Aspects of the subject disclosure may include, for example, a photo detecting device that includes a bottom gate, a bilayer semiconductor formed on the bottom gate, and a top gate above the bilayer semiconductor comprising a polymer electrolyte. Other embodiments are disclosed.

The present invention relates to an optical sensor, a detector comprising the optical sensor for an optical detection of at least one object, a method for manufacturing the optical sensor and various uses of the optical sensor and the detector. Furthermore, the invention relates to a human-machine interface, an entertainment device, a scanning system, a tracking system, a stereoscopic system, and a camera. The optical sensor (110) comprises a layer (112) of at least one photoconductive material (114), at least two individual electrical contacts (136, 136′) contacting the layer (112) of the photoconductive material (114), and a cover layer (116) deposited on the layer (112) of the photoconductive material (114), wherein the cover layer (116) is an amorphous layer comprising at least one metal-containing compound (120). The optical sensor (110) can be supplied as a non-bulky hermetic package which, nevertheless, provides a high degree of protection against possible degradation by humidity and/or oxygen. Moreover, the cover layer (116) is capable of activating the photoconductive material (114) which results in an increased performance of the optical sensor (110). Further, the optical sensor (110) may be easily manufactured and integrated on a circuit carrier device.

A method of fabricating a semiconductor device having two dimensional (2D) lateral hetero-structures includes forming alternating regions of a first metal dichalcogenide film and a second metal dichalcogenide film extending along a surface of a first substrate. The first metal dichalcogenide and the second metal dichalcogenide films are different metal dichalcogenides. Each second metal dichalcogenide film region is bordered on opposing lateral sides by a region of the first metal dichalcogenide film, as seen in cross-sectional view.

Provided are a method for preparing a high-performance wafer-level lead sulfide near infrared photosensitive thin film. Firstly, a surface of the selected substrate material is cleaned; next, a vaporized oxidant is introduced into a vacuum evaporation chamber under a high background vacuum degree, and a Pbs thin film is deposited on the clean substrate surface to obtain a microstructure with medium particle, loose structure and consistent orientation. Finally, under a given temperature and pressure, a high-performance wafer-level Pbs photosensitive thin film is obtained by sensitizing the film prepared at step S2 using iodine vapor carried by a carrier gas. This preparation method is simple, low-cost and repeatable. The Pbs photosensitive thin film has a high photoelectric detection rate. The 600K blackbody room temperature peak detection rate is >8×1010 Jones. The corresponding non-uniformity in a wafer-level photosensitive surface is <5%, satisfying the requirements of preparation of a Pbs Mega-pixel-level array imaging system.

A photovoltaic device includes a first contact and a hybrid absorber layer. The hybrid absorber layer includes a chalcogenide layer and a semiconductor layer in contact with the chalcogenide layer. A buffer layer is formed on the absorber layer, and a transparent conductive contact layer is formed on the buffer layer.

Photo-detectors disclosed include at least one of a thin film or a heterostructure of photo-sensitive material and a pair of Ohmic contacts coupled to the at least one of the thin film or the heterostructure. The at least one of the thin film or the heterostructure is configured to be under a strain gradient to induce shift current flow within the material to perform photo-detection in a frequency range that includes a mid-infrared frequency range. The photo-detectors provided for can include a variety of configurations, such as a lateral configuration or a vertical configuration, and can operate in self-powered and negative illumination regimes. Associated methods are also provided, which can include inducing a strain gradient and performing photo-detection in a frequency range that includes a mid-infrared frequency range.

The invention provides an image sensor, the image sensor includes a substrate, a first circuit layer located on the substrate, and at least one nanowire photodiode located on the first circuit layer and electrically connected to the first circuit layer, the nanowire photodiode comprises a lower material layer and an upper material layer with a P-N junction between the lower material layer and the upper material layer, the lower material layer includes perovskite material.

According to an aspect, there is provided a structure comprising an absorbing layer for absorbing incident infrared radiation received via a receiving surface of the absorbing layer and a plurality of mushroom-shaped plasmonic elements for enhancing absorption of the incident infrared radiation into the absorbing layer. Said plurality of mushroom-shaped plasmonic elements have sub-wavelength dimensions and sub-wavelength spacings and are arranged along the receiving surface. Each of said plurality of mushroom-shaped plasmonic elements project out relative to the receiving surface.

This n-type SnS thin-film has n-type conductivity, an average thickness thereof is 0.100 μm to 10 μm, a ratio (α.sub.1.1/α.sub.1.6) of an absorption coefficient α.sub.1.1 at a photon energy of 1.1 eV to an absorption coefficient α.sub.1.6 at a photon energy of 1.6 eV is 0.200 or less, an atomic ratio of an S content to an Sn content is 0.85 to 1.10.

A photo detection element includes: a substrate; a light-receiving layer formed over the substrate, the light-receiving layer including graphene layers and spacer layers that are alternately stacked, light passing through each of the spacer layers, the spacer layers being made of insulating material; a first electrode that is in contact with the light-receiving layer; and a second electrode that is in contact with the light-receiving layer, a material of the second electrode being different from a material of the first electrode.