A sputter deposition method includes sputtering a first target material onto a web substrate moving through a first process module while heating the substrate, providing the substrate from the first process module to a connection unit containing a roller assembly including a plurality of cylindrical rollers, bending the substrate at an angle of 10 to 40 around the roller assembly in the connection unit, providing the substrate from the connection unit to a second process module, and sputtering a second target material onto the substrate moving through the second process module while heating the substrate.

A chalcogen-resistant material including at least one of a conductive elongated nanostructure layer and a high work function material layer is deposited on a transition metal layer on a substrate. A semiconductor chalcogenide material layer is deposited over the chalcogen-resistant material. The conductive elongated nanostructures, if present, can reduce contact resistance by providing direct electrically conductive paths from the transition metal layer through the chalcogen-resistant material and to the semiconductor chalcogenide material. The high work function material layer, if present, can reduce contact resistance by blocking chalcogenization of the transition metal in the transition metal layer. Reduction of the contact resistance can enhance efficiency of a solar cell including the chalcogenide semiconductor material.

To provide a colored optical layer capable of forming a solar cell module excellent in the design, and the power generation efficiency and the weather resistance, a method for producing an optical layer, an optical layer-provided solar cell module, an outer wall material for building, and a building.

An optical layer having a functional layer containing an inorganic pigment and a matrix in which the inorganic pigment is dispersed, to be disposed on the side of plane of incidence of sunlight from solar cells,

wherein at least a part of the inorganic pigment is an inorganic pigment having a maximum near infrared reflectance in a near infrared region at a wavelength of from 780 to 1,500 nm of at least 50%, an average particle size of from 5.0 to 280.0 nm and a specific surface area of from 5.0 to 1,000 m.sup.2/g.

The patent application relates to a PN junction as well as the preparation method and use thereof. Said PN junction comprises a p-type CIGS semiconductor thin film layer and an n-type CIGS semiconductor thin film layer, wherein the n-type CIGS semiconductor thin film layer comprises or consists essentially of elements Cu, In, Ga and Se, where the Cu to In molar ratio is within the range of 1.1 to 1.5, and has a chemical formula of Cu(In.sub.xGa.sub.1-x)Se.sub.2, where x is within the range of 0.6 to 0.9. The patent application further relates to a semiconductor thin film element comprising said PN junction, in particular a photodiode element, and a photoelectric sensing module comprising said semiconductor thin film element as well as the various uses thereof.

A photovoltaic (PV) device having a quantum dot sensitized interface includes a first conductor layer and a second conductor layer. At least one of the conductor layers is transparent to solar radiation. A quantum dot (nanoparticle) sensitized photo-harvesting interface comprises a photo-absorber layer, a quantum dot layer and a buffer layer, placed between the two conductors. The absorber layer is a p-type material and the buffer layer is an n-type material. The quantum dot layer has a tunable bandgap to cover infrared (IR), visible light and ultraviolet (UV) bands of solar spectrum.

The invention provides a film having a composition Ag.sub.wCu.sub.1wIn.sub.rGa.sub.xKySe.sub.2(1z)Q.sub.2z; wherein K is Al or Tl or a combination of these; Q is S or Te or a combination of these; w is in a range from 0.01 to 0.75; x is in a range from 0.1 to 0.8; and r, y and z are each independently in a range from 0 to 1, provided that r+x+y=1. Methods of making the film can include processing temperatures not exceeding 500 C.

To provide a coating material capable of forming a solar cell module excellent in the weather resistance, the power generation efficiency and the design, a cover glass, a solar cell module comprising the cover glass, and an outer wall material for building.

The cover glass of the present invention is a cover glass comprising a glass plate and a layer containing a fluorinated polymer having units based on a fluoroolefin, on at least one surface of the glass plate, which has an average visible reflectance of from 10 to 100%, and an average near infrared transmittance of from 20 to 100%.

A solar tile and method for manufacturing solar tiles as a roofing surface with improved aesthetics that reduce the visual differences between solar and non-solar portions of tile. Roof tiles include an active area of thin-film photovoltaic material and an inactive area of thin-film photovoltaic material.

According to one embodiment, a solar cell system includes a first solar cell including a first terminal and a second terminal, a second solar cell including a third terminal and a fourth terminal, and a voltage converter including a fifth terminal and a sixth terminal. The third terminal is electrically connected to the first terminal. The fifth terminal is electrically connected to the fourth terminal. The voltage converter causes a second absolute value to be smaller than a first absolute value. The first absolute value is of a difference between a first potential difference and a second potential difference. The first potential difference is between the first and second terminals. The second potential difference is between the first and fourth terminals. The second absolute value is of a difference between the first and third potential differences. The third potential difference is between the first and sixth terminals.

Disclosed a precursor compound for producing a photoactive layer of a thin film solar cell that may be used as a precursor of a CIS, CGS or CIGS thin film that may be used as a photoactive layer of a solar cell, and a production method thereof. The precursor compound is represented by a following Chemical Formula 1:

##STR00001##

wherein, in the Chemical Formula 1, X represents indium (In) or gallium (Ga), Y represents chlorine (Cl) or iodine (I), each of R.sub.1, R.sub.2, R.sub.3 and R.sub.4 independently represents a methyl group, a propyl group or an alkyl group having 2 to 10 carbon atoms.