A photodiode (PD) device that monolithically integrates a PD element with a waveguide element is disclosed. The PD device includes a conducting layer with a first region and a second region next to the first region, where the PD element exists in the first region, while, the waveguide element exists in the second region and optically couples with the PD element. The waveguide element includes a core layer and a cladding layer on the conducting layer, which forms an optical confinement structure. The PD element includes an absorption layer on the conducting layer and a p-type cladding layer on the absorption layer, which form another optical confinement structure. The absorption layer has a length at least 12 m measured from the interface against the core layer.

Semiconductor devices and methods of fabricating semiconductor devices having a dilute nitride active layer and at least one semiconductor material overlying the dilute nitride active layer are disclosed. Hybrid epitaxial growth and the use of hydrogen diffusion barrier layers to minimize hydrogen diffusion into the dilute nitride active layer are used to fabricate high-efficiency multijunction solar cells and photonic devices. Hydrogen diffusion barriers can be formed through the use of layer thickness, composition, doping and/or strain.

The present disclosure generally relates to a solar cell device that includes a substrate comprising a front side surface and a backside surface; an epitaxial region overlying the substrate, wherein the epitaxial region comprises a first Bragg reflector disposed below a first solar cell, wherein the first solar cell has a first bandgap, wherein the first Bragg reflector is operable to reflect a first range of radiation wavelengths back into the first solar cell, and is operable to cool the solar cell device by reflecting a second range of radiation wavelengths that are outside the photogeneration wavelength range of the first solar cell or that are weakly absorbed by the first solar cell, and may additionally comprise a second Bragg reflector operable to reflect a third range of radiation wavelengths back into the first solar cell.

A light receiving device includes a light absorbing layer. The light absorbing layer includes multiple unit structures. Each unit structure has an InAs portion, a first GaSb portion, an InSb portion, and a second GaSb portion, which are arranged in a direction of an axis. One of the group-III atomic plane and the group-V atomic plane in the first GaSb portion is bonded to another of the group-III atomic plane and the group-V atomic plane in the InAs portion. One of the group-III atomic plane and the group-V atomic plane of the InSb portion is bonded to another of the group-III atomic plane and the group-V atomic plane of the first GaSb portion. One of the group-III atomic plane and the group-V atomic plane of the second GaSb portion is bonded to another of the group-III atomic plane and the group-V atomic plane of the InSb portion.

A light controlled semiconductor switch (LCSS), method of making, and method of using are provided. In embodiments, a vertical LCSS includes: a semiconductor body including a photoactive layer of gallium nitride (GaN) doped with carbon; a first electrode in contact with a first surface of the semiconductor body, the first electrode defining an area through which light energy from at least one light source can impinge on the first surface; and a second electrode in contact with a second surface of the semiconductor body opposed to the first surface, wherein the vertical LCSS is configured to switch from a non-conductive off-state to a conductive on-state when the light energy impinging on the semiconductor body is sufficient to raise electrons within the photoactive layer into a conduction band of the photoactive layer.

Photodetectors configured to detect light in a particular wavelength range and including a quaternary material are described herein. In some embodiments, the present invention may be directed to a photodetector that includes a collector material that is substantially transparent to the particular wavelength range and a quaternary material adjacent to the collector material, where the quaternary material functions as an absorber material and is lattice-matched to the collector material. A conduction band difference between the collector material and the quaternary material may be approximately zero. Additionally, or alternatively, the photodetector may include a peripheral layer adjacent to the quaternary material, where the peripheral layer is doped with carbon. In some embodiments, the photodetector may include an optical window configured for use with a multi-mode optical fiber.

An extreme and deep ultra-violet photovoltaic device designed to efficiently convert extreme ultra-violet (EUV) and deep ultra violet (DUV) photons originating from an EUV/DUV power source to electrical power via the absorption of photons creating electrons and holes that are subsequently separated via an electric field so as to create a voltage that can drive power in an external circuit. Unlike traditional solar cells, the absorption of the extreme/deep ultra-violet light near the surface of the device requires special structures constructed from large and ultra-large bandgap semiconductors so as to maximize converted power, eliminate absorption losses and provide the needed mechanical integrity.

A superlattice and method for forming that superlattice are disclosed. In particular, an engineered layered single crystal structure forming a superlattice is disclosed. The superlattice provides p-type or n-type conductivity, and comprises alternating host layers and impurity layers, wherein: the host layers consist essentially of a semiconductor material; and the impurity layers consist of a donor or acceptor material.

A photodiode includes an absorption layer. A cap layer is disposed on a surface of the absorption layer. A pixel diffusion area within the cap layer extends beyond the surface of the absorption layer and into the absorption layer to receive a charge generated from photons therefrom. A mesa trench is defined through the cap layer surrounding the pixel diffusion area, wherein the mesa trench defines a floor at the surface of the absorption layer and opposed sidewalls extending away from the surface of the absorption layer. An implant is aligned with the mesa trench and extends from the floor of the mesa trench through the absorption layer surrounding a portion of the absorption layer proximate the pixel diffusion area.

A photoconducting layered material arrangement for producing or detecting high frequency radiation includes a semiconductor material including an alloy comprised of InGaAs, InGaAsSb, or GaSb, with an admixture of Al, which material is applied to a suitable support substrate in a manner such that the lattices are suitably adjusted, wherewith the semiconductor material comprised of InGaAlAs, InGaAlAsSb, or GaAlSb has a band gap of more than 1 eV, as a consequence of the admixed proportion of Al. The proportion x of Al in the semiconductor material In.sub.yGa.sub.1-y-xAl.sub.xAs is between x=0.2 and x=0.35, wherewith the proportion y of in may be between 0.5 and 0.55. The support substrate is InP or GaAs.