A photoelectric conversion element includes a semiconductor, an intrinsic layer disposed on the semiconductor and containing hydrogenated amorphous silicon, a first-conductivity-type layer that covers a part of the intrinsic layer and contains hydrogenated amorphous silicon of a first conductivity type, a second-conductivity-type layer that covers a part of the intrinsic layer and contains hydrogenated amorphous silicon of a second conductivity type, an insulating film covering an end region of the first-conductivity-type layer, a first electrode disposed on the first-conductivity-type layer, and a second electrode disposed on the second-conductivity-type layer. An end portion of the second-conductivity-type layer is located on the insulating film or above the insulating film.

A back contact solar cell is described which includes a semiconductor light absorbing layer; a first-level metal layer (M1), the M1 metal layer on a back side of the light absorbing layer, the back side being opposite from a front side of the light absorbing layer designed to receive incident light; an electrically insulating backplane sheet backside of said solar cell with the M1 layer, the backplane sheet comprising a plurality of via holes that expose portions of the M1 layer beneath the backplane sheet; and an M2 layer in contact with the backplane sheet, the M2 layer made of a sheet of pre-fabricated metal foil material comprising a thickness of between 5-250 μm, the M2 layer electrically connected to the M1 layer through the via holes in the backplane sheet.

A solar cell module and a method for manufacturing the same are disclosed. The solar cell module includes a first solar cell and a second solar cell each including a plurality of first electrodes formed on a back surface of a semiconductor substrate, a plurality of second electrodes which are formed in parallel with the plurality of first electrodes on the back surface of the semiconductor substrate, a first auxiliary electrode connected to the plurality of first electrodes, and a second auxiliary electrode connected to the plurality of second electrodes, and an interconnector for electrically connecting the first auxiliary electrode of the first solar cell to the second auxiliary electrode of the second solar cell.

A solar cell is discussed. The solar cell according to an embodiment includes a photoelectric conversion unit including a first conductive type region and a second conductive type region formed on the same side of the photoelectric conversion unit; and an electrode formed on the photoelectric conversion unit and including an adhesive layer formed on the photoelectric conversion unit and an electrode layer formed on the adhesive layer, wherein the adhesive layer has a coefficient of thermal expansion that is greater than a coefficient of thermal expansion of the photoelectric conversion unit and is less than a coefficient of thermal expansion of the electrode layer.

A solar cell is provided, including a substrate, a doped emitter layer, a composite anti-reflective layer, a first electrode, a second electrode, a third electrode and a rear electric field layer, the substrate has a first surface and a second surface opposite to the first surface, the first surface is a light incident surface, the doped emitter layer includes a plurality of convexities disposed on the first surface, the composite anti-reflective layer is formed by combination of a plurality of membranous layers and disposed on the doped emitter layer, the first electrode is disposed on a side of the first surface, the second electrode and the third electrode are disposed on a side of the second surface, the second electrode is a bus electrode, the third electrode is a rear electrode, the rear electric field layer is disposed on the second surface and coupled electrically with the third electrode.

A method for thermal exfoliation includes providing a target layer on a substrate to form a structure. A stressor layer is deposited on the target layer. The structure is placed in a temperature controlled environment to induce differential thermal expansion between the target layer and the substrate. The target layer is exfoliated from the substrate when a critical temperature is achieved such that the target layer is separated from the substrate to produce a standalone, thin film device.

Paste compositions, methods of making a paste composition, photovoltaic cells, and methods of making a photovoltaic cell contact are disclosed. The paste composition can include a conductive metal component such as aluminum, phosphate glass, phosphorus compounds such as alky! phosphate, and a vehicle. The contact can be formed on a passivation layer on a silicon wafer by applying the paste on the passivation layer and firing the paste. During firing, the metal component can fire through the passivation layer, thereby electrically contacting the silicon substrate.

In general, the invention relates to a paste comprising:

i) silver particles;
ii) a particulate lead-silicate glass comprising iia) at least one oxide of silicon; iib) at least one oxide of lead; iic) at least one chloride; iid) optionally at least one further oxide being different from components iia) and iib);
iii) an organic vehicle.

The invention also relates to a solar cell precursor, to a process for the preparation of a solar cell, to a solar cell obtainable by this process, to a module comprising such a solar cell and to the use of a particulate lead-silicate glass as a component in a silver paste that can be used for the formation of an electrode.

Methods of fabricating solar cell emitter regions with differentiated P-type and N-type regions architectures, and resulting solar cells, are described. In an example, a back contact solar cell can include a substrate having a light-receiving surface and a back surface. A first polycrystalline silicon emitter region of a first conductivity type is disposed on a first thin dielectric layer disposed on the back surface of the substrate. A second polycrystalline silicon emitter region of a second, different, conductivity type is disposed on a second thin dielectric layer disposed on the back surface of the substrate. A third thin dielectric layer is disposed over an exposed outer portion of the first polycrystalline silicon emitter region and is disposed laterally directly between the first and second polycrystalline silicon emitter regions. A first conductive contact structure is disposed on the first polycrystalline silicon emitter region. A second conductive contact structure is disposed on the second polycrystalline silicon emitter region. Metallization methods, include etching techniques for forming a first and second conductive contact structure are also described.

Voltage breakdown devices for solar cells are described. For example, a solar cell includes a semiconductor substrate. A plurality of alternating N-type and P-type semiconductor regions is disposed in or above the substrate. A plurality of conductive contacts is coupled to the plurality of alternating N-type and P-type semiconductor regions. A voltage breakdown device is disposed above the substrate. The voltage breakdown device includes one of the plurality of conductive contacts in electrical contact with one of the N-type semiconductor regions and with one of the P-type semiconductor regions of the plurality of alternating N-type and P-type semiconductor regions disposed in or above the substrate.