A first data communication device includes a first semiconductor laser for oscillating with electric power, and outputting feed light to a powered device of a second data communication device; a second semiconductor laser for first signals; a first modulator for modulating first laser light output by the second semiconductor laser to first signal light and outputting the first signal light to the second data communication device; and an optical receiver. The second data communication device includes the powered device having a photoelectric conversion element for converting the feed light into the electric power, a third semiconductor laser for second signals, and a second modulator for modulating second laser light output by the third semiconductor laser to second signal light and outputting the second signal light to the first data communication device. The optical receiver receives and converts the second signal light into an electrical signal corresponding to transmission data.

An electronic device provided with a bacteria detection element and a bacteria detection sensor, and a method of detecting bacteria by using the same are proposed. The electronic device provided with the bacteria detection element and the bacteria detection sensor are disclosed such that a first semiconductor layer, a light absorption layer, and a second semiconductor layer are provided to have respective inclined surfaces in a mesa structure, the respective inclined surfaces are passivated by an oxide, and the light absorption layer is formed as a multi-layer. The electronic device having the bacteria detection sensor provides a function capable of detecting the bacteria and even sterilizing the detected bacteria. In particular, a UVC light source and a UVA light source are mounted on a single printed circuit board, whereby the electronic device may be produced in a small size and may reduce production costs.

A light source assembly includes a plurality of cells and a driving circuit. Each of the cells includes a transistor and a light source. The transistor includes a drain region that serves as a cathode of the light source. The driving circuit is configured to drive the cell. An optical sensor cell and a method for manufacturing thereof are also disclosed.

A semiconductor device includes an optical source; a photoconductive switch triggered by the optical source; and an enclosure unit that contains the optical source and the photoconductive switch in a single integrated package. The optical source may output a laser. The optical source may be a diode. The enclosure unit may be conductive. The enclosure unit may be non-conductive. The device may include an electrical connector operatively connected to the optical source. The electrical connector may provide power and control signals to the optical source. The electrical connector may be attached to an outer surface of the enclosure unit.

High-voltage solid-state transducer (SST) devices and associated systems and methods are disclosed herein. An SST device in accordance with a particular embodiment of the present technology includes a carrier substrate, a first terminal, a second terminal and a plurality of SST dies connected in series between the first and second terminals. The individual SST dies can include a transducer structure having a p-n junction, a first contact and a second contact. The transducer structure forms a boundary between a first region and a second region with the carrier substrate being in the first region. The first and second terminals can be configured to receive an output voltage and each SST die can have a forward junction voltage less than the output voltage.

A high-voltage switch is adapted for use as a medium-voltage direct current circuit breaker, which provides a low-cost, small-footprint device to mitigate system faults. In one example, a method for operating a wideband optical device includes illuminating the wide bandgap optical device with a light within a first range of wavelengths and a first average intensity, allowing a current to propagate therethrough without substantial absorption of the current, illuminating the wide bandgap optical device with light within the first range of wavelengths and a second average intensity that is lower than the first average intensity to allow a sustained current flow though the wide bandgap optical device, and illuminating the wide bandgap optical device with light within a second range of wavelengths to stop or substantially restrict propagation of the current through the wide gap material.

In an embodiment an electronic semiconductor chip includes a growth substrate with a growth surface including a flat region having a plurality of three-dimensionally designed surface structures on the flat region, a nucleation layer composed of oxygen-containing AlN in direct contact with the growth surface at the flat region and the three-dimensionally designed surface structures and a nitride-based semiconductor layer sequence on the nucleation layer, wherein the semiconductor layer sequence overlays the three-dimensionally designed surface structures, and wherein the oxygen content in the nucleation layer is greater than 10.sup.19 cm.sup.−3.

A terahertz detector circuit can include a high electron mobility transistor (HEMT) having multiple gates that can be controlled by gate signals to generate a gate-induced modulation pattern in a two-dimensional electron gas (2DEG) of the HEMT. When the gate induced modulation pattern substantially matches a signal induced modulation pattern generated by an incident terahertz signal then a detection efficiency of the incident terahertz signal is improved. Accordingly, an electronically tunable THz detector with high efficiency can be realized. When these THz detectors are arranged in an array and electrically coupled, THz images and/or multi-spectral THz images may be generated.

High-voltage solid-state transducer (SST) devices and associated systems and methods are disclosed herein. An SST device in accordance with a particular embodiment of the present technology includes a carrier substrate, a first terminal, a second terminal and a plurality of SST dies connected in series between the first and second terminals. The individual SST dies can include a transducer structure having a p-n junction, a first contact and a second contact. The transducer structure forms a boundary between a first region and a second region with the carrier substrate being in the first region. The first and second terminals can be configured to receive an output voltage and each SST die can have a forward junction voltage less than the output voltage.

According to the embodiments provided herein, a method for forming a photovoltaic device can include depositing a plurality of semiconductor layers. The plurality of semiconductor layers can include a doped layer that is doped with a group V dopant. The doped layer can include cadmium selenide or cadmium telluride. The method can include annealing the plurality of semiconductor layers to form an absorber layer.