A laser sintering deposition method for disposing lead selenide onto a substrate. The method includes: wet-milling a lead selenide ingot mixed with methanol into a colloidal slurry containing nanocrystals; separating the colloidal slurry into nanocrystal particles and the methanol; depositing the nanocrystal particles to a substrate; and emitting coherent infrared light onto the nanocrystal particles for fusing into a lead selenide crystalline film. Afterwards, the lead selenide film can be exposed to oxygen to form a lead selenite layer, and subsequently to iodine gas to produce a lead iodide layer onto the lead selenite layer.

The present disclosure provides a photodiode based on a stannous selenide sulfide nanosheet/GaAs heterojunction and a preparation method and use thereof. The photodiode comprises a structure of the stannous selenide sulfide nanosheet/GaAs heterojunction, forming Au electrodes through thermal vapor deposition on the stannous selenide sulfide nanosheet and GaAs, respectively, and conducting an annealing treatment in a protective gas at a temperature in a range of 150-250° C. The heterojunction is formed by transferring the stannous selenide sulfide nanosheet to a GaAs window, and the GaAs window is obtained by depositing a medium layer film on GaAs and etching the medium layer through lithography and an etchant.

A method of manufacturing a lead salt thin film on a substrate by seeding a substrate with a lead salt solution (e.g., PbSe, PbS, or PbTe) to form a seeded substrate comprising lead salt seed crystals, and growing the lead salt thin film upon the substrate by exposing the seeded substrate to a chemical bath comprising the lead salt solution at a predetermined growth temperature. A lead salt thin film manufactured by the process. A photonic crystal microchip comprising the lead salt thin film. A gas sensing device comprising a diode laser, a mid-infrared photodetector, and the photonic crystal microchip. A method of detecting a hydrocarbon gas, comprising exposing a gas sample to the gas sensing device, and determining the content of hydrocarbon gases in the gas sample.

The present disclosure relates to a solar battery. The solar battery comprises a semiconductor structure, a back electrode, and an upper electrode. The semiconductor structure defines a first surface and a second surface. The semiconductor structure comprises an N-type semiconductor layer and a P-type semiconductor layer. The back electrode is located on the first surface. The upper electrode is located on the second surface. The back electrode comprises a first carbon nanotube, the upper electrode comprises a second carbon nanotube, and the first carbon nanotube intersects with the second carbon nanotube. A multilayer structure is formed by an overlapping region of the first carbon nanotube, the semiconductor structure and the second carbon nanotube.

Disclosed are a functional photoresist for patterning a nanoparticle thin film including nanoparticles on a substate and a method of patterning a nanoparticle thin film using the functional photoresist, wherein the functional photoresist includes a photoactive compound (PAC); and a functional ligand that is bound to the surfaces of the nanoparticles and controls the physical properties of the nanoparticles.

The present disclosure is a photoelectric conversion element including: a photoelectric conversion layer 5 including a first quantum dot 4a and a second quantum dot 4b, a ratio X of the number of heavy metal atoms to the number of oxygen group atoms is less than 2 on a surface of the nanoparticle of the first quantum dot 4a, the ratio X is greater than or equal to 2 on a surface of the nanoparticle of the second quantum dot 4b, and Equation (1) is satisfied:
0.3<N  (1),
where N denotes a ratio of the number of second quantum dots to the number of first quantum dots.

Provided are a method for preparing a high-performance wafer-level lead sulfide near infrared photosensitive thin film. Firstly, a surface of the selected substrate material is cleaned; next, a vaporized oxidant is introduced into a vacuum evaporation chamber under a high background vacuum degree, and a PbS thin film is deposited on the clean substrate surface to obtain a microstructure with medium particle, loose structure and consistent orientation. Finally, under a given temperature and pressure, a high-performance wafer-level PbS photosensitive thin film is obtained by sensitizing the film prepared at step S2 using iodine vapor carried by a carrier gas. This preparation method is simple, low-cost and repeatable. The PbS photosensitive thin film has a high photoelectric detection rate. The 600K blackbody room temperature peak detection rate is >8×1010 Jones. The corresponding non-uniformity in a wafer-level photosensitive surface is <5%, satisfying the requirements of preparation of a PbS Mega-pixel-level array imaging system.

Photovoltaic devices, and methods of fabricating photovoltaic devices. The photovoltaic devices may include a first electrode, at least one quantum dot layer, at least one semiconductor layer, and a second electrode. The first electrode may include a layer including Cr and one or more silver contacts.

The invention provides an image sensor, the image sensor includes a substrate, a first circuit layer located on the substrate, and at least one nanowire photodiode located on the first circuit layer and electrically connected to the first circuit layer, the nanowire photodiode comprises a lower material layer and an upper material layer with a P-N junction between the lower material layer and the upper material layer, the lower material layer includes perovskite material.

Techniques for precisely controlling the composition of volatile components (such as sulfur (S), selenium (Se), and tin (Sn)) of chalcogenide semiconductors in real-time—during production of the material are provided. In one aspect, a method for forming a chalcogenide semiconductor material includes providing a S source(s) and a Se source(s); heating the S source(s) to form a S-containing vapor; heating the Se source(s) to form a Se-containing vapor; passing a carrier gas first through the S-containing vapor and then through the Se-containing vapor, wherein the S-containing vapor and the Se-containing vapor are transported via the carrier gas to a sample; and contacting the S-containing vapor and the Se-containing vapor with the sample under conditions sufficient to form the chalcogenide semiconductor material. A multi-chamber processing apparatus is also provided.