The embodiments of the present disclosure provides a display panel and a display device. The display panel includes a display layer, and a solar cell disposed on the side of light emitting of the display layer and located on at least the part of display region of the display layer; the solar cell is used to supply power for the display layer; the solar cell comprises a first electrode and a second electrode which are transparent, and a photoelectric conversion layer disposed between the first electrode and the second electrode, the photoelectric conversion layer is configured to transmit at least a part of visible light, and to convert the absorbed light into electrical energy.

Embodiments described herein relate generally to a n-type layer, a solar cell, a multi-junction solar cell, a solar cell module, and a photovoltaic power generation system. An n-type layer according to an embodiment includes amorphous gallium oxide as a main component. A conductive type of the n-type layer is n-type. One or more lanthanoid series elements whose amount is more than 0 [atom %] and 67 [atom %] or less of Ga contained in the amorphous gallium oxide are doped at Ga (II) site of the amorphous gallium oxide.

A novel compound semiconductor which can be used for a solar cell, a thermoelectric material, or the like, and the use thereof.

Various devices, systems and methods such as photonductive semiconductor switches (PCSS) and optically addressable light valves (OALVs) include a photoconducting ?-Ga.sub.2O.sub.3 layer having a transition metal (TM) doped region formed by diffusion of transition metal into a ?-Ga.sub.2O.sub.3 substrate. The diffusion of the TM into the ?-Ga.sub.2O.sub.3 substrate provides for the controlled concentration and thickness of the doped TM region that is integrated into the bulk ?-Ga.sub.2O.sub.3 substrate.

The present invention provides a method for manufacturing a wide-bandgap oxide epitaxial film. An epitaxial film with superior physical properties, such as high saturated drift velocity of electrons, small dielectric constant, high thermal stability, and excellent high-temperature resistance, is formed on a substrate. In addition, because the oxide epitaxial film is grown by metal-organic chemical vapor deposition (MOCVD), the yield is improved significantly and defects in the epitaxy is reduced.

An ultraviolet based spin-electronics device includes a Si-based substrate, an n-type semiconductor layer located on the Si-based substrate, wherein the n-type semiconductor layer includes an Sn-doped ?-Ga.sub.2O.sub.3 material, a p-type semiconductor layer located on the n-type semiconductor layer to form a p-n junction, the p-type semiconductor layer including MnO quantum dots, QDs, and first and second electrodes electrically connected to the n-type semiconductor layer and the p-type semiconductor layer, respectively. Spins of charge carriers in the p-type semiconductor layer are aligned according to a first direction when incident UV light has a first polarization, and according to a second direction, opposite to the first direction, when the incident UV light has a second polarization, different from the first polarization.

A solar cell includes a light-absorbing layer, comprising a Cu compound or Cd compound, between two electrodes facing each other, has an impurity material layer, comprising an impurity element to be provided to the Cu compound or Cd compound, formed on any one side or both sides between the two electrodes and the light absorbing layer, and has a doping layer formed on one part of the light absorbing layer by means of the impurity element being diffused on the light absorbing layer.

An alloyed halide double perovskite material, an alloyed halide double perovskite solar-cell absorber and solar cells constructed with such absorbers, the alloyed halide double perovskite material having the formula A.sub.2B.sub.1-aB.sub.1-bD.sub.xX.sub.6, where A is an inorganic cation, an organic cation, a mixture of inorganic cations, a mixture of organic cations, or a mixture of one or more inorganic cations and one or more organic cations, where B is a metal, a mixture of metals, a metalloid, a mixture of metalloids, any mixture thereof, or is a vacancy, where B is a metal, a mixture of metals, a metalloid, a mixture of metalloids, any mixture thereof, or is a vacancy, where D is a dopant, and where X is a halide, a pseudohalide, a mixture of halides, a mixture of pseudohalides, or a mixture of halides and pseudohalides, and where x=a+b.

The invention relates to a process for permanently electrostatically doping a layer of a conductive or non-conductive material that is deposited on a solid substrate, to the doped material obtained according to this process, and to the use of such a material.

A method of making a coated substrate having a transparent conductive oxide layer with a dopant selectively distributed in the layer includes selectively supplying an oxide precursor material and a dopant precursor material to each coating cell of a multi-cell chemical vapor deposition coater, wherein the amount of dopant material supplied is selected to vary the dopant content versus coating depth in the resultant coating.