A first photoelectric converter according to an embodiment of the present disclosure includes: a light absorbing layer having a light incidence surface and including a compound semiconductor material; a first electrode that is provided for each of pixels to be opposed to a surface of the light absorbing layer opposite to the light incidence surface; a first semiconductor layer of a first electrical conduction type; a second semiconductor layer of a second electrical conduction type; a diffusion region of the second electrical conduction type; a groove that separates the first semiconductor layer, the second semiconductor layer, and a portion of the light absorbing layer between the adjacent pixels; a first insulating film that is continuously provided on a side wall and a bottom surface of the groove; and a light shielding film that is continuously provided from a side wall of the first semiconductor layer to a side wall of the light absorbing layer with the first insulating film interposed in between. The first semiconductor layer is provided between the light absorbing layer and the first electrode. The second semiconductor layer is provided between the first semiconductor layer and the light absorbing layer. The diffusion region is provided between the adjacent pixels across the second semiconductor layer and the light absorbing layer.

An occupancy sensor covering a wide field in an integrated chip is disclosed. The occupancy sensor includes an array of grating coupled waveguide sensors wherein continuous wave (cw) signals monitor an ambient light field for dynamic changes on times scales of seconds, and high frequency signals map in three-dimensions of the space using time-of-flight (TOF) measurements, pixel level electronics that perform signal processing; array level electronics that perform additional signal processing; and communications and site level electronics that interface with actuators to respond to occupancy sensing.

A dark reference device comprises: a photodiode comprising an optical active area; a light shield configured to prevent light from entering said optical active area, wherein said light shield comprises first and second overlapping metal covers, and wherein each of said metal covers comprises a plurality of openings overlapping said optical active area.

Light detection devices and related methods are provided. The devices may comprise a reaction structure for containing a reaction solution with a relatively high or low pH and a plurality of reaction sites that generate light emissions. The devices may comprise a device base comprising a plurality of light sensors, device circuitry coupled to the light sensors, and a plurality of light guides that block excitation light but permit the light emissions to pass to a light sensor. The device base may also include a shield layer extending about each light guide between each light guide and the device circuitry, and a protection layer that is chemically inert with respect to the reaction solution extending about each light guide between each light guide and the shield layer. The protection layer prevents reaction solution that passes through the reaction structure and the light guide from interacting with the device circuitry.

The present disclosure provides an optical sensor, an optical distance sensing module and a fabricating method thereof. According to the embodiments of the present disclosure, the optical sensor includes an optical sensing layer, a light transmitting layer and a light blocking layer. The optical sensing layer includes an array of optical sensing elements, the light transmitting layer is coated on the optical sensing layer, and the light blocking layer includes one or more light incident holes and is coated on the light transmitting layer. The optical sensing layer, the light transmitting layer and the light blocking layer are packaged as a wafer die. Light passes through the light incident holes and transmits through the light transmitting layer to irradiate on the array of optical sensing elements. The optical sensor effectively reduces the thickness, size and weight of the optical sensor, thereby expanding the application range of the optical sensor.

A semiconductor device is provided. The semiconductor device includes a substrate and a light-collimating layer. The substrate has a plurality of pixels. The light-collimating layer is disposed on the substrate, and the light-collimating layer includes a transparent material layer, a first light-shielding layer, a second light-shielding layer and a plurality of transparent pillars. The transparent material layer covers the pixels. The first light-shielding layer is disposed on the substrate and the first light-shielding layer has a plurality of holes corresponding to the pixels. The second light-shielding layer is disposed on the first light-shielding layer. The transparent pillars are disposed in the second light-shielding layer.

According to an aspect, a detection device includes: a substrate; photoelectric conversion elements arranged on the substrate; transistors that each include a semiconductor layer and a gate electrode facing the semiconductor layer and are provided for each photoelectric conversion element; and a first electrode and a second electrode that are provided between the substrate and the photoelectric conversion elements in a direction orthogonal to the substrate and face each other with an insulating film interposed therebetween. The first electrode includes main parts that overlap the respective photoelectric conversion elements and a coupling part couples together adjacent main parts of the main parts. The second electrode is formed to have an island pattern for each photoelectric conversion element. The first electrode is located in the same layer as that of the gate electrode. The second electrode is located in the same layer as that of the semiconductor layer.

In an embodiment a photodiode includes a semiconductor body having a light entrance side and a back side opposite the light entrance side, a first electrode at the light entrance side atop a first doped area of a first conductivity type, a second electrode at the light entrance side atop a second doped area of a second conductivity type, the second doped area being configured to absorb radiation, a gate region at the light entrance side at least between the first electrode and the second electrode, the gate region being connected to a gate electrode, a base electrode at the semiconductor body, the base electrode being configured to receive a current flow from the first electrode, the current flow being indicative of a radiant flux of the radiation onto the second doped area and a radiation shield covering and shielding the first doped area from the radiation to be detected.

Provided herein are improvements to dye-sensitized photovoltaic cells that enhance the ability of those cells to operate in normal room lighting conditions. These improvements include printable, non-corrosive, nonporous hole blocking layer formulations that improve the performance of dye-sensitized photovoltaic cells under 1 sun and indoor light irradiation conditions. Also provided herein are highly stable electrolyte formulations for use in dye-sensitized photovoltaic cells. These electrolytes use high boiling solvents, and provide unexpectedly superior results compared to prior art acetonitrile-based electrolytes. Also provided herein are chemically polymerizable formulations for depositing thin composite catalytic layers for redox electrolyte-based dye-sensitized photovoltaic cells. The formulations allow R2R printing (involves coating, fast chemical polymerization, rinsing of catalytic materials with methanol) composite catalyst layers on the cathode. In situ chemical polymerization process forms very uniform thin films, which is essential for achieving uniform performance from every cell in serially connected photovoltaic module.

An image sensor package includes a substrate, an image sensor, a plurality of light-emitting elements, and a scattering layer. The substrate includes a plurality of first conductive contacts, a plurality of second conductive contacts, and a plurality of third conductive contacts, wherein the second conductive contacts and the third conductive contacts are electrically connected with the corresponding first conductive contacts. The image sensor is disposed on the substrate and electrically connected to the second conductive contacts. The light-emitting elements are disposed on the substrate and electrically connected with the third conductive contacts. The scattering layer covers at least one sidewall of the light-emitting elements. The abovementioned image sensor package can provide better illumination effects. An endoscope including the abovementioned image sensor package is also disclosed.