A light receiving device includes, on a substrate, a Si waveguide core provided in a dielectric layer, a first i-type waveguide clad, an i-type core layer, a second i-type waveguide clad, p-type layers disposed on one side of a side surface of a layered structure in a light waveguide direction, the layered structure including the first i-type waveguide clad, the i-type core layer, and the second i-type waveguide clad, n-type layers disposed on the other side, and an electrode on a surface of each of the n-type layers. A width of the Si waveguide core is set to be able to suppress absorption of light in a vicinity of an input edge of the i-type core layer.

A non-diffusion type photodiode is described and has: a substrate, a buffer layer, a light absorption layer, an intermediate layer, and a multiplication/window layer. The buffer layer is disposed on the substrate. The light absorption layer is disposed on the buffer layer. The intermediate layer is disposed on the light absorption layer and has a first boundary, wherein the intermediate layer is an I-type semiconductor layer or a graded refractive index layer. The multiplication/window layer is disposed on the intermediate layer and has a second boundary, wherein in a top view, the first boundary surrounds the second boundary, and a distance between the first boundary and the second boundary is greater than or equal to 1 micrometer. The non-diffusion type photodiode can reduce generation of dark current.

A non-diffusion type photodiode is described and has: a substrate, a buffer layer, a light absorption layer, an intermediate layer, and a multiplication/window layer. The buffer layer is disposed on the substrate. The light absorption layer is disposed on the buffer layer. The intermediate layer is disposed on the light absorption layer and has a first boundary, wherein the intermediate layer is an I-type semiconductor layer or a graded refractive index layer. The multiplication/window layer is disposed on the intermediate layer and has a second boundary, wherein in a top view, the first boundary surrounds the second boundary, and a distance between the first boundary and the second boundary is greater than or equal to 1 micrometer. The non-diffusion type photodiode can reduce generation of dark current.

Techniques for enhancing the absorption of photons in semiconductors with the use of microstructures are described. The microstructures, such as pillars and/or holes, effectively increase the effective absorption length resulting in a greater absorption of the photons. Using microstructures for absorption enhancement for silicon photodiodes and silicon avalanche photodiodes can result in bandwidths in excess of 10 Gb/s at photons with wavelengths of 850 nm, and with quantum efficiencies of approximately 90% or more.

Techniques for enhancing the absorption of photons in semiconductors with the use of microstructures are described. The microstructures, such as pillars and/or holes, effectively increase the effective absorption length resulting in a greater absorption of the photons. Using microstructures for absorption enhancement for silicon photodiodes and silicon avalanche photodiodes can result in bandwidths in excess of 10 Gb/s at photons with wavelengths of 850 nm, and with quantum efficiencies of approximately 90% or more.

An apparatus for light detection includes a light, or photon, detector assembly and a dielectric resonator layer coupled to the detector assembly. The dielectric resonator layer is configured to receive transmission of incident light that is directed into the detector assembly by the dielectric resonator layer. The dielectric resonator layer resonates with a range of wavelengths of the incident light.

An apparatus for light detection includes a light, or photon, detector assembly and a dielectric resonator layer coupled to the detector assembly. The dielectric resonator layer is configured to receive transmission of incident light that is directed into the detector assembly by the dielectric resonator layer. The dielectric resonator layer resonates with a range of wavelengths of the incident light.

A large single-photon avalanche diode (SPAD) array is integrated with optical waveguide (WG) based devices. SPAD is a very sensitive optical detector fabricated on a semiconductor chip and WG structures are also built into the same chip. WG structures are configured to accumulate SPAD detection current. Together, they form an ultra-sensitive optical detector with high-speed response and a large aperture.

A large single-photon avalanche diode (SPAD) array is integrated with optical waveguide (WG) based devices. SPAD is a very sensitive optical detector fabricated on a semiconductor chip and WG structures are also built into the same chip. WG structures are configured to accumulate SPAD detection current. Together, they form an ultra-sensitive optical detector with high-speed response and a large aperture.

A display device includes a thin-film transistor layer disposed on a substrate and including thin-film transistors; and an emission material layer disposed on the thin-film transistor layer. The emission material layer includes light-emitting elements each including a first light-emitting electrode, an emissive layer and a second light-emitting electrode, light-receiving elements each including a first light-receiving electrode, a light-receiving semiconductor layer and a second light-receiving electrode, and a first bank disposed on the first light-emitting electrode and defining an emission area of each of the light-emitting elements. The light-receiving elements are disposed on the first bank.