A solar cell can include a silicon semiconductor substrate; an oxide layer on a first surface of the silicon semiconductor substrate; a polysilicon layer on the oxide layer; a diffusion region at a second surface of the silicon semiconductor substrate; a dielectric film on the polysilicon layer; a first electrode connected to the polysilicon layer through the dielectric film; a passivation film on the diffusion region; and a second electrode connected to the diffusion region through the passivation film.

A solar cell can include a silicon semiconductor substrate; an oxide layer on a first surface of the silicon semiconductor substrate; a polysilicon layer on the oxide layer; a diffusion region at a second surface of the silicon semiconductor substrate; a dielectric film on the polysilicon layer; a first electrode connected to the polysilicon layer through the dielectric film; a passivation film on the diffusion region; and a second electrode connected to the diffusion region through the passivation film.

A solar cell module includes: two solar cells adjacent to each other in a direction parallel to a light-receiving surface; a tab line which is disposed on a front surface of one of the two solar cells and a back surface of the other of the two solar cells, and electrically connects the two solar cells; and bonding members which bond the tab line to the two solar cells, wherein bonding strength between the tab line and at least one of the two solar cells in an edge area on a side electrically connected with the other of the two solar cells by the tab line is lower than bonding strength between the tab line and the at least one of the two solar cells in a central area.

A solar cell module includes: a light-diffusing member adjacent to a solar cell; a tab line disposed on front surfaces of solar cells and having a light-diffusing shape on a light-entering side; and a protective member having first and second principal surfaces. When an average distance between a front surface of the solar cell and the second principal surface is expressed as D, a refractive index of the protective member is expressed as n, and a critical angle for total reflection satisfying sin R=1/n is expressed as R, the tab line is disposed in a zone other than a zone between a position at a distance of 3.46×D from, among ends of the light-diffusing member, an end closest to the solar cell and a position at a distance of 2×D×tan R from, among the ends, an end farthest from the solar cell.

Devices and methods for reducing optical losses in transparent conductive oxides (TCOs) used in silicon heterojunction (SHJ) solar cells while enhancing series resistance are disclosed herein. In particular, the methods include reducing the thickness of TCO layers by about 200% to 300% and depositing hydrogenated dielectric layers on top to form double layers of antireflection coating. It has been discovered that the conductivity of a thin TCO layer can be increased through a hydrogen treatment supplied from the capping dielectric during the post deposition annealing. The optimized cells with ITO/SiO.sub.x:H stacks achieved more than 41 mA/cm.sup.2 generation current on 120-micron-thick wafers while having approximately 100 Ohm/square sheet resistance. Further, solar cells and methods may include integration of ITO/SiO.sub.x:H stacks with Cu plating and use ITO/SiN.sub.x/SiO.sub.x triple layer antireflection coatings. The experimental data details the improved optics and resistance in cell stacks with varying materials and thicknesses.

Devices and methods for reducing optical losses in transparent conductive oxides (TCOs) used in silicon heterojunction (SHJ) solar cells while enhancing series resistance are disclosed herein. In particular, the methods include reducing the thickness of TCO layers by about 200% to 300% and depositing hydrogenated dielectric layers on top to form double layers of antireflection coating. It has been discovered that the conductivity of a thin TCO layer can be increased through a hydrogen treatment supplied from the capping dielectric during the post deposition annealing. The optimized cells with ITO/SiO.sub.x:H stacks achieved more than 41 mA/cm.sup.2 generation current on 120-micron-thick wafers while having approximately 100 Ohm/square sheet resistance. Further, solar cells and methods may include integration of ITO/SiO.sub.x:H stacks with Cu plating and use ITO/SiN.sub.x/SiO.sub.x triple layer antireflection coatings. The experimental data details the improved optics and resistance in cell stacks with varying materials and thicknesses.

Solar cells having emitter regions composed of wide bandgap semiconductor material are described. In an example, a method includes forming, in a process tool having a controlled atmosphere, a thin dielectric layer on a surface of a semiconductor substrate of the solar cell. The semiconductor substrate has a bandgap. Without removing the semiconductor substrate from the controlled atmosphere of the process tool, a semiconductor layer is formed on the thin dielectric layer. The semiconductor layer has a bandgap at least approximately 0.2 electron Volts (eV) above the bandgap of the semiconductor substrate.

Solar cells having emitter regions composed of wide bandgap semiconductor material are described. In an example, a method includes forming, in a process tool having a controlled atmosphere, a thin dielectric layer on a surface of a semiconductor substrate of the solar cell. The semiconductor substrate has a bandgap. Without removing the semiconductor substrate from the controlled atmosphere of the process tool, a semiconductor layer is formed on the thin dielectric layer. The semiconductor layer has a bandgap at least approximately 0.2 electron Volts (eV) above the bandgap of the semiconductor substrate.

Photovoltaic cell comprising: an assembly comprising a substrate, first and second passivation layers covering opposite faces of the substrate and also lateral faces of the substrate, and first and second charge-collecting layers; a first layer of TCO disposed against the first main face of the assembly and such that edges of the first main face of the assembly are not covered by the first layer of TCO; a second layer of TCO covering the whole of the second main face of the assembly; a non-reflective coating partly covering the first and/or second charge-collecting layers on the lateral faces of the substrate and not covered by the second layer of TCO, and also covering the edges of the first main face.

A solar cell system integrated with window glass and a blind is provided. The solar cell system includes high-power solar cell system that has two types of solar cells that are configured to absorb light with different wavelength bands from each other and are coupled to a window glass and a blind, respectively. The solar cell system includes a first solar cell that is coupled to a window glass and a second solar cell that is coupled to a blind and configured to absorb light different in wavelength band from light absorbed by the first solar cell. The band gap energy of the first solar cell is greater than the band gap energy of the second solar cell to maximize generation of electrical energy. Additionally, the second solar cell is coupled to the blind installed to open and close to increase power without degrading transmittance of the window glass.