Approaches for fabricating wire-based metallization for solar cells, and the resulting solar cells, are described. In an example, a solar cell includes a substrate having a back surface and an opposing light-receiving surface. A plurality of alternating N-type and P-type semiconductor regions is disposed in or above the back surface of the substrate. A conductive contact structure is disposed on the plurality of alternating N-type and P-type semiconductor regions. The conductive contact structure includes a plurality of metal wires. Each metal wire of the plurality of metal wires is parallel along a first direction to form a one-dimensional layout of a metallization layer for the solar cell.

Methods of fabricating solar cell emitter regions with differentiated P-type and N-type regions architectures, and resulting solar cells, are described. In an example, a back contact solar cell includes a substrate having a light-receiving surface and a back surface. A first polycrystalline silicon emitter region of a first conductivity type is disposed on a first thin dielectric layer disposed on the back surface of the substrate. A second polycrystalline silicon emitter region of a second, different, conductivity type is disposed on a second thin dielectric layer disposed on the back surface of the substrate. A third thin dielectric layer is disposed laterally directly between the first and second polycrystalline silicon emitter regions. A first conductive contact structure is disposed on the first polycrystalline silicon emitter region. A second conductive contact structure is disposed on the second polycrystalline silicon emitter region.

The disclosure provides an electrode structure of a back contact cell, a back contact cell, a back contact cell module, and a back contact cell system. The electrode structure includes: first fingers, configured to collect a first polarity region; second fingers, configured to collect a second polarity region; a first busbar, disposed on a side of the back contact cell close to a first edge and connected to the first fingers; first pad points; and first connection electrodes, respectively connected to the first busbar and the first pad points. A distance between each of the first pad points and the first edge is greater than a distance between the first busbar and the first edge. The electrode structure can improve the reliability, reduce the costs, increase the product yield, and ensure excellent photoelectric conversion efficiency.

The present disclosure provides a thin-film photovoltaic cell with a high photoelectric conversion rate and a preparation process thereof. The thin-film photovoltaic cell comprises a transparent substrate and photovoltaic units which are disposed on the transparent substrate and arranged toward the display module, and the photovoltaic unit disposed in the display area comprises a transparent front electrode disposed on the transparent substrate, a light absorption layer disposed on the transparent front electrode and a transparent back electrode disposed on the light absorption layer; and the photovoltaic unit disposed in the non-display area comprises a transparent front electrode disposed on the transparent substrate, a light absorption layer disposed on the transparent front electrode and a metal back electrode disposed on the light absorption layer.

A photovoltaic device including: a first amorphous semiconductor layer (3) and a second amorphous semiconductor layer (4) both on a back face of a semiconductor substrate (1); electrodes (5, 6); and a wiring board (8). The electrodes (5, 6) are disposed on the first amorphous semiconductor layer (3) and the second amorphous semiconductor layer (4) respectively. The wiring board (8) has wires (82) connected to the electrodes (5) by a conductive adhesive layer (7). The wiring board (8) has wires (83) connected to the electrodes (5) by the conductive adhesive layer (7). The electrodes (5) include conductive layers (51, 52). The electrodes (6) include conductive layers (61, 62). The conductive layers (51, 61) are composed primarily of silver. The conductive layers (52, 62) cover the conductive layers (51, 52) respectively. Each conductive layer (52, 62) is composed of a metal more likely to be oxidized than silver.

Discussed is a solar cell including a semiconductor substrate, a conductive region disposed in the semiconductor substrate or over the semiconductor substrate, and an electrode electrically connected to the conductive region. The electrode includes a first electrode part and a second electrode part disposed over the first electrode part. The second electrode part includes a particle connection layer formed by connecting a plurality of particles including a first metal and a cover layer including a second metal different from the first metal and covering at least the outside surface of the particle connection layer.

Discussed is a solar cell including a semiconductor substrate having an inclined part; first and second conductivity type regions formed at or on one surface of the semiconductor substrate; a first electrode connected to the first conductivity type region on the one surface of the semiconductor substrate; and a second electrode connected to the second conductivity type region on the one surface of the semiconductor substrate. At least one of the first and second electrodes includes a finger part including a plurality of inner finger parts extending in a first direction, and a plurality of outer finger parts extending in the first direction adjacent to an edge of the semiconductor substrate; and a connection part connecting at least some of the plurality of outer finger parts on one side of the semiconductor substrate adjacent to the inclined part.

A high efficiency configuration for a solar cell module comprises solar cells conductively bonded to each other in a shingled manner to form super cells, which may be arranged to efficiently use the area of the solar module, reduce series resistance, and increase module efficiency.

A solar cell comprising a semiconductor substrate, first semiconductor layers, second semiconductor layers, a band-like first base electrode stacked on the first semiconductor layer, a band-like second base electrode stacked on the second semiconductor layer, a first electrode insulation stacked on the first base electrodes, a second electrode insulation stacked on the second base electrodes, an intermediate insulation stacked on a region of the first semiconductor layer in which the first base electrode is not stacked, and a region of the second semiconductor layer in which the second base electrode is not stacked, a first current collector stacked to span the second electrode insulation and the intermediate insulation, and a second current collector stacked to span the first electrode insulation and the intermediate insulation.

A special-figure design ribbon for connecting back contact cells includes a body, a plurality of first solder joints, and a plurality of second solder joints. The plurality of first solder joints and the plurality of second solder joints are respectively located on two sides of the body in a width direction. Each of the first solder joints stretches outward from a first side of the body. Each of the second solder joints stretches outward from a second side of the body. A shape of each first solder joint is different from a shape of each second solder joint. Center lines of at least one set of the first solder joint and the second solder joint adjacent to each other are staggered from each other in the width direction of the body.