A quantum semiconductor device includes a qubit chip; an interposer chip, with a handler, including a through-silicon-via (TSV) coupled to a first side of the qubit chip. A multi-level wiring (MLW) layer contacts an underside of the interposer chip and coupling to the top side of the handler, the TSV facilitates an electrical signal connection between the MLW layer, a topside of the interposer chip and the qubit chip, wherein structure of the device mitigates signal cross-talk across respective lines of the MLW layer.

A quantum bit device according to the present invention includes a first quantum bit substrate 10 which includes a first superconductive wiring 13 disposed to have a magnetically coupled portion with a first superconductive magnetic flux quantum bit 14 on a surface thereof, a second quantum bit substrate 11 which includes a second superconductive wiring 13 disposed to have a magnetically coupled portion with a second superconductive magnetic flux quantum bit 14 on a surface thereof, and a base substrate 12 which includes a third superconductive wiring 13 configured by two superconductive wirings extending parallel to each other on a surface thereof. The first and second quantum bit substrates are placed on the base substrate, two end portions of the first superconductive wiring and two end portions on one side of the third superconductive wiring are joined via superconductive solders 15, two end portions of the second superconductive wiring and two end portions on the other side of the third superconductive wiring are joined via superconductive solders 15, and three of the first to third superconductive wirings form one continuous superconductive loop.

A quantum device (100) includes an interposer (112), a quantum chip (111) mounted on the interposer (112), and a shield part (150) provided so as to surround a quantum circuit region of the interposer (112) and the quantum chip (111). Accordingly, the quantum device (100) is able to prevent interference in the quantum circuit region due to exogenous noise.

A quantum computing (QC) chip module includes an interposer chip having a footprint. A qubit chip bump is bonded to the interposer chip and arranged so that the qubit chip extends beyond the footprint of the interposer chip. The interposer chip extends beyond an edge of the qubit chip. A wiring harness is connected to the interposer chip.

Provided is a quantum device capable of improving cooling performance. A quantum device includes a quantum chip configured to perform information processing using a quantum state, and an interposer on which the quantum chip is mounted, and the quantum chip is arranged inside a recess 31 formed in a sample stage having a cooling function, and a part of the interposer is in contact with the sample stage. The quantum chip may have a first surface mounted on the interposer and a second surface opposite to the first surface, and at least a part of the second surface may be in contact with an inner surface of the recess.

A functional chip includes a substrate including a first face and a second face, the second face of the substrate forming the front face of the functional chip; a first oxide layer on the first face of the substrate; a second oxide layer on the first oxide layer; a first routing level formed on the surface of the second oxide layer in contact with the first oxide layer; a third oxide layer on the second oxide layer wherein a semiconductor component is inserted; a rear face formed by the surface of the third oxide layer opposite the second oxide layer, the rear face including superconductor routing tracks surrounded at least partially by one or more conductor routing tracks, the semiconductor component being connected to the superconductor routing tracks via superconductor vias and the conductor routing tracks of the rear face being connected to the routing level via conductor vias.

An electronic component comprising a body and at least one terminal for soldering the body to a carrier is provided, with the terminal comprising: an electrode arranged on a surface of the body; an outgassing layer formed on and/or surrounded by the electrode, wherein the outgassing layer is configured to outgas when being heated; and an electrically conductive cover layer formed on the outgassing layer, wherein the cover layer is electrically connected to the electrode and seals the outgassing layer in a gastight manner between the cover layer and the electrode.

A functional chip includes a substrate including a first face and a second face, the second face of the substrate forming the front face of the functional chip; a first oxide layer on the first face of the substrate; a second oxide layer on the first oxide layer; a first routing level formed on the surface of the second oxide layer in contact with the first oxide layer; a third oxide layer on the second oxide layer wherein a semiconductor component is inserted; a rear face formed by the surface of the third oxide layer opposite the second oxide layer, the rear face including superconductor routing tracks surrounded at least partially by one or more conductor routing tracks, the semiconductor component being connected to the superconductor routing tracks via superconductor vias and the conductor routing tracks of the rear face being connected to the routing level via conductor vias.

An integrated structure intended to connect a plurality of semiconductor devices, the integrated structure including a substrate, a first face and a second face, the first face being intended to receive the semiconductor devices, the integrated structure including, at the first face, at least one routing level, the routing level or levels including: at least one first conductor routing track in a conductor material; and at least one first superconductor routing track made from a superconductor material.

A modular superconducting quantum processor includes a first superconducting chip including a first plurality of qubits each having substantially a first resonance frequency and a second plurality of qubits each having substantially a second resonance frequency, the first resonance frequency being different from the second resonance frequency, and a second superconducting chip including a third plurality of qubits each having substantially the first resonance frequency and a fourth plurality of qubits each having substantially the second resonance frequency. The quantum processor further includes an interposer chip connected to the first superconducting chip and to the second superconducting chip. The interposer chip has interposer coupler elements configured to couple the second plurality of qubits to the fourth plurality of qubits.