A Group VB element doped with a β-gallium oxide crystalline material, and a preparation method and application thereof. The series doped with the β—Ga.sub.2O.sub.3 crystalline material is monoclinic, the space group is C2/m, the resistivity is in the range of 2.0×10.sup.−4 to 1×10.sup.4Ω.Math.cm, and/or the carrier concentration is in the range of 5×10.sup.12 to 7×10.sup.20/cm.sup.3. The preparation method comprises steps of: mixing M.sub.2O.sub.5 and Ga.sub.2O.sub.3 with a purity of 4N or more at molar ratio of (0.000000001-0.01):(0.999999999-0.99); an then performing crystal growth. The present invention can prepare a high-conductivity β-Ga.sub.2O.sub.3 crystalline material with n-type conductivity characteristics by conventional processes, providing a basis for applications thereof to electrically powered electronic devices, optoelectronic devices, photocatalysts or conductive substrates.

A method of making a coated substrate having a transparent conductive oxide layer with a dopant selectively distributed in the layer includes selectively supplying an oxide precursor material and a dopant precursor material to each coating cell of a multi-cell chemical vapor deposition coater, wherein the amount of dopant material supplied is selected to vary the dopant content versus coating depth in the resultant coating.

A method for preparing a solar cell, includes: forming a first electrode on a substrate; forming a light absorbing layer on the first electrode; and forming a second electrode on the light absorbing layer, wherein the method further comprises forming an impurity material layer including an impurity element on the light absorbing layer adjacent to the first electrode or the second electrode in any one side or both sides thereof, and forming a doping layer by diffusing the impurity element into a portion of the light absorbing layer.

Compositions, thin films, devices, and methods involving doped oxide semiconductor materials are described. Indium gallium doped zinc oxide (IGZO) with advantageous properties that may be useful as a transparent conductive oxide (TCO) is described. Methods of digital doping to create doped oxide semiconductor materials are described.

The invention relates to a process for permanently electrostatically doping a layer of a conductive or non-conductive material that is deposited on a solid substrate, to the doped material obtained according to this process, and to the use of such a material.

Methods of forming a p-type IV-doped III-VI semiconductor are provided which comprise exposing a substrate to a vapor composition comprising a group III precursor comprising a group III element, a group VI precursor comprising a group VI element, and a group IV precursor comprising a group IV element, under conditions to form a p-type IV-doped III-VI semiconductor via metalorganic chemical vapor deposition (MOCVD) on the substrate. Embodiments make use of a flow ratio defined as a flow rate of the group VI precursor to a flow rate of the group III precursor wherein the flow ratio is below an inversion flow ratio value for the IV-doped III-VI semiconductor.

A method for preparing a solar cell, includes: forming a first electrode on a substrate; forming a light absorbing layer on the first electrode; and forming a second electrode on the light absorbing layer, wherein the method further comprises forming an impurity material layer including an impurity element on the light absorbing layer adjacent to the first electrode or the second electrode in any one side or both sides thereof, and forming a doping layer by diffusing the impurity element into a portion of the light absorbing layer.

Provided is a semiconductor material having improved oxidation resistance. The semiconductor material has a single crystal represented by the following composition formula:
Mg.sub.2Sn.Math.Zn.sub.aComposition formula:
in which, a is a Zn content of from 0.05 to 1 at % relative to Mg.sub.2Sn.

A Group VB element doped with a -gallium oxide crystalline material, and a preparation method and application thereof. The series doped with the Ga.sub.2O.sub.3 crystalline material is monoclinic, the space group is C2/m, the resistivity is in the range of 2.010.sup.4 to 110.sup.4.Math.cm, and/or the carrier concentration is in the range of 510.sup.12 to 710.sup.20/cm.sup.3. The preparation method comprises steps of: mixing M.sub.2O.sub.5 and Ga.sub.2O.sub.3 with a purity of 4N or more at molar ratio of (0.000000001-0.01):(0.999999999-0.99); an then performing crystal growth. The present invention can prepare a high-conductivity -Ga.sub.2O.sub.3 crystalline material with n-type conductivity characteristics by conventional processes, providing a basis for applications thereof to electrically powered electronic devices, optoelectronic devices, photocatalysts or conductive substrates.

This invention relates to an electronic semiconductive component comprising at least one layer (2,3) of a p-type or n-type material, wherein the layer of a said p- or n-type material is constituted by a metal hydride having a chosen dopant. The invention also relates to methods for producing the component.