A first n-type contact layer, a second n-type contact layer, a multiplication layer, an electric field control layer, a light absorbing layer, and a p-type contact layer are layered in this order on a substrate. The second n-type contact layer is formed between the first n-type contact layer and the light absorbing layer, is made to have an area smaller than that of the light absorbing layer in a plan view, and is disposed inside the light absorbing layer in a plan view.

There is provided an element structure of an avalanche photodiode that can operate in a high gain state while having high reliability and low noise property. There is produced an avalanche photodiode including at least a multiplication layer and a light absorbing layer between first and second semiconductor contact layers, in which an area of the first semiconductor contact layer is at least smaller than an area of the multiplication layer, the avalanche photodiode having an electric field relaxation layer configured to be depleted at an operating voltage between the first semiconductor contact layer and the multiplication layer.

An illustrative optical measurement system includes a light source configured to emit a light pulse directed at a target. The optical measurement system further includes a control circuit configured to drive the light source with a current pulse comprising a non-linear rise, and a decline from a maximum output to zero having a duration within a threshold percentage of a total pulse duration of the current pulse.

An illustrative optical measurement system includes a light source configured to emit a light pulse directed at a target. The optical measurement system further includes a control circuit configured to drive the light source with a current pulse comprising a non-linear rise, and a decline from a maximum output to zero having a duration within a threshold percentage of a total pulse duration of the current pulse.

A first SPAD array on which at least one first light beam that is at least one pulse light beam is incident and which is operated in Geiger mode, a second SPAD array on which at least one second light beam resulting from the at least one first light beam reflected by a detection object is incident and which is operated in Geiger mode, a voltage generation unit that applies a reverse bias voltage to the first SPAD array and the second SPAD array, and a SPAD photon detection rate controller that adjusts and controls a SPAD photon detection rate in accordance with a first photon detection rate indicating a rate of the number of at least one pulse signal output by the second SPAD array upon incidence of the at least one second light beam relative to the number of the at least one pulse light beam are included.

A first SPAD array on which at least one first light beam that is at least one pulse light beam is incident and which is operated in Geiger mode, a second SPAD array on which at least one second light beam resulting from the at least one first light beam reflected by a detection object is incident and which is operated in Geiger mode, a voltage generation unit that applies a reverse bias voltage to the first SPAD array and the second SPAD array, and a SPAD photon detection rate controller that adjusts and controls a SPAD photon detection rate in accordance with a first photon detection rate indicating a rate of the number of at least one pulse signal output by the second SPAD array upon incidence of the at least one second light beam relative to the number of the at least one pulse light beam are included.

A photon avalanche diode includes a semiconductor body having a first side and a second side opposite the first side, a primary doped region of a first conductivity type at the first side of the semiconductor body, a primary doped region of a second conductivity type opposite the first conductivity type at the second side of the semiconductor body, an enhancement region of the second conductivity type below and adjoining the primary doped region of the first conductivity type, the enhancement region forming an active pn-junction with the primary doped region of the first conductivity type, and a collection region of the first conductivity type interposed between the enhancement region and the primary doped region of the second conductivity type and configured to transport a photocarrier generated in the collection region or the primary doped region of the second conductivity type towards the enhancement region.

A photon avalanche diode includes a semiconductor body having a first side and a second side opposite the first side, a primary doped region of a first conductivity type at the first side of the semiconductor body, a primary doped region of a second conductivity type opposite the first conductivity type at the second side of the semiconductor body, an enhancement region of the second conductivity type below and adjoining the primary doped region of the first conductivity type, the enhancement region forming an active pn-junction with the primary doped region of the first conductivity type, and a collection region of the first conductivity type interposed between the enhancement region and the primary doped region of the second conductivity type and configured to transport a photocarrier generated in the collection region or the primary doped region of the second conductivity type towards the enhancement region.

Techniques for realizing compound semiconductor (CS) optoelectronic devices on silicon (Si) substrates are disclosed. The integration platform is based on heteroepitaxy of CS materials and device structures on Si by direct heteroepitaxy on planar Si substrates or by selective area heteroepitaxy on dielectric patterned Si substrates. Following deposition of the CS device structures, device fabrication steps can be carried out using Si complimentary metal-oxide semiconductor (CMOS) fabrication techniques to enable large-volume manufacturing. The integration platform can enable manufacturing of optoelectronic module devices including photodetector arrays for image sensors and vertical cavity surface emitting laser arrays. Such module devices can be used in various applications including light detection and ranging (LIDAR) systems for automotive and robotic vehicles as well as mobile devices such as smart phones and tablets, and for other perception applications such as industrial vision, artificial intelligence (AI), augmented reality (AR) and virtual reality (VR).

A solid-state image sensor including a photoelectric conversion region partitioned by trenches, a first semiconductor region surrounding the photoelectric conversion region, a first contact in contact with the first semiconductor region at a bottom portion of the trench, a first electrode in contact with the first contact in the first trench, a second semiconductor region in contact with the first semiconductor region having the same conductive type as the first semiconductor region, a third semiconductor region in contact with the second semiconductor region, between the second semiconductor region and a first surface, and having a second conductive type, a second contact on the first surface in contact with the third semiconductor region, and a second electrode in contact with the second contact, and a second surface at which the first contact and the first electrode are in contact with each other is inclined with respect to the first surface.