A light pixel projection module includes a pixel light source, a light pixel projection assembly for projecting a light pixel generated by the light pixel generating assembly, and an optical time-of-flight (ToF) measurement assembly for measuring a distance between the projection module and an external object. The ToF measurement assembly includes a ToF light source, a beam splitting optical device for splitting an incident light beam into a reflected main beam component and a transmitted and attenuated secondary beam component, and an APD-based ToF photodetector for light detection. The beam splitting optical device is arranged in the optical path of light beams emitted by the ToF light source such that it splits each light beam emitted by the ToF light source into a main beam component leaving the module and heading towards the external object and a secondary beam component remaining within the module and hitting the ToF photodetector.

A wafer includes a substrate layer, a first mirror layer having a plurality of two-dimensionally arranged first mirror portions, and a second mirror layer having a plurality of two-dimensionally arranged second mirror portions. In the wafer, a gap is formed between the first mirror portion and the second mirror portion so as to form a plurality of Fabry-Perot interference filter portions. A wafer inspection method according to an embodiment includes a step of performing faulty/non-faulty determination of each of the plurality of Fabry-Perot interference filter portions, and a step of applying ink to at least part of a portion overlapping the gap when viewed in a facing direction on the second mirror layer of the Fabry-Perot interference filter portion determined as faulty.

In an embodiment an optoelectronic apparatus includes a light detector having a bottom side, an upper side and at least one sidewall that extends between the upper side and the bottom side, a carrier having an upper surface on which the light detector is arranged such that the bottom side faces the carrier, at least one outer wall which is arranged on the surface of the carrier, the outer wall and the carrier forming a cavity with an opening in which the light detector resides, a filter covering the upper side of the light detector, the filter having a first threshold wavelength separating a first wavelength region from an adjacent second wavelength region, wherein the filter has a lower transmittance for light at wavelengths in the first wavelength region than for light at wavelengths in the second wavelength region and a first material layer covering the filter.

Disclosed is a package structure and a method for manufacturing the same. The package structure comprises: a lead frame; a first light sensor being electrically coupled to the lead frame; a light emitter separated from the first light sensor and being electrically coupled to the lead frame; a first plastic body in which a trench is formed; and a photoresist layer located on a side surface of the first plastic body, wherein the first plastic body is separated by the trench into a first portion covering the light emitter and a second portion covering the first light sensor, the first portion of the first plastic body has the side surface facing the first light sensor. The photoresist layer prevents the light with a specific wavelength from passing through and avoids the influence to the normal operation of the light sensor, so that the anti-interference capacity of the light sensor is ensured and the size of package structure is reduced while the light sensor is integrated.

Embodiments of the present disclosure are directed to optical packages having a package body that includes a light protection coating on at least one surface of a transparent material. The light protection coating includes one or more openings to allow light to be transmitted to the optical device within the package body. In one embodiment, the light protection coating and the openings allow substantially perpendicular radiation to be directed to the optical device within the package body. In one exemplary embodiment the light protection coating is located on an outer surface of the transparent material. In another embodiment, the light protection coating is located on an inner surface of the transparent material inside of the package body.

A color filter array and an image sensing device are disclosed. The color filter array includes a plurality of color cells arranged into a matrix. Each color cell has an intermediate region and a peripheral region. The peripheral region is configured around the intermediate region. The intermediate region forms a color filter object. Parts of the peripheral region form transparent objects. The transparent objects extend to edge parts of the color cells from an edge of the intermediate region. The remaining peripheral regions form the color filter objects. The color filter object is a high-refractive index material. The transparent object is a low-refractive index material. Therefore, in each color cell, the color filter objects configured in the intermediate region and the peripheral region reduce the spectral crosstalk, and the transparent objects configured in the peripheral region reduce the optical crosstalk, thereby enhancing the image quality sensed by sensor chips.

A photodetector comprises a semiconductor substrate having an input surface for receiving illumination, control electrodes for control of photogenerated charge within the substrate and a filter on the radiation input surface of the substrate, the filter comprising a dielectric-metal band pass filter having a metal layer and one or more dielectric layers with one dielectric layer between the substrate surface and the metal layer. A connector is provided for applying a bias voltage to the metal layer with respect to the substrate. In effect, the metal layer of the band pass filter provides two functions. The first function is as part of the ITF filter selecting the wavelength desired for the device. The second function is as a conductive layer allowing a bias to be provided between the substrate and the metal layer thereby producing a field within the surface of the substrate to which the filter is applied.

A device for detecting electromagnetic radiation includes at least one thermal detector, placed on a substrate; an encapsulating structure forming a cavity housing the thermal detector, including at least one thin encapsulating layer; and at least one Fabry-Perot interference filter, formed by first and second semi-reflective mirrors that are separated from each other by a structured layer. A high-index layer of one of the semi-reflective mirrors is at least partially formed from the thin encapsulating layer.

A semiconductor device includes first and second photo-electric conversion elements, each having a light-receiving surface, disposed adjacent to each other, each outputting a light current that is a current corresponding to an intensity of received light, a first filter disposed on the light-receiving surface of the first photo-electric conversion element, a second filter disposed on the light-receiving surface of the second photo-electric conversion element, and a third filter disposed on the light-receiving surface of the second photo-electric conversion element and being in contact with the second filter, one end of the second filter and one end of the third filter overlapping one end of the first filter at a vicinity of a boundary between the first photo-electric conversion element and the second photo-electric conversion element.

Provided are an optical receiver that can realize a reduction in the variation of sensitivity in the ultraviolet light region and a reduction in noise in the visible light region and the infrared light region, a portable electronic device, and a method of producing an optical receiver. The first light-receiving device (PD1) and the second light-receiving device (PD2) of the optical receiver (1) are each constituted by forming a second conductivity-type N-type well layer (N_well) on a first conductivity-type P-type substrate (P_sub), forming a first conductivity-type P-type well layer (P_well) in the N-type well layer (N_well), and forming a second conductivity-type N-type diffusion layer (N) in the P-type well layer (P_well). The P-type substrate P_sub, the N-type well layer (N_well), and the P-type well layer (P_well) are electrically at the same potential or are short-circuited.