A light sensitive semiconductor structure comprises: a substrate; a doped upper region of said substrate having a first type of doping; a first implant region located below and being in direct contact with said doped upper region, said first implant region having a second type of doping so that a pn-junction is located between said doped upper region and said first implant region; and a second implant region located below said first implant region and having said second type of doping, and wherein a peak in a doping profile of said second type of doping is located in said second implant region.

Structures for a single-photon avalanche diode and methods of forming a structure for a single-photon avalanche diode. The structure includes a semiconductor substrate having a top surface, a semiconductor layer on the top surface of the semiconductor substrate, a light-absorbing layer on a portion of the semiconductor layer, and a doped region in the portion of the semiconductor layer. The doped region is positioned in the portion of the semiconductor layer adjacent to the light-absorbing layer.

According to one embodiment, an electronic apparatus includes a light source, a detector, an equalizer and a processing circuitry. The light source is configured to emit a pulse having a first output value and a first frequency response. The detector is configured to detect a reflected wave of the pulse and convert the reflected wave to a first electric signal. The reflected wave of the pulse is received after the pulse is reflected by an object. The equalizer is configured to equalize the first electric signal using tap coefficients to generate a second electric signal. The tap coefficients are based on at least either one of the first output value and the first frequency response. The processing circuitry is configured to estimate a distance to the object based on the second electric signal.

According to one embodiment, an electronic apparatus includes a light source, a detector, an equalizer and a processing circuitry. The light source is configured to emit a pulse having a first output value and a first frequency response. The detector is configured to detect a reflected wave of the pulse and convert the reflected wave to a first electric signal. The reflected wave of the pulse is received after the pulse is reflected by an object. The equalizer is configured to equalize the first electric signal using tap coefficients to generate a second electric signal. The tap coefficients are based on at least either one of the first output value and the first frequency response. The processing circuitry is configured to estimate a distance to the object based on the second electric signal.

A single photon avalanche diode (SPAD) device comprises: a silicon layer; an active region in said silicon layer for detecting incident light; and a blocking structure overlapping said active region for blocking incident light having a wavelength at least in the range of 200 nm to 400 nm, so that light having said wavelength can only be detected by said SPAD device when incident upon a region of said silicon layer outside of said active region.

A single photon avalanche diode (SPAD) device comprises: a silicon layer; an active region in said silicon layer for detecting incident light; and a blocking structure overlapping said active region for blocking incident light having a wavelength at least in the range of 200 nm to 400 nm, so that light having said wavelength can only be detected by said SPAD device when incident upon a region of said silicon layer outside of said active region.

In a light detection device, a circuit substrate includes a plurality of signal processing units which process a detection signal output from a corresponding pixel. Light-receiving regions of a plurality of avalanche photodiodes are two-dimensionally arranged for every pixel. In each of the signal processing units, a timing measurement unit measures timing at which light is incident on a corresponding pixel, based on the detection signal. An energy measurement unit measures energy of light incident on a corresponding pixel, based on the detection signal. A storage unit stores a measurement result in the timing measurement unit and the energy measurement unit. A light detection region where a plurality of the pixels are provided and a signal processing region where a plurality of the signal processing units are provided overlap each other at least at a part.

Described examples include a receiver having a beam splitter arranged to receive reflected light from a scene illuminated by a transmitted light signal, the beam splitter structured to provide at least two copies of the reflected light including at least two regions having sub-regions, wherein the sub-regions are not adjacent to each other. The receiver also includes a first sensor array arranged to receive one region of the reflected light and provide an output representative of that region of the reflected light. The receiver also includes a second sensor array arranged to receive the other region of the reflected light and provide a second output representative of the second region of the reflected light. The receiver also includes a combiner arranged to receive the outputs of the sensor arrays to provide a combined representation of the reflected light.

Described examples include a receiver having a beam splitter arranged to receive reflected light from a scene illuminated by a transmitted light signal, the beam splitter structured to provide at least two copies of the reflected light including at least two regions having sub-regions, wherein the sub-regions are not adjacent to each other. The receiver also includes a first sensor array arranged to receive one region of the reflected light and provide an output representative of that region of the reflected light. The receiver also includes a second sensor array arranged to receive the other region of the reflected light and provide a second output representative of the second region of the reflected light. The receiver also includes a combiner arranged to receive the outputs of the sensor arrays to provide a combined representation of the reflected light.

There is provided an image sensor employing an avalanche diode. The image sensor includes a plurality of pixel circuits arranged in a matrix, a plurality of pulling circuits and a global current source circuit. Each of the plurality of pixel circuits includes a single photon avalanche diode and four P-type or N-type transistors. Each of the plurality of pulling circuits is arranged corresponding to one pixel circuit column. The global current source circuit is used to form a current mirror with each of the plurality of pulling circuits.