A photo detection device comprising a contact layer through which light enters; an absorbing region positioned such that light admitted through the contact layer passes into the absorbing region; at least one diffractive element operatively associated with the absorbing region operating to diffract light into the absorbing region; the configuration of the at least one diffractive element being determined by computer simulation to determine an optimal diffractive element (or elements) and absorbing region configuration for optimal quantum efficiency for at least one predetermined wavelength detection range, the at least one diffractive element operating to diffract light entering through the contact layer such that phases of diffracted waves from locations within the photo detection device or waves reflected by sidewalls and waves reflected by the at least one diffractive element form a constructive interference pattern inside the absorbing region. A method of designing a photodetector comprises using a computer simulation to determine an optimal configuration for at least one wavelength range occurring when waves reflected by the diffractive element form a constructive interference pattern inside the absorbing region.

Disclosed herein is an apparatus comprising: an array of avalanche photodiodes (APDs) or an absorption region comprising a semiconductor single crystal such as a CdZnTe single crystal or a CdTe single crystal. The apparatus may be configured to absorb radiation particles incident on an absorption region of the APDs or the semiconductor single crystal and to generate charge carriers. The apparatus may comprise an electrode comprising silver nanoparticles and being electrically connected to the absorption region of the APDs or the semiconductor single crystal. For the APDs, each of the APDs may comprise an amplification region, which may comprise a junction with an electric field in the junction. The electric field may be at a value sufficient to cause an avalanche of charge carriers entering the amplification region, but not sufficient to make the avalanche self-sustaining. The junctions of the APDs may be discrete.

Photovoltaic devices, and methods of making the same, are described.

Measuring in a first semiconductor crystal two anode channels and two cathode channels and measuring in a second semiconductor crystal one anode channel and one cathode channel; responsive to an energy of a sum of the two anode channels being within an energy window and an energy of the one anode channel being within the energy window: separating the two anode channels and the two cathode channels into combinations of anode-cathode channel pairs; for each of the anode-cathode channel pairs, determining a respective direction difference angle, each respective direction difference angle being determined via use of the one anode channel and one cathode channel; determining a determined one of the direction difference angles that has a smallest value; and setting as an initial interaction position of a photon a selected one of the anode-cathode channel pairs that corresponds to the determined direction difference angle. Additional embodiments are disclosed.

Provided is a cadmium zinc telluride (CdZnTe) single crystal including a main surface that has a high mobility lifetime product (μτ product) in a wide range, wherein the main surface has an area of 100 mm.sup.2 or more and has 50% or more of regions where the μτ product is 1.0×10.sup.−3 cm.sup.2/V or more based on the entire main surface, and a method for effectively producing the same.

A semiconductor device including a device substrate and a readout circuit substrate. The device substrate includes a device region and a peripheral region. In the device region, a wiring layer and a first semiconductor layer including a compound semiconductor material are stacked. The peripheral region is disposed outside the device region. The readout circuit substrate faces the first semiconductor layer with the wiring layer in between, and is electrically coupled to the first semiconductor layer through the wiring layer. The peripheral region of the device substrate has a junction surface with the readout circuit substrate.

Disclosed herein is an apparatus comprising: an array of avalanche photodiodes (APDs) or an absorption region comprising a semiconductor single crystal such as a CdZnTe single crystal or a CdTe single crystal. The apparatus may be configured to absorb radiation particles incident on an absorption region of the APDs or the semiconductor single crystal and to generate charge carriers. The apparatus may comprise an electrode comprising silver nanoparticles and being electrically connected to the absorption region of the APDs or the semiconductor single crystal. For the APDs, each of the APDs may comprise an amplification region, which may comprise a junction with an electric field in the junction. The electric field may be at a value sufficient to cause an avalanche of charge carriers entering the amplification region, but not sufficient to make the avalanche self-sustaining. The junctions of the APDs may be discrete.

Disclosed is an adamantine semiconductor. The semiconductor comprises a first element being from one of the following groups: VIII, VII, VI, V, IV, III, II, Ī or 0. The semiconductor also comprises at least two other elements, the at least two other elements being from group I, II, III, IV, V, VI and/or VII. The first element being from group VIII, VII, VI, V, IV, III, II, Ī or 0 includes an element not formally being from group VIII, VII, VI,V, IV, III,II, Ī or 0 but is known to assume the same oxidation state as the elements that do lie in these groups. The at least two other elements from group I, II, III, IV, V, VI and/or VII includes elements not formally being from group I, II, III, IV, V, VI and/or VII but are known to assume the same oxidation state as the elements that do lie in these groups.

A photovoltaic cell can include a dopant in contact with a semiconductor layer.

This invention relates to a method to manufacture a chip to detect the direct conversion of X-rays. It also relates to a direct conversion detector for X-rays using such a chip and dental radiology equipment using at least one such detector. The method to manufacture the wafer comprises a step for applying pressure (3, 4, 4 a) to a powdered polycrystalline semiconductor material and a step for heating (5-9) during a set time period. It comprises a preliminary step for providing an impurity level of at least 0.2% in the polycrystalline semiconductor material.