A sensor including a layer of amorphous selenium (a-Se) and at least one charge blocking layer is formed by depositing the charge blocking layer over a substrate prior to depositing the amorphous selenium, enabling the charge blocking layer to be formed at elevated temperatures. Such a process is not limited by the crystallization temperature of a-Se, resulting in the formation of an efficient charge blocking layer, which enables improved signal amplification of the resulting device. The sensor can fabricated by forming first and second amorphous selenium layers over separate substrates, and then fusing the a-Se layers at a relatively low temperature.

Disclosed herein is an apparatus and a method of making the apparatus. The method comprises obtaining a plurality of semiconductor single crystal chunks. Each of the plurality of semiconductor single crystal chunks may have a first surface and a second surface. The second surface may be opposite to the first surface. The method may further comprise bonding the plurality of semiconductor single crystal chunks by respective first surfaces to a first semiconductor wafer. The plurality of semiconductor single crystal chunks forming a radiation absorption layer. The method may further comprise forming a plurality of electrodes on respective second surfaces of each of the plurality of semiconductor single crystal chunks, depositing pillars on each of the plurality of semiconductor single crystal chunks and bonding the plurality of semiconductor single crystal chunks to a second semiconductor wafer by the pillars.

A sensor including a layer of amorphous selenium (a-Se) and at least one charge blocking layer is formed by depositing the charge blocking layer over a substrate prior to depositing the amorphous selenium, enabling the charge blocking layer to be formed at elevated temperatures. Such a process is not limited by the crystallization temperature of a-Se, resulting in the formation of an efficient charge blocking layer, which enables improved signal amplification of the resulting device. The sensor can be fabricated by forming first and second amorphous selenium layers over separate substrates, and then fusing the a-Se layers at a relatively low temperature.

Provided is a field shaping multi-well detector and method of fabrication thereof. The detector is configured by depositing a pixel electrode on a substrate, depositing a first dielectric layer, depositing a first conductive grid electrode layer on the first dielectric layer, depositing a second dielectric layer on the first conductive grid electrode layer, depositing a second conductive grid electrode layer on the second dielectric layer, depositing a third dielectric layer on the second conductive grid electrode layer, depositing an etch mask on the third dielectric layer. Two pillars are formed by etching the third dielectric layer, the second conductive grid electrode layer, the second dielectric layer, the first conductive grid electrode layer, and the first dielectric layer. A well between the two pillars is formed by etching to the pixel electrode, without etching the pixel electrode, and the well is filled with a-Se.

A sensor including a layer of amorphous selenium (a-Se) and at least one charge blocking layer is formed by depositing the charge blocking layer over a substrate prior to depositing the amorphous selenium, enabling the charge blocking layer to be formed at elevated temperatures. Such a process is not limited by the crystallization temperature of a-Se, resulting in the formation of an efficient charge blocking layer, which enables improved signal amplification of the resulting device. The sensor can be fabricated by forming first and second amorphous selenium layers over separate substrates, and then fusing the a-Se layers at a relatively low temperature.

An edge-on photon-counting detector includes at least one detector module having a respective edge facing incident X-rays. The at least one detector module includes a semiconductor substrate. The edge-on photon-counting detector also includes a plurality of active integrated pixels arranged in the semiconductor substrate.

Provided is a field shaping multi-well detector and method of fabrication thereof. The detector is configured by depositing a pixel electrode on a substrate, depositing a first dielectric layer, depositing a first conductive grid electrode layer on the first dielectric layer, depositing a second dielectric layer on the first conductive grid electrode layer, depositing a second conductive grid electrode layer on the second dielectric layer, depositing a third dielectric layer on the second conductive grid electrode layer, depositing an etch mask on the third dielectric layer. Two pillars are formed by etching the third dielectric layer, the second conductive grid electrode layer, the second dielectric layer, the first conductive grid electrode layer, and the first dielectric layer. A well between the two pillars is formed by etching to the pixel electrode, without etching the pixel electrode, and the well is filled with a-Se.

Disclosed herein are a radiation detector and a method of making it. The radiation detector is configured to absorb radiation particles incident on a semiconductor single crystal of the radiation detector and to generate charge carriers.. The semiconductor single crystal may be a CdZnTe single crystal or a CdTe single crystal. The method may comprise forming a recess into a substrate of semiconductor; forming a semiconductor single crystal in the recess; and forming a heavily doped semiconductor region in the substrate. The semiconductor single crystal has a different composition from the substrate. The heavily doped region is in electrical contact with the semiconductor single crystal and embedded in a portion of intrinsic semiconductor of the substrate.

A thin film radiation detection device includes a photosensitive p-n diode, a thin film transistor (TFT), a radiation detection layer, and a substrate. The photosensitive p-n diode and the TFT are formed on the substrate. The radiation detection layer is formed above the substrate and receives multiple radiations. The photosensitive p-n diode receives a conversion output signal from the radiation detection layer and generates a detector signal. The TFT generates an amplified signal based on the detector signal.

A direct bonding method for infrared focal plane arrays, includes steps of depositing a thin adhesion layer on infrared radiation detecting material, removing a portion of the thin adhesion layer with a chemical-mechanical polishing process, forming a bonding layer at a bonding interface, and bonding the infrared radiation detecting material to a silicon wafer with the thin adhesion layer as a bonding layer. The thin adhesion layer may include SiO.sub.x, where x ranges between 1.0 and 2.0. The thickness of the thin adhesion layer to form the bonding layer is 500 angstrom or less.