PV layer sequences and corresponding production methods which can reliably provide a PV function with a long service life despite very low production costs. This is achieved by a reactive conditioning process of inorganic particles as part of a room-temperature printing method; the reactive surface conditioning process adjusts the PV activity in a precise manner, provides a kinetically controlled reaction product, and can ensure the desired PV activity even when using technically pure starting materials with 97% purity. In concrete embodiments, particles are printed in composite so as to form sub-sections on a support. Each sub-section has a reductively treated section and an oxidatively treated section, and the sections have PV activity with opposite signs. The sections can be cascaded in rows via upper-face contacts, and a precise light-dependent potential sum can be tapped via a PV measuring group.

The present disclosure provides a thin film assembly and a method of preparing the same, and a hetero-junction cell including a thin film assembly. The thin film assembly comprises at least two transparent conductive oxide film layers superposed together, each of the at least two transparent conductive oxide film layers is an ITO film, the first ITO film layer is doped with a tin content of 10-15 wt %, and the second ITO film layer is doped with a tin content5 wt % and <10 wt %.

A photodiode and a related method of manufacture are disclosed. The photodiode includes a transfer gate and a floating diffusion adjacent to the transfer gate. In addition, the photodiode includes an upper terminal; an intrinsic semiconductor region in contact with the upper terminal, the intrinsic semiconductor region in a trench in a substrate adjacent to the transfer gate; and a lower terminal in contact with the intrinsic semiconductor region. An insulator layer is along an entirety of a sidewall of the intrinsic semiconductor region and between the intrinsic semiconductor region and the transfer gate. A p-type well may also optionally be between the insulator layer and the transfer gate.

The present invention discloses a preparation method of a heterojunction solar cell and the heterojunction solar cell. The method comprises: providing a substrate; respectively depositing intrinsic layers at two sides of the substrate; respectively depositing n-type doped layers and p-type doped layers on the intrinsic layers at two sides of the substrate, wherein at least two n-type doped layers and/or p-type doped layers are provided, and the doping concentration of each layer of the n-type doped layers and/or the p-type doped layers is gradually increased in a longitudinal direction away from the substrate; and respectively and sequentially forming transparent conductive oxide layers and electrode layers on the n-type doped layers and the p-type doped layers. Therefore, the conversion and production efficiencies of the cell are increased.

The present disclosure relates to an energy conversion material including: a pair of 2-dimensional active layers; and a property control layer positioned between the 2-dimensional active layers, and the property control layer is changed in any one or more of structure and state depending on an external environmental factor and performs reversible switching between the 2-dimensional active layers.

A high-voltage switch is adapted for use as a medium-voltage direct current circuit breaker, which provides a low-cost, small-footprint device to mitigate system faults. In one example, a method for operating a wideband optical device includes illuminating the wide bandgap optical device with a light within a first range of wavelengths and a first average intensity, allowing a current to propagate therethrough without substantial absorption of the current, illuminating the wide bandgap optical device with light within the first range of wavelengths and a second average intensity that is lower than the first average intensity to allow a sustained current flow though the wide bandgap optical device, and illuminating the wide bandgap optical device with light within a second range of wavelengths to stop or substantially restrict propagation of the current through the wide gap material.