated fan-out package of the same is also provided.
Semiconductor device
A semiconductor device having a substrate, a semiconductor chip, and a plurality of electrode terminals is provided. The substrate has first and second principal surfaces. The semiconductor chip is disposed on the first principal surface. The electrode terminals are disposed on the second principal surface. The substrate has a via interconnection near a position at which an outer edge line of the semiconductor chip intersects an outer outline of the electrode terminal farthest from a center of the substrate, the electrode terminal farthest from the center of the substrate being among the plurality of electrode terminals overlapping the outer edge line in a predetermined condition as seen through the substrate of the semiconductor device from a direction perpendicular to the first principal surface, the via interconnection connecting a first interconnection layer on a first principal surface-side to a second interconnection layer on a second principal surface-side.