A semiconductor device includes: a first semiconductor structure; a second semiconductor structure on the first semiconductor structure; an active region between the first semiconductor structure and the second semiconductor structure, wherein the active region includes multiple alternating well layers and barrier layers, wherein each of the barrier layers has a band gap, the active region further includes an upper surface facing the second semiconductor structure and a bottom surface opposite the upper surface; an electron blocking region between the second semiconductor structure and the active region, wherein the electron blocking region includes a band gap, and the band gap of the electron blocking region is greater than the band gap of one of the barrier layers; a first aluminum-containing layer between the electron blocking region and the active region, wherein the first aluminum-containing layer has a band gap greater than the band gap of the electron blocking region; a confinement layer between the first aluminum-containing layer and the active region, wherein the confinement layer includes a thickness smaller than the thickness of one of the barrier layers; and a p-type dopant above the bottom surface of the active region and comprising a concentration profile comprising a peak shape having a peak concentration value, wherein the peak concentration value lies in the electron blocking region.

Systems and methods of non-epitaxial high Schottky barriers heterojunction solar cells are described. The high Schottky barriers heterojunction solar cells are formed using non-epitaxial methods to reduce fabrication costs and improve scalability.

A photoconducting layered material arrangement for producing or detecting high frequency radiation includes a semiconductor material including an alloy comprised of InGaAs, InGaAsSb, or GaSb, with an admixture of Al, which material is applied to a suitable support substrate in a manner such that the lattices are suitably adjusted, wherewith the semiconductor material comprised of InGaAlAs, InGaAlAsSb, or GaAlSb has a band gap of more than 1 eV, as a consequence of the admixed proportion of Al. The proportion x of Al in the semiconductor material In.sub.yGa.sub.1-y-xAl.sub.xAs is between x=0.2 and x=0.35, wherewith the proportion y of In may be between 0.5 and 0.55. The support substrate is InP or GaAs.

A monolithic metamorphic multi-junction solar cell comprising a first III-V subcell and a second III-V subcell and a third III-V subcell and a fourth Ge subcell, wherein the subcells are stacked on top of each other in the indicated order, and the first subcell forms the topmost subcell, and a metamorphic buffer is formed between the third subcell and the fourth subcell and all subcells each have an n-doped emitter layer and a p-doped base layer, and the emitter layer of the second subcell is greater than the base layer.

The present disclosure provides a light detecting device. The light detecting devices includes an insulating layer, a silicon layer, a light detecting layer, N first doped regions and M second doped regions. The silicon layer is disposed over the insulating layer. The light detecting layer is disposed over the silicon layer and extends within at least a portion of the silicon layer. The first doped regions have a first dopant type and are disposed within the light detecting layer. The second doped regions have a second dopant type and are disposed within the light detecting layer. The first doped regions and the second doped regions are alternatingly arranged. M and N are integers equal to or greater than 2.

In this photoelectric conversion element wherein group III-IV compound semiconductor single crystals containing zinc as an impurity are used as a substrate, the substrate is increased in size without lowering conversion efficiency. A heat-resistant crucible is filled with raw material and a sealant, and the raw material and sealant are heated, thereby melting the raw material into a melt, softening the encapsulant, and covering the melt from the top with the encapsulant. The temperature inside the crucible is controlled such that the temperature of the top of the encapsulant relative to the bottom of the encapsulant becomes higher in a range that not equal or exceed the temperature of bottom of the encapsulant, and seed crystal is dipped in the melt and pulled upward with respect to the melt, thereby growing single crystals from the seed crystal. Thus, a large compound semiconductor wafer that is at least two inches in diameter and has a low dislocation density of 5,000 cm.sup.−2 can be obtained, despite having a low average zinc concentration of 5×10.sup.17 cm.sup.−3 to 3×10.sup.18 cm.sup.−3, at which a crystal hardening effect does not manifest.

An extreme and deep ultra-violet photovoltaic device designed to efficiently convert extreme ultra-violet (EUV) and deep ultra violet (DUV) photons originating from an EUV/DUV power source to electrical power via the absorption of photons creating electrons and holes that are subsequently separated via an electric field so as to create a voltage that can drive power in an external circuit. Unlike traditional solar cells, the absorption of the extreme/deep ultra-violet light near the surface of the device requires special structures constructed from large and ultra-large bandgap semiconductors so as to maximize converted power, eliminate absorption losses and provide the needed mechanical integrity.

A semiconductor device includes: a first semiconductor structure; a second semiconductor structure on the first semiconductor structure; an active region between the first semiconductor structure and the second semiconductor structure, wherein the active region comprises a well layer and a barrier layer, wherein the barrier layer has a band gap; a first electron blocking layer between the second semiconductor structure and the active region, wherein the first electron blocking layer comprises a band gap which is greater than the band gap of the barrier layer; a first aluminum-containing layer between the first electron blocking layer and the active region, wherein the first aluminum-containing layer has a band gap greater than the band gap of the first electron blocking layer; a confinement layer between the first aluminum-containing layer and the active region; and a second aluminum-containing layer between the second semiconductor structure and the first electron blocking layer; wherein both the first aluminum-containing layer and the second aluminum-containing layer have bandgaps greater than the band gap of the first electron blocking layer; and wherein a distance between the first aluminum-containing layer and an upper surface of the active region is between 3 nm and 20 nm.

A photoconducting layered material arrangement for producing or detecting high frequency radiation includes a semiconductor material including an alloy comprised of InGaAs, InGaAsSb, or GaSb, with an admixture of Al, which material is applied to a suitable support substrate in a manner such that the lattices are suitably adjusted, wherewith the semiconductor material comprised of InGaAlAs, InGaAlAsSb, or GaAlSb has a band gap of more than 1 eV, as a consequence of the admixed proportion of Al. The proportion x of Al in the semiconductor material In.sub.yGa.sub.1-y-xAl.sub.xAs is between x=0.2 and x=0.35, wherewith the proportion y of In may be between 0.5 and 0.55. The support substrate is InP or GaAs.

Various embodiments of the present disclosure are directed towards an image sensor having a photodetector disposed in a semiconductor substrate. The photodetector comprises a first doped region comprising a dopant having a first doping type. A deep well region is disposed within the semiconductor substrate, where the deep well region extends from a back-side surface of the semiconductor substrate to a top surface of the first doped region. A second doped region is disposed within the semiconductor substrate and abuts the first doped region. The second doped region and the deep well region comprise a second dopant having a second doping type opposite the first doping type, where the second dopant comprises gallium.