A semiconductor device includes a dielectric layer, a first trench located in the dielectric layer, a first semiconductor located in the first trench, a second semiconductor layer and an electrical connector. The dielectric layer has a first surface. The second semiconductor layer includes an active portion connecting the first semiconductor layer, and the electrical connector is located on the first surface and connects the second semiconductor layer.

Transdermal microneedles continuous monitoring system is provided. The continuous system monitoring includes a substrate, a microneedle unit, a signal processing unit and a power supply unit. The microneedle unit at least comprises a first microneedle set used as a working electrode and a second microneedle set used as a reference electrode, the first and second microneedle sets arranging on the substrate. Each microneedle set comprises at least a microneedle. The first microneedle set comprises at least a sheet having a through hole on which a barbule forms at the edge. One of the sheets provides the through hole from which the barbules at the edge of the other sheets go through, and the barbules are disposed separately.

Transdermal microneedles continuous monitoring system is provided. The continuous system monitoring includes a substrate, a microneedle unit, a signal processing unit and a power supply unit. The microneedle unit at least comprises a first microneedle set used as a working electrode and a second microneedle set used as a reference electrode, the first and second microneedle sets arranging on the substrate. Each microneedle set comprises at least a microneedle. The first microneedle set comprises at least a sheet having a through hole on which a barbule forms at the edge. One of the sheets provides the through hole from which the barbules at the edge of the other sheets go through, and the barbules are disposed separately.

In one embodiment, a lidar system includes a light source configured to emit (i) local-oscillator light and (ii) pulses of light. The lidar system also includes a receiver configured to detect the local-oscillator light and a received pulse of light, the received pulse of light including a portion of one of the emitted pulses of light scattered by a target located a distance from the lidar system. The receiver includes a detector configured to produce a photocurrent signal corresponding to a coherent mixing of the local-oscillator light and the received pulse of light. The detector includes a first input side and a second input side located opposite the first input side, where the received pulse of light is incident on the first input side of the detector, and the local-oscillator light is incident on the second input side of the detector.

In one embodiment, a lidar system includes a light source configured to emit (i) local-oscillator light and (ii) pulses of light. The lidar system also includes a receiver configured to detect the local-oscillator light and a received pulse of light, the received pulse of light including a portion of one of the emitted pulses of light scattered by a target located a distance from the lidar system. The receiver includes a detector configured to produce a photocurrent signal corresponding to a coherent mixing of the local-oscillator light and the received pulse of light. The detector includes a first input side and a second input side located opposite the first input side, where the received pulse of light is incident on the first input side of the detector, and the local-oscillator light is incident on the second input side of the detector.

A display panel, a method of manufacturing the display panel, a method of driving the display panel and a display device are provided. The display panel includes an array substrate and a plurality of micro light-emitting diodes arranged on the array substrate, and further includes: a photoelectric conversion structure in a one-to-one correspondence with a micro light-emitting diode, the photoelectric conversion structure is located on a side of the corresponding micro light-emitting diode facing the array substrate, connected to the corresponding micro light-emitting diode, and configured to convert a received light signal emitted by the micro light-emitting diode into an electrical signal, and charge the corresponding micro light-emitting diode by using the electrical signal. The display panel is used for display.

A display panel, a method of manufacturing the display panel, a method of driving the display panel and a display device are provided. The display panel includes an array substrate and a plurality of micro light-emitting diodes arranged on the array substrate, and further includes: a photoelectric conversion structure in a one-to-one correspondence with a micro light-emitting diode, the photoelectric conversion structure is located on a side of the corresponding micro light-emitting diode facing the array substrate, connected to the corresponding micro light-emitting diode, and configured to convert a received light signal emitted by the micro light-emitting diode into an electrical signal, and charge the corresponding micro light-emitting diode by using the electrical signal. The display panel is used for display.

A photodetection film includes at least one lower photodiode and upper photodiode layered members. The at least one lower photodiode layered member includes lower first-type, intrinsic and second-type semiconductor layers. The at least one upper photodiode layered member is disposed on the at least one lower photodiode layered member and includes upper first-type, intrinsic and second-type semiconductor layers. The upper intrinsic semiconductor layer has an amorphous silicon structure. The lower intrinsic semiconductor layer has a structure selected from one of a microcrystalline silicon structure, a microcrystalline silicon-germanium structure, and a non-crystalline silicon-germanium structure.

An assembly for optical to electrical power conversion including a photodiode assembly having a substrate layer and an internal side, an antireflective layer, a heterojunction buffer layer adjacent the internal side; an active area positioned adjacent the heterojunction buffer layer, a plurality of n+ electrode regions and p+ electrode regions positioned adjacent the active area, and back-contacts configured to align with the n+ and p+ electrode regions. The active area converts photons from incoming light into liberated electron hole pairs. The heterojunction buffer layer prevents electrons and holes of the liberated electron hole pairs from moving toward the substrate layer. The plurality of electrode regions are configured in an alternating pattern with gaps between each n+ and p+ electrode region. The electrode regions receive and generate electrical current from migration of the electrons and the holes, provide electrical pathways for the electrical current, and provide thermal pathways to dissipate heat.

A method of forming an opening in an insulating layer covering a semiconductor region including germanium, successively including: the forming of a first masking layer on the insulating layer; the forming on the first masking layer of a second masking layer including an opening; the etching of an opening in the first masking layer, in line with the opening of the second masking layer; the removal of the second masking layer by oxygen-based etching; and the forming of the opening of said insulating layer in line with the opening of the first masking layer, by fluorine-based etching.