A meta optical device configured to sense incident light includes a plurality of nanorods each having a shape dimension less than a wavelength of the incident light. Each nanorod includes a first conductivity type semiconductor layer, an intrinsic semiconductor layer, and a second conductivity type semiconductor layer. The meta optical device may separate and sense wavelengths of the incident light.

Aspects of the embodiments are directed to non-contact systems, methods and devices for optical detection of objects in space at precise angles. This method involves the design and fabrication of photodiode arrays for measuring angular response using self-aligned Schottky platinum silicide (PtSi) PIN photodiodes (PN-diodes with an intrinsic layer sandwiched in between) that provide linear angular measurements from incident light in multiple dimensions. A self-aligned device is defined as one in which is not sensitive to photomask layer registrations. This design eliminates device offset between “left” and right” channels for normal incident light as compared to more conventional PIN diode constructions.

An improved heterostructure for an optoelectronic device is provided. The heterostructure includes an active region, an electron blocking layer, and a p-type contact layer. The electron blocking layer is located between the active region and the p-type contact layer. In an embodiment, the electron blocking layer can include a plurality of sublayers that vary in composition.

An improved heterostructure for an optoelectronic device is provided. The heterostructure includes an active region, an electron blocking layer, and a p-type contact layer. The electron blocking layer is located between the active region and the p-type contact layer. In an embodiment, the electron blocking layer can include a plurality of sublayers that vary in composition.

Techniques and mechanisms for providing efficient direction of light to a photodetector with a tapered waveguide structure. In an embodiment, a taper structure of a semiconductor device comprises a substantially single crystalline silicon. A buried oxide underlies and adjoins the monocrystalline silicon of the taper structure, and a polycrystalline Si is disposed under the buried oxide. During operation of the semiconductor device light is redirected in the taper structure and received via a first side of a Germanium photodetector. In another embodiment, one or more mirror structures positioned on a far side of the Germanium photodetector may provide for a portion of the light to be reflected back to the Germanium photodetector.

Techniques and mechanisms for providing efficient direction of light to a photodetector with a tapered waveguide structure. In an embodiment, a taper structure of a semiconductor device comprises a substantially single crystalline silicon. A buried oxide underlies and adjoins the monocrystalline silicon of the taper structure, and a polycrystalline Si is disposed under the buried oxide. During operation of the semiconductor device light is redirected in the taper structure and received via a first side of a Germanium photodetector. In another embodiment, one or more mirror structures positioned on a far side of the Germanium photodetector may provide for a portion of the light to be reflected back to the Germanium photodetector.

A silicon-on-insulator (SOI) substrate includes a silicon dioxide layer and a silicon layer. A detection region receives a detected optical mode coupled to an incident optical mode defined by an optical waveguide in the silicon layer. The detection region consists essentially of an intrinsic semiconductor material with a spacing structure surrounding at least a portion of the detection region, which comprises p-type, n-type doped semiconductor regions adjacent to first, second portions, respectively, of the detection region. A dielectric layer is deposited over at least a portion of the spacing structure. The silicon layer is located between the dielectric layer and the silicon dioxide layer. First, second metal contact structures are formed within trenches in the dielectric layer electrically coupling to the p-type, n-type doped semiconductor regions, respectively, without contacting any of the intrinsic semiconductor material of the detection region.

A silicon-on-insulator (SOI) substrate includes a silicon dioxide layer and a silicon layer. A detection region receives a detected optical mode coupled to an incident optical mode defined by an optical waveguide in the silicon layer. The detection region consists essentially of an intrinsic semiconductor material with a spacing structure surrounding at least a portion of the detection region, which comprises p-type, n-type doped semiconductor regions adjacent to first, second portions, respectively, of the detection region. A dielectric layer is deposited over at least a portion of the spacing structure. The silicon layer is located between the dielectric layer and the silicon dioxide layer. First, second metal contact structures are formed within trenches in the dielectric layer electrically coupling to the p-type, n-type doped semiconductor regions, respectively, without contacting any of the intrinsic semiconductor material of the detection region.

Barrier infrared detectors configured to operate in the long-wave (LW) infrared regime are provided. The barrier infrared detector systems may be configured as pin, pbp, barrier and double heterostructrure infrared detectors incorporating optimized p-doped absorbers capable of taking advantage of high mobility (electron) minority carriers. The absorber may be a p-doped Ga-free InAs/InAsSb material. The p-doping may be accomplished by optimizing the Be doping levels used in the absorber material. The barrier infrared detectors may incorporate individual superlattice layers having narrower periodicity and optimization of Sb composition to achieve cutoff wavelengths of ˜10 μm.

A ridge structure (7) including at least a light-absorbing layer (4) is provided on a semiconductor substrate (1). A semiconductor embedding layer (8) has a refractive index lower than that of the light-absorbing layer (4) and embeds a side surface of the light-absorbing layer (4). A semiconductor layer (13) has a refractive index between that of the light-absorbing layer (4) and that of the semiconductor embedding layer (8) and is provided between the side surface of the light-absorbing layer (4) and the semiconductor embedding layer (8). The refractive index of the semiconductor layer (13) is n3, a wavelength of the incident light (15) is λ, a thickness of the semiconductor layer (13) in a lateral direction is in a range of-30% to +20% of λ/(4xn3).