This invention describes a Quantum NPS Photodetector (QNPSPD). A plurality of dispersed patterned Nanoporous Silicon island regions with sub 50 nm pore nc-pSi nanostructure are formed in a high resistivity Si substrate on the first side of a front illuminated QNPSPD device with each nc-pSi region surrounded along its perimeter by a contiguous interconnected p/n diode junction. The Quantum NPS Photodetector is characterized by enhanced responsivity in the spectral range of from about 0.2 um to about 1.1 um, low noise, and fast response time, and it can operate from 10 mV to about 180V. The QNPSPD photodetector can provide excellent imaging in the UV-VIS-NIR spectral range that is important for many applications including defense, homeland security, medical imaging, and night vision. The QNPSPD manufacturing method described is adaptable for low cost manufacturing and scalable to large size wafer diameters. Various embodiments of the Quantum NPS Photodetector and methods for its manufacturing are disclosed.

Voltage breakdown devices for solar cells are described. For example, a solar cell includes a semiconductor substrate. A plurality of alternating N-type and P-type semiconductor regions is disposed in or above the substrate. A plurality of conductive contacts is coupled to the plurality of alternating N-type and P-type semiconductor regions. A voltage breakdown device is disposed above the substrate. The voltage breakdown device includes one of the plurality of conductive contacts in electrical contact with one of the N-type semiconductor regions and with one of the P-type semiconductor regions of the plurality of alternating N-type and P-type semiconductor regions disposed in or above the substrate.

A solar cell wafer is provided. It is a silicon wafer, and a surface of the silicon wafer has a plurality of pores, wherein based on a total amount of 100% of the plurality of pores, 60% or more of the pores has a circularity greater than 0.5. Therefore, the reflectance of the solar cell wafer can be efficiently reduced.

An image sensor with high quantum efficiency is provided. In some embodiments, a semiconductor substrate includes a non-porous semiconductor layer along a front side of the semiconductor substrate. A periodic structure is along a back side of the semiconductor substrate. A high absorption layer lines the periodic structure on the back side of the semiconductor substrate. The high absorption layer is a semiconductor material with an energy bandgap less than that of the non-porous semiconductor layer. A photodetector is in the semiconductor substrate and the high absorption layer. A method for manufacturing the image sensor is also provided.

In one aspect, nanostructured films are described herein comprising controlled architectures on multiple length scales (e.g. 3). As described further herein, the ability to control film properties on multiple length scales enables tailoring structures of the films to specific applications including, but not limited to, optoelectronic, catalytic and photoelectrochemical cell applications. In some embodiments, a nanostructured film comprises a porous inorganic scaffold comprising particles of an electrically insulating inorganic oxide. An electrically conductive metal oxide coating is adhered to the porous inorganic scaffold, wherein the conductive metal oxide coating binds adjacent particles of the insulating inorganic oxide.

The disclosure relates to the technical field of solar cells, and provides a solar cell and a doped region structure thereof, a cell assembly, and a photovoltaic system. The doped region structure includes a first doped layer, a passivation layer, and a second doped layer that are disposed on a silicon substrate in sequence. The passivation layer is a porous structure having the first doped layer and/or the second doped layer inlaid in a hole region. The first doped layer and the second doped layer have a same doping polarity. By means of the doped region structure of the solar cell provided in the disclosure, the difficulty in production and the limitation on conversion efficiency as a result of precise requirements for the accuracy of a thickness of a conventional tunneling layer are resolved.

Frontside metallization pastes for solar cell electrodes contain siloxanes. Metallization pastes containing siloxanes can be used to fabricate fine line, high aspect ratio, solar cell gridlines.

An image sensor with high quantum efficiency is provided. In some embodiments, a semiconductor substrate includes a non-porous semiconductor layer along a front side of the semiconductor substrate. A periodic structure is along a back side of the semiconductor substrate. A high absorption layer lines the periodic structure on the back side of the semiconductor substrate. The high absorption layer is a semiconductor material with an energy bandgap less than that of the non-porous semiconductor layer. A photodetector is in the semiconductor substrate and the high absorption layer. A method for manufacturing the image sensor is also provided.

Techniques for enhancing the absorption of photons in semiconductors with the use of microstructures are described. The microstructures, such as pillars and/or holes, effectively increase the effective absorption length resulting in a greater absorption of the photons. Using microstructures for absorption enhancement for silicon photodiodes and silicon avalanche photodiodes can result in bandwidths in excess of 10 Gb/s at photons with wavelengths of 850 nm, and with quantum efficiencies of approximately 90% or more.

Frontside metallization pastes for solar cell electrodes contain siloxanes. Metallization pastes containing siloxanes can be used to fabricate fine line, high aspect ratio, solar cell gridlines.