Disclosed is an adamantine semiconductor. The semiconductor comprises a first element being from one of the following groups: VIII, VII, VI, V, IV, III, II, or 0. The semiconductor also comprises at least two other elements, the at least two other elements being from group I, II, III, IV, V, VI and/or VII. The first element being from group VIII, VII, VI, V, IV, III, II, or 0 includes an element not formally being from group VIII, VII, VI, V, IV, III, II, or 0 but is known to assume the same oxidation state as the elements that do lie in these groups. The at least two other elements from group I, II, III, IV, V, VI and/or VII includes elements not formally being from group I, II, III, IV, V, VI and/or VII but are known to assume the same oxidation state as the elements that do lie in these groups.

Provided are a solar cell and a method of manufacturing the same. The solar cell includes a substrate, a first electrode on the substrate, a second electrode on the first electrode, and at least one semiconductor layer interposed between the first and second electrodes, and a first connection layer interposed between the first electrode and the semiconductor layer and electrically connecting the first and second electrodes to each other. The first connection layer includes a plurality of two-dimensional layers vertically extending from a top surface of the first electrode to a bottom surface of the semiconductor layer. The two-dimensional layers include a metal compound.

Provided are a thin-film solar cell module structure and a method of manufacturing the same.

A photovoltaic device includes a first contact and a hybrid absorber layer. The hybrid absorber layer includes a chalcogenide layer and a semiconductor layer in contact with the chalcogenide layer. A buffer layer is formed on the absorber layer, and a transparent conductive contact layer is formed on the buffer layer.

A solar cell with a molybdenum back electrode layer and a molybdenum selenide ohmic contact layer over the molybdenum back electrode, is provided. The molybdenum selenide layer includes an accurately controlled thickness. A distinct interface exists between the molybdenum back electrode layer and the molybdenum silicide layer. The molybdenum silicide layer is produced by forming a molybdenum layer or a molybdenum nitride layer or a molybdenum oxide layer over an initially formed molybdenum layer such that an interface exists between the two layers. A selenization and sulfurization process is carried out to selectively convert the molybdenum-containing layer to molybdenum selenide but not the original molybdenum back electrode layer which remains as a molybdenum layer.

A photovoltaic device interconnect contains a first connection region, a second connection region, and an overlap region disposed between the first and second connection regions. The interconnect includes an electrically conductive layer disposed in the first, second, and overlap regions. The conductive layer includes an electrically conductive network of nanowires. A first dielectric layer is disposed on a lower surface of the conductive layer in the first connection region and the overlap region, and a second dielectric layer is disposed on an upper surface of the conductive layer in the second connection region and the overlap region.

A photovoltaic device interconnect contains a first connection region, a second connection region, and an overlap region disposed between the first and second connection regions. The interconnect includes a first dielectric layer disposed in the first connection region and the overlap region, a second dielectric layer disposed in the second connection region and overlapped with the first dielectric layer in the overlap region, an electrically conductive element including a wire or a metal foil, disposed on an upper surface of the first dielectric layer, and an electrically conductive network of nanowires disposed on a lower surface of the second dielectric layer and electrically connected to the conductive element in the overlap region.

The present disclosure relates to a solid-state image capturing element, a manufacturing method therefor, and an electronic device, which are capable of controlling a thickness of a depletion layer. The solid-state image capturing element includes pixels each in which a photoelectric conversion film configured to perform photoelectric conversion on incident light and a fixed charge film configured to have a predetermined fixed charge are stacked on a semiconductor substrate. The technology of the present disclosure can be applied to, for example, back surface irradiation type solid-state image capturing elements, image capturing devices such as digital still cameras or video cameras, mobile terminal devices having an image capturing function, and electronic devices using a solid-state image capturing element as an image capturing unit.

Certain example embodiments relate to electric, potentially-driven shades usable with insulating glass (IG) units, IG units including such shades, and/or associated methods. In such a unit, a dynamic shade is located between the substrates defining the IG unit, and is movable between retracted and extended positions. The dynamic shade includes on-glass layers including a transparent conductor and an insulator or dielectric film, as well as a shutter. The shutter includes a resilient polymer, a conductor, and optional ink. Holes, invisible to the naked eye, may be formed in the polymer. When the conductor is reflective, overcoat layers may be provided to help reduce internal reflection. The polymer may be capable of surviving high-temperature environments and may be colored in some instances. The shade, when extended, may be used as a solar collector in some instances.

A detector for optical detection of at least one object, the detector including: at least one optical sensor including at least one sensor region. The optical sensor is configured to generate at least one sensor signal dependent on an illumination of the sensor region by an incident modulated light beam. The sensor signal is dependent on a modulation frequency of the light beam. The sensor region includes at least one capacitive device including at least two electrodes. At least one insulating layer and at least one photosensitive layer are embedded between the electrodes, wherein at least one of the electrodes is at least partially optically transparent for the light beam. The detector further includes at least one evaluation device configured to generate at least one item of information on a position of the object by evaluating the sensor signal.