Improved methods and apparatus for forming thin-film layers of semiconductor material absorber layers on a substrate web. According to the present teachings, a semiconductor layer may be formed in a multi-zone process whereby various layers are deposited sequentially onto a moving substrate web.

A sol composition for producing dielectric layers on a metallic substrate including 10 to 30%, by weight of the sol composition, of a precursor including a trialkoxysilane, 10 to 40%, by weight of the sol composition, of titanium dioxide particles whose median size is below 500 nm, 4.5 to 36%, by weight of the sol composition, of silica particles whose particle size distribution D90 is below 100 nm, 5 to 15%, by weight of the sol composition, of a solvent capable of making the precursor miscible in water, 0.1 to 2%, by weight of the sol composition, of an acidic catalyst, the remainder being water.

An object of the present invention is to provide a gas barrier film which can prevent the damage of an inorganic layer even in a case where the gas barrier film is used in a product which undergoes a step of applying pressure, heat, and the like, a solar cell using the gas barrier film, and a manufacturing method of the gas barrier film. The object is achieved by a gas barrier film having a support and an inorganic layer and a protective organic layer on one surface of the support, in which the protective organic layer has a polymerized substance of a graft copolymer having an acryl polymer as a main chain and having, as a side chain, at least either an acryloyl group-terminated urethane polymer or an acryloyl group-terminated urethane oligomer, a polymerized substance of a (meth)acrylate monomer having three or more functional groups, a polymerized substance of the graft copolymer and the (meth)acrylate monomer having three or more functional groups, a (meth)acrylate polymer, and a silane coupling agent having a (meth)acryloyl group.

A CIS solar cell having flexibility and high conversion efficiency may be produced, using, as a substrate, a polyimide film which is prepared from an aromatic tetracarboxylic acid component comprising 3,3,4,4-biphenyltetracarboxylic dianhydride as the main component and an aromatic diamine component comprising p-phenylenediamine as the main component, and has a maximum dimensional change in the temperature-increasing step of from 25 C. to 500 C. within a range of from +0.6% to +0.9%, excluding +0.6%, based on the dimension at 25 C. before heat treatment.

A solar cell containing a plurality of CIGS absorber sublayers has a conversion efficiency of at least 13.4 percent and a minority carrier lifetime below 2 nanoseconds. The sublayers may have a different composition from each other.

A method for fabricating thin-film optoelectronic devices (100), the method comprising: providing a alkali-nondiffusing substrate (110), forming a back-contact layer (120); forming at least one absorber layer (130) made of an ABC chalcogenide material, adding least one and advantageously at least two different alkali metals, and forming at least one front-contact layer (150) wherein one of said alkali metals comprise Rb and/or Cs and where, following forming said front-contact layer, in the interval of layers (470) from back-contact layer (120), exclusive, to front-contact layer (150), inclusive, the comprised amounts resulting from adding alkali metals are, for Rb and/or Cs, in the range of 500 to 10000 ppm and, for the other alkali metals, typically Na or K, in the range of 5 to 2000 ppm and at most and at least 1/2000 of the comprised amount of Rb and/or Cs. The method (200) is advantageous for more environmentally-friendly production of photovoltaic devices on flexible substrates with high photovoltaic conversion efficiency and faster production rate.

A method of manufacturing a CIS solar battery includes preparing a layer-shaped member that is configured by a substrate, a first electrode layer, a CIS layer, and a second electrode layer; setting a temperature of the layer-shaped member to a second temperature that is lower than the first temperature; forming a layer of a layer forming substance having a higher linear expansion coefficient than the substrate in a solid state of the layer on the second electrode layer; and cooling the layer-shaped member. In the method, a thin-film CIS solar battery is acquired by peeling the CIS layer from the first electrode layer along with contraction of the layer of the layer forming substance caused by the cooling of the layer-shaped member.

A flexible photovoltaic apparatus is provided including a photovoltaic device that includes an array of photovoltaic cells having a first end and a second end. The array extends in a first direction from the first end to the second end. The photovoltaic apparatus further includes a first fabric that includes an insulating fabric, a first conductor disposed in the insulating fabric and connected to the first end of the array, and a second conductor disposed in the insulating fabric and connected to the second end of the array.

A solar cell containing a plurality of CIGS absorber sublayers has a conversion efficiency of at least 13.4 percent and a minority carrier lifetime below 2 nanoseconds. The sublayers may have a different composition from each other.

A solar panel includes a first photovoltaic cell, a second photovoltaic cell, and a flexible electrical connection structure which comprises an electrically conductive connector that electrically connects the first photovoltaic cell and the second photovoltaic cell in series along a connection direction. The electrically conductive connector does not extend from a first major surface of a flexible transparent insulating sheet through a thickness of the flexible transparent insulating sheet to a second major surface of the flexible transparent insulating sheet.