A semiconductor device including pixels arranged in a matrix of n rows and m columns, in which the pixels in the m-th column are shielded from light, is provided.

A multijunction solar cell includes a base substrate comprising a Group IV semiconductor and a dopant of a first carrier type. A patterned emitter is formed at a first surface of the base substrate. The patterned emitter comprises a plurality of well regions doped with a dopant of a second carrier type in the Group IV semiconductor. The base substrate including the patterned emitter form a first solar subcell. The multijunction solar cell further comprises an upper structure comprising one or more additional solar subcells over the first solar subcell. Methods of making a multijunction solar cell are also described.

A DC power supply system that limits the number of times of charging/discharging of the storage battery when a DC load is connected to a DC bus line. The system includes a DC bus line connectable to a DC load; a power generation device for supplying electric power to the DC bus line; a secondary battery for supplying electric power to the DC bus line; a DC-AC converter connected between the DC bus line and an AC power system; and a controller that controls power supply from the power generation device, the secondary battery, and the DC-AC converter to the DC bus line, and when the power supply of the power generation device cannot satisfy a power supply request of the DC load, the controller controls the DC-AC converter to supply electric power in preference to the secondary battery from the power system.

A composition of matter having a coated silicon substrate with multiple alternating layers of polydopamine and polyallylamine bound copper-indium-gallium oxide (CIGO) nanoparticles on the substrate. A related composition of matter having polyallylamine bound to CIGO nanoparticles to form PAH-coated CIGO nanoparticles. A related CIGO thin film made via conversion of layer-by-layer assembled CIGO nanoparticles and polyelectrolytes. CIGO nanoparticles are created via a flame-spray pyrolysis method using metal nitrate precursors, subsequently coated with polyallylamine (PAH), and dispersed in aqueous solution. Multilayer films are assembled by alternately dipping a substrate into a solution of either polydopamine or polystyrenesulfonate and then in the CIGO-PAH dispersion to fabricate CIGO films as thick as 1-2 microns.

Present subject matter provides a semiconductor nanocrystal comprises a core and a shell. The core is fabricated from a first semiconductor. The shell is fabricated from a second semiconductor. The optical cross section of the semiconductor nanocrystal is in a range of 10.sup.17 cm.sup.2-10.sup.12 cm.sup.2 in a 2-3 eV region. The core is less than 2 nanometers from an outer surface of the shell in at least one region of the semiconductor nanocrystal. Present subject matter also provides method for preparation of the semiconductor nanocrystals and method for photosynthesis of organic compounds.

A method (200) for fabricating thin-film optoelectronic devices (100), the method comprising: providing a substrate (110), forming a back-contact layer (120); forming at least one absorber layer (130) made of an ABC chalcogenide material, adding at least one alkali metal (235), and forming at least one cavity (236, 610, 612, 613) at the surface of the absorber layer wherein forming of said at least one cavity is by dissolving away from said surface of the absorber layer at least one crystal aggregate comprising at least one alkali crystal comprising at least one alkali metal. The method (200) is advantageous for more environmentally-friendly production of photovoltaic devices (100) on flexible substrates with high photovoltaic conversion efficiency and faster production rate.

Techniques for precisely controlling the composition of volatile components (such as sulfur (S), selenium (Se), and tin (Sn)) of chalcogenide semiconductors in real-timeduring production of the material are provided. In one aspect, a method for forming a chalcogenide semiconductor material includes providing a S source(s) and a Se source(s); heating the S source(s) to form a S-containing vapor; heating the Se source(s) to form a Se-containing vapor; passing a carrier gas first through the S-containing vapor and then through the Se-containing vapor, wherein the S-containing vapor and the Se-containing vapor are transported via the carrier gas to a sample; and contacting the S-containing vapor and the Se-containing vapor with the sample under conditions sufficient to form the chalcogenide semiconductor material. A multi-chamber processing apparatus is also provided.

An imaging device that facilitates pooling processing.

A pixel region includes a plurality of pooling modules and an output circuit, the pooling module includes a pooling circuit and a comparison module, the pooling circuit includes a plurality of pixels and an arithmetic circuit, and the comparison module includes a plurality of comparison circuits and a determination circuit. The pixel can obtain a first signal through photoelectric conversion, and can multiply the first signal by a given scaling factor to generate a second signal. The pooling circuit adds a plurality of second signals in the arithmetic circuit to generate a third signal, the comparison module compares a plurality of third signals and outputs the largest third signal to the determination circuit, and the determination circuit determines the largest third signal and binarizes it to generate a fourth signal. In the imaging device, the pooling module performs pooling processing in accordance with the number of pixels and outputs data obtained by the pooling processing.

Techniques for electrodepositing selenium (Se)-containing films are provided. In one aspect, a method of preparing a Se electroplating solution is provided. The method includes the following steps. The solution is formed from a mixture of selenium oxide; an acid selected from the group consisting of alkane sulfonic acid, alkene sulfonic acid, aryl sulfonic acid, heterocyclic sulfonic acid, aromatic sulfonic acid and perchloric acid; and a solvent. A pH of the solution is then adjusted to from about 2.0 to about 3.0. The pH of the solution can be adjusted to from about 2.0 to about 3.0 by adding a base (e.g., sodium hydroxide) to the solution. A Se electroplating solution, an electroplating method and a method for fabricating a photovoltaic device are also provided.

A method for fabricating thin-film optoelectronic devices (100), the method comprising: providing a alkali-nondiffusing substrate (110), forming a back-contact layer (120); forming at least one absorber layer (130) made of an ABC chalcogenide material, adding least one and advantageously at least two different alkali metals, and forming at least one front-contact layer (150) wherein one of said alkali metals comprise Rb and/or Cs and where, following forming said front-contact layer, in the interval of layers (470) from back-contact layer (120), exclusive, to front-contact layer (150), inclusive, the comprised amounts resulting from adding alkali metals are, for Rb and/or Cs, in the range of 500 to 10000 ppm and, for the other alkali metals, typically Na or K, in the range of 5 to 2000 ppm and at most 1/2 and at least 1/2000 of the comprised amount of Rb and/or Cs. The method (200) is advantageous for more environmentally-friendly production of photovoltaic devices on flexible substrates with high photovoltaic conversion efficiency and faster production rate.