Group-III nitride (III-N) tunnel devices with a device structure including multiple quantum wells. A bias voltage applied across first device terminals may align the band structure to permit carrier tunneling between a first carrier gas residing in a first of the wells to a second carrier gas residing in a second of the wells. A III-N tunnel device may be operable as a diode, or further include a gate electrode. The III-N tunnel device may display a non-linear current-voltage response with negative differential resistance, and be employed as a frequency mixer operable in the GHz and THz bands. In some examples, a GHz-THz input RF signal and local oscillator signal are coupled into a gate electrode of a III-N tunnel device biased within a non-linear regime to generate an output RF signal indicative of a frequency difference between the RF signal and a local oscillator signal.

A terahertz element of an aspect of the present disclosure includes a semiconductor substrate, first and second conductive layers, and an active element. The first and second conductive layers are on the substrate and mutually insulated. The active element is on the substrate and electrically connected to the first and second conductive layers. The first conductive layer includes a first antenna part extending along a first direction, a first capacitor part offset from the active element in a second direction as viewed in a thickness direction of the substrate, and a first conductive part connected to the first capacitor part. The second direction is perpendicular to the thickness direction and first direction. The second conductive layer includes a second capacitor part, stacked over and insulated from the first capacitor part. The substrate includes a part exposed from the first and second capacitor parts. The first conductive part has a portion spaced apart from the first antenna part in the second direction with the exposed part therebetween as viewed in the thickness direction.

Described herein are methods for using remote plasma chemical vapor deposition (RP-CVD) and sputtering deposition to grow layers for light emitting devices. A method includes growing a light emitting device structure on a growth substrate, and growing a tunnel junction on the light emitting device structure using at least one of RP-CVD and sputtering deposition. The tunnel junction includes a p++ layer in direct contact with a p-type region, where the p++ layer is grown by using at least one of RP-CVD and sputtering deposition. Another method for growing a device includes growing a p-type region over a growth substrate using at least one of RP-CVD and sputtering deposition, and growing further layers over the p-type region. Another method for growing a device includes growing a light emitting region and an n-type region using at least one of RP-CVD and sputtering deposition over a p-type region.

Described herein are methods for using remote plasma chemical vapor deposition (RP-CVD) and sputtering deposition to grow layers for light emitting devices. A method includes growing a light emitting device structure on a growth substrate, and growing a tunnel junction on the light emitting device structure using at least one of RP-CVD and sputtering deposition. The tunnel junction includes a p++ layer in direct contact with a p-type region, where the p++ layer is grown by using at least one of RP-CVD and sputtering deposition. Another method for growing a device includes growing a p-type region over a growth substrate using at least one of RP-CVD and sputtering deposition, and growing further layers over the p-type region. Another method for growing a device includes growing a light emitting region and an n-type region using at least one of RP-CVD and sputtering deposition over a p-type region.

A terahertz device includes a terahertz element, a sealing resin, a wiring layer and a frame-shaped member. The terahertz element that performs conversion between terahertz waves and electric energy. The terahertz element has an element front surface and an element back surface spaced apart from each other in a first direction. The sealing resin covers the terahertz element. The wiring layer is electrically connected to the terahertz element. A frame-shaped member is made of a conductive material and arranged around the terahertz element as viewed in the first direction. The frame-shaped member has a reflective surface capable of reflecting the terahertz waves.

According to one aspect of the present disclosure, a terahertz device is provided. The terahertz device includes a semiconductor substrate, a terahertz element, and a first rectifying element. The terahertz element is disposed on the semiconductor substrate. The first rectifying element is electrically connected to the terahertz element in parallel.

The task of the present invention is to achieve gain enhancement.

A terahertz device (10) of the present invention includes a terahertz element (20) generating an electromagnetic wave, a dielectric (50) including a dielectric material and surrounding the terahertz element (20), a gas space (92) including a gas, and a reflecting film (82) serving as a reflecting portion. The reflecting film (82) includes a portion opposing the terahertz element (20) through the dielectric (50) and the gas space (92) and reflecting the electromagnetic wave toward a direction, wherein the electromagnetic wave is generated from the terahertz element (20) and transmitted through the dielectric (50) and the gas space (92). In addition, the refractive index of the dielectric (50) is lower than the refractive index of the terahertz element (20) and is higher than the refractive index of the gas in the gas space (92).

An object of the present invention is to provide a terahertz oscillator that does not have an MIM capacitor structure of which producing is intricacy, and oscillates due to resonance of an RTD and stabilizing resistors. The present invention is a terahertz oscillator, wherein a slot antenna having a slot is formed between a first electrode plate and a second electrode plate which are applied a bias voltage, stabilizing resistors to respectively connect to the first electrode plate and the second electrode plate are provided in the slot, an RTD is provided on the second electrode plate through a mesa, and a conductive material member to form an air bridge between the first electrode plate and the mesa is provided, and wherein an oscillation in a terahertz frequency band is obtained due to a resonance of the RTD and the stabilizing resistors.

A resonant tunneling device includes a first two-dimensional semiconductor layer including a first two-dimensional semiconductor material, a first insulating layer on the first two-dimensional semiconductor layer; and a second two-dimensional semiconductor layer on the first insulating layer and including a second two-dimensional semiconductor material of a same kind as the first two-dimensional semiconductor material.

Energy-filtered cold electron devices use electron energy littering through discrete energy levels of quantum wells or quantum dots that are formed through band bending of tunneling barrier conduction band. These devices can obtain low effective electron temperatures of less than or equal to 45K at room temperature, steep electrical current turn-on/turn-off capabilities with a steepness of less than or equal to 10 mV/decade at room temperature, subthreshold swings of less than or equal to 10 mV/decade at room temperature, and/or supply voltages of less than or equal to 0.1 V.