Disclosed is a solar cell including a semiconductor substrate, and a dopant layer disposed over one surface of the semiconductor substrate and having a crystalline structure different from that of the semiconductor substrate, the dopant layer including a dopant. The dopant layer includes a plurality of semiconductor layers stacked one above another in a thickness direction thereof, and an interface layer interposed therebetween. The interface layer is an oxide layer having a higher concentration of oxygen than that in each of the plurality of semiconductor layers.

Methods, systems, and devices are disclosed for implementing high conversion efficiency solar cells. In one aspect, an optical-to-electrical energy conversion device includes a substrate formed of a doped semiconductor material and having a first region and a second region, an array of multilayered nanoscale structures protruding from the first region of the substrate, in which the nanoscale structures are formed of a first co-doped semiconductor material covered by a layer of a second co-doped semiconductor material forming a core-shell structure, the layer covering at least a portion of the doped semiconductor material of the substrate in the second region, and an electrode formed on the layer-covered portion of the substrate in the second region, in which the multilayered nanoscale structures provide an optical active region capable of absorbing photons from light at one or more wavelengths to generate an electrical signal presented at the electrode.

Methods, systems, and devices are disclosed for implementing high conversion efficiency solar cells. In one aspect, an optical-to-electrical energy conversion device includes a substrate formed of a doped semiconductor material and having a first region and a second region, an array of multilayered nanoscale structures protruding from the first region of the substrate, in which the nanoscale structures are formed of a first co-doped semiconductor material covered by a layer of a second co-doped semiconductor material forming a core-shell structure, the layer covering at least a portion of the doped semiconductor material of the substrate in the second region, and an electrode formed on the layer-covered portion of the substrate in the second region, in which the multilayered nanoscale structures provide an optical active region capable of absorbing photons from light at one or more wavelengths to generate an electrical signal presented at the electrode.

The present application belongs to the technical field of solar cells, and relates to a p-type bifacial solar cell with partial rear surface field passivation and a preparation method therefor. The solar cell includes a p-type silicon substrate. At the bottom portion of the p-type silicon substrate are arranged, from top to bottom, a silicon oxide passivation layer, an aluminum oxide passivation layer and a rear side silicon nitride anti-reflection layer. A plurality of boron source-doped layers are embedded in the bottom portion of the p-type silicon substrate. Connected to the bottom of each of the boron source-doped layers is a rear side metal electrode layer, which penetrates each of the silicon oxide passivation layer, the aluminum oxide passivation layer and the rear side silicon nitride anti-reflection layer. The preparation method involves making a plurality of partial slots, by means of a laser, from the lower surface of the rear side silicon nitride anti-reflection layer all the way to the bottom of the p-type silicon substrate, and printing a boron source slurry into the slot region to form a high-low junction structure. The high-low junction structure increases the open-circuit voltage of a rear side cell of the bifacial solar cell. The slot region heavily doped with the boron source slurry is in contact with the metal electrode to form an ohmic contact, which results in a decrease in series resistance and an increase in fill factor, and increases the bifaciality of the cell without decreasing efficiency on the front side.

The present application belongs to the technical field of solar cells, and relates to a p-type bifacial solar cell with partial rear surface field passivation and a preparation method therefor. The solar cell includes a p-type silicon substrate. At the bottom portion of the p-type silicon substrate are arranged, from top to bottom, a silicon oxide passivation layer, an aluminum oxide passivation layer and a rear side silicon nitride anti-reflection layer. A plurality of boron source-doped layers are embedded in the bottom portion of the p-type silicon substrate. Connected to the bottom of each of the boron source-doped layers is a rear side metal electrode layer, which penetrates each of the silicon oxide passivation layer, the aluminum oxide passivation layer and the rear side silicon nitride anti-reflection layer. The preparation method involves making a plurality of partial slots, by means of a laser, from the lower surface of the rear side silicon nitride anti-reflection layer all the way to the bottom of the p-type silicon substrate, and printing a boron source slurry into the slot region to form a high-low junction structure. The high-low junction structure increases the open-circuit voltage of a rear side cell of the bifacial solar cell. The slot region heavily doped with the boron source slurry is in contact with the metal electrode to form an ohmic contact, which results in a decrease in series resistance and an increase in fill factor, and increases the bifaciality of the cell without decreasing efficiency on the front side.

Thermal neutron detectors and methods of fabricating the same are provided. A thermal neutron detector can use boron in both the neutron conversion layer and as a source for conformal doping in a semiconductor substrate. The neutron detector can be a micro-structured diode with cavities having a depth of 60 microns or less. The boron can be filled in the cavities and diffused into the semiconductor substrate via a diffusion annealing process.

Thermal neutron detectors and methods of fabricating the same are provided. A thermal neutron detector can use boron in both the neutron conversion layer and as a source for conformal doping in a semiconductor substrate. The neutron detector can be a micro-structured diode with cavities having a depth of 60 microns or less. The boron can be filled in the cavities and diffused into the semiconductor substrate via a diffusion annealing process.

A single crystal silicon wafer has a thickness between a first surface and an opposite second surface from 50 μm to 300 μm. The wafer includes a first region extending a first depth from the first surface. The first region has a reduced oxygen concentration relative to an adjacent region of the wafer. The wafer has a bulk minority carrier lifetime greater than 100 μs.

An elevated photosensor for image sensors and methods of forming the photosensor. The photosensor may have light sensors having indentation features including, but not limited to, v-shaped, u-shaped, or other shaped features. Light sensors having such an indentation feature can redirect incident light that is not absorbed by one portion of the photosensor to another portion of the photosensor for additional absorption. In addition, the elevated photosensors reduce the size of the pixel cells while reducing leakage, image lag, and barrier problems.

An elevated photosensor for image sensors and methods of forming the photosensor. The photosensor may have light sensors having indentation features including, but not limited to, v-shaped, u-shaped, or other shaped features. Light sensors having such an indentation feature can redirect incident light that is not absorbed by one portion of the photosensor to another portion of the photosensor for additional absorption. In addition, the elevated photosensors reduce the size of the pixel cells while reducing leakage, image lag, and barrier problems.