A solar cell system integrated with window glass and a blind is provided. The solar cell system includes high-power solar cell system that has two types of solar cells that are configured to absorb light with different wavelength bands from each other and are coupled to a window glass and a blind, respectively. The solar cell system includes a first solar cell that is coupled to a window glass and a second solar cell that is coupled to a blind and configured to absorb light different in wavelength band from light absorbed by the first solar cell. The band gap energy of the first solar cell is greater than the band gap energy of the second solar cell to maximize generation of electrical energy. Additionally, the second solar cell is coupled to the blind installed to open and close to increase power without degrading transmittance of the window glass.

The invention relates to a process for fabricating a solar cell. The process comprises depositing a layer of amorphous silicon on a substrate using physical vapour deposition, said substrate being a layer of a dielectric disposed on a silicon wafer. The amorphous silicon is then annealed so as to generate a layer of polycrystalline silicon on the substrate.

The invention relates to a process for fabricating a solar cell. The process comprises depositing a layer of amorphous silicon on a substrate using physical vapour deposition, said substrate being a layer of a dielectric disposed on a silicon wafer. The amorphous silicon is then annealed so as to generate a layer of polycrystalline silicon on the substrate.

The disclosure relates to the technical field of solar cells, and provides a solar cell and a doped region structure thereof, a cell assembly, and a photovoltaic system. The doped region structure includes a first doped layer, a passivation layer, and a second doped layer that are disposed on a silicon substrate in sequence. The passivation layer is a porous structure having the first doped layer and/or the second doped layer inlaid in a hole region. The first doped layer and the second doped layer have a same doping polarity. By means of the doped region structure of the solar cell provided in the disclosure, the difficulty in production and the limitation on conversion efficiency as a result of precise requirements for the accuracy of a thickness of a conventional tunneling layer are resolved.

An solar cell is provided comprising a photoelectric conversion layer formed on a substrate formed of a semiconductor material, and a first finger electrode formed of printed conductive paste to a main surface side of the photoelectric conversion layer, wherein an average of standard deviations of heights of uneveness on a surface of the first finger electrode is 5.0 μm or less. The first finger electrode may be formed on a back surface side of the solar cell opposite to a light-receiving surface side. The substrate may be a crystalline silicon substrate. The photoelectric conversion layer may comprise the crystalline silicon substrate, an amorphous silicon layer formed on the substrate, and a transparent conductive oxide film formed on the amorphous silicon layer. The first finger electrode may be provided on the transparent conductive oxide film.

An solar cell is provided comprising a photoelectric conversion layer formed on a substrate formed of a semiconductor material, and a first finger electrode formed of printed conductive paste to a main surface side of the photoelectric conversion layer, wherein an average of standard deviations of heights of uneveness on a surface of the first finger electrode is 5.0 μm or less. The first finger electrode may be formed on a back surface side of the solar cell opposite to a light-receiving surface side. The substrate may be a crystalline silicon substrate. The photoelectric conversion layer may comprise the crystalline silicon substrate, an amorphous silicon layer formed on the substrate, and a transparent conductive oxide film formed on the amorphous silicon layer. The first finger electrode may be provided on the transparent conductive oxide film.

A solar cell, and methods of fabricating said solar cell, are disclosed. The solar cell can include a substrate having a light-receiving surface and a back surface. The solar cell can include a first semiconductor region of a first conductivity type disposed on a first dielectric layer, wherein the first dielectric layer is disposed on the substrate. The solar cell can also include a second semiconductor region of a second, different, conductivity type disposed on a second dielectric layer, where a portion of the second thin dielectric layer is disposed between the first and second semiconductor regions. The solar cell can include a third dielectric layer disposed on the second semiconductor region. The solar cell can include a first conductive contact disposed over the first semiconductor region but not the third dielectric layer. The solar cell can include a second conductive contact disposed over the second semiconductor region, where the second conductive contact is disposed over the third dielectric layer and second semiconductor region. In an embodiment, the third dielectric layer can be a dopant layer.

A photovoltaic device includes: a p- or n-type semiconductor substrate; a p-type amorphous semiconductor film and an n-type amorphous semiconductor film on a first-face side; p-electrodes on the p-type amorphous semiconductor film; and n-electrodes on the n-type amorphous semiconductor film, wherein: the p-electrodes and the n-electrodes are arranged at intervals; the p-type amorphous semiconductor film surrounds the n-type amorphous semiconductor film in an in-plane direction of the semiconductor substrate; the n-type amorphous semiconductor film has an edge portion providing an overlapping region where the n-type amorphous semiconductor film overlaps the p-type amorphous semiconductor film; and the n-electrodes are disposed in areas of the n-type amorphous semiconductor film that are surrounded by the overlapping region.

A photovoltaic device includes: a p- or n-type semiconductor substrate; a p-type amorphous semiconductor film and an n-type amorphous semiconductor film on a first-face side; p-electrodes on the p-type amorphous semiconductor film; and n-electrodes on the n-type amorphous semiconductor film, wherein: the p-electrodes and the n-electrodes are arranged at intervals; the p-type amorphous semiconductor film surrounds the n-type amorphous semiconductor film in an in-plane direction of the semiconductor substrate; the n-type amorphous semiconductor film has an edge portion providing an overlapping region where the n-type amorphous semiconductor film overlaps the p-type amorphous semiconductor film; and the n-electrodes are disposed in areas of the n-type amorphous semiconductor film that are surrounded by the overlapping region.

A solar cell and a photovoltaic module are disclosed, including: a substrate; a tunneling dielectric layer and a doped conductive layer disposed on the substrate, the tunneling dielectric layer being disposed between the doped conductive layer and a surface of the substrate, the doped conductive layer having a N-type or P-type doping element and having a plurality of first heavily doped regions spaced apart from each other and extending in a first direction, a doping concentration in the first heavily doped regions being greater than that in other regions of the doped conductive layer; a passivation layer disposed on a surface of the doped conductive layer facing away from the substrate; and a plurality of electrodes spaced apart from each other, extending in a second direction and penetrating the passivation layer to contact the doped conductive layer, at least two first heavily doped regions contacting a same electrode.