A 3D micro display, the 3D micro display including: a first level including a first single crystal layer, the first single crystal layer includes a plurality of LED driving circuits; a second level including a first plurality of light emitting diodes (LEDs), the first plurality of LEDs including a second single crystal layer, where the first level is disposed on top of the second level, where the second level includes at least ten individual first LED pixels; and a bonding structure, where the bonding structure includes oxide to oxide bonding.

A light detection element includes a semiconductor substrate, a light absorbing layer of a first conductivity type formed on the semiconductor substrate, a cap layer of a first conductivity type formed on the light absorbing layer, and a semiconductor region of a second conductivity type formed within the cap layer and forming a pn junction with the cap layer. A depletion layer formed around the semiconductor region does not reach the light absorbing layer in a case where a reverse bias is not applied to the pn junction, and exceeds a position amounting to 50% of a thickness of the light absorbing layer from the cap layer side in a case where a reverse bias of 20 V is applied to the pn junction.

A photodiode, such as a linear mode avalanche photodiode can be made free of excess noise via having a superlattice multiplication region that allows only one electrical current carrier type, such as an electron or a hole, to accumulate enough kinetic energy to impact ionize when biased, where the layers are lattice matched. A photodiode can be constructed with i) a lattice matched pair of a first semiconductor alloy and a second semiconductor alloy in a superlattice multiplication region, ii) an absorber region, and iii) a semiconductor substrate. A detector with multiple photodiodes can be made with these construction layers in order to have a cutoff wavelength varied anywhere from 1.7 to 4.9 μm as well as a noise resulting from a dark current at a level such that an electromagnetic radiation signal with the desired minimum wavelength cutoff can be accurately sensed by the photodiode.

A 3D micro display, the 3D micro display including: a first level including a first single crystal layer, the first single crystal layer includes at least one LED driving circuit; a second level including a first plurality of light emitting diodes (LEDs), the first plurality of LEDs including a second single crystal layer, where the second level is disposed on top of the first level, where the second level includes at least ten individual first LED pixels; and a bonding structure, where the bonding structure includes oxide to oxide bonding.

Various embodiments of the present disclosure are directed towards a method for manufacturing a semiconductor structure. The method includes forming photodetectors within a semiconductor substrate. A charge release layer is deposited over the semiconductor substrate. A conductive contact is formed over the charge release layer such that a contact protrusion of the conductive contact extends through the charge release layer. The charge release layer is disposed along opposing sidewalls of the conductive contact. The charge release layer is electrically coupled to ground via the conductive contact.

A 3D micro display, the 3D micro display including: a first level including a first single crystal layer, the first single crystal layer includes at least one LED driving circuit; a second level including a first plurality of light emitting diodes (LEDs), the first plurality of LEDs including a second single crystal layer, where the second level is disposed on top of the first level, where the second level includes at least ten individual first LED pixels; and a bonding structure, where the bonding structure includes oxide to oxide bonding.

A light receiving element includes a surface recombination prevention layer composed of a first compound semiconductor on which light is incident; a photoelectric conversion layer composed of a second compound semiconductor; and a compound semiconductor layer composed of a third compound semiconductor, the surface recombination prevention layer having a thickness of 30 nm or less. Also, there are provided an image capturing element including the light receiving element, and an image capturing apparatus including the image capturing element.

An imaging device according to one embodiment of the present disclosure includes a first electrode, a second electrode, and a photoelectric converter. The first electrode includes an oxide semiconductor material having an amorphous state. The second electrode is opposed to the first electrode. The photoelectric converter is provided between the first electrode and the second electrode, and includes a compound semiconductor material.

Devices, systems, and methods are provided for reducing electrical and optical crosstalk in photodiodes. A photodiode may include a first layer with passive material, the passive material having no electric field. The photodiode may include a second layer with an absorbing material, the second layer above the first layer. The photodiode may include a diffused region with a buried p-n junction. The photodiode may include an active region with the buried p-n junction and having an electric field greater than zero. The photodiode may include a plateau structure based on etching through the second layer to the first layer, the etching performed at a distance of fifteen microns or less from the buried p-n junction.

An apparatus and method for a detector are disclosed. The apparatus disclosed contains a non-absorbing layer shaped as one or more pyramids, one or more collector regions, an absorber layer disposed between the one or more collector regions and the non-absorbing layer, a first electrical contact, and a second electrical contact, wherein the absorber layer is configured to absorb photons of incident light and generate minority electrical carriers and majority electrical carriers, wherein the one or more collector regions are electrically connected with the absorber layer and with the first electrical contact for extracting the minority electrical carriers, and the absorber layer is electrically connected with the one or more collector regions and with the second electrical contact to extract the majority electrical carriers.