An optical sensor includes an avalanche multiplication region including a first multiplication region having a first conductive type and a second multiplication region having a second conductive type, each of the first multiplication region and the second multiplication region being formed in a layer shape, a charge collection region having the second conductive type disposed on a first side of the second multiplication region, and a first conductive region having the first conductive type disposed on the first side of the second multiplication region. The second multiplication region has a first portion overlapping the charge collection region in a thickness direction of the first multiplication region and the second multiplication region and a second portion overlapping the first conductive region in the thickness direction. A concentration of impurities in the first portion is higher than a concentration of impurities in the second portion.

An optical sensor includes an avalanche multiplication region including a first multiplication region having a first conductive type and a second multiplication region having a second conductive type, each of the first multiplication region and the second multiplication region being formed in a layer shape, a charge collection region having the second conductive type disposed on a first side of the second multiplication region, and a first conductive region having the first conductive type disposed on the first side of the second multiplication region. The second multiplication region has a first portion overlapping the charge collection region in a thickness direction of the first multiplication region and the second multiplication region and a second portion overlapping the first conductive region in the thickness direction. A concentration of impurities in the first portion is higher than a concentration of impurities in the second portion.

An optical sensing device includes a light source, which emits one or more beams of light pulses toward a target scene at respective angles about a transmit axis of the light source. A first array of single-photon detectors output electrical pulses in response to photons that are incident thereon. A second array of counters count the electrical pulses output during respective count periods by respective sets of one or more of the single-photon detectors. Light collection optics form an image of the target scene on the first array along a receive axis, which is offset transversely relative to the transmit axis, thereby giving rise to a parallax shift as a function of distance between the target scene and the device. Control circuitry sets the respective count periods of the counters, responsively to the parallax shift, to cover different, respective time intervals following each of the light pulses.

An optical sensing device includes a light source, which emits one or more beams of light pulses toward a target scene at respective angles about a transmit axis of the light source. A first array of single-photon detectors output electrical pulses in response to photons that are incident thereon. A second array of counters count the electrical pulses output during respective count periods by respective sets of one or more of the single-photon detectors. Light collection optics form an image of the target scene on the first array along a receive axis, which is offset transversely relative to the transmit axis, thereby giving rise to a parallax shift as a function of distance between the target scene and the device. Control circuitry sets the respective count periods of the counters, responsively to the parallax shift, to cover different, respective time intervals following each of the light pulses.

There is provided an image sensor employing an avalanche diode. The image sensor includes a plurality of pixel circuits arranged in a matrix, a plurality of pulling circuits and a global current source circuit. Each of the plurality of pixel circuits includes a single photon avalanche diode (SPAD) and a floating diffusion. Each of the plurality of pulling circuits is arranged corresponding to one pixel circuit column. The global current source circuit is used to form a current mirror with each of the plurality of pulling circuits. The floating diffusion is used to record a voltage of one photon event detected by the SPAD in an exposure period.

The photoelectric conversion device includes a pixel including a photoelectric conversion unit that outputs a pulse in response to incidence of a photon and a pulse counting unit that counts the pulse. The pulse counting unit includes first and second counters, a selection circuit for selecting a signal input to the first and second counters, and a control unit. The control unit controls the selection circuit to perform a first connection mode in which a counter of a first number of bits is configured by the first and second counters, and a second connection mode in which a counter of a second number of bits smaller than the first number of bits is configured by at least one of the first and second counters. The second connection mode includes a third connection mode in which pulses are counted in parallel by the first and second counters.

The photoelectric conversion device includes a pixel including a photoelectric conversion unit that outputs a pulse in response to incidence of a photon and a pulse counting unit that counts the pulse. The pulse counting unit includes first and second counters, a selection circuit for selecting a signal input to the first and second counters, and a control unit. The control unit controls the selection circuit to perform a first connection mode in which a counter of a first number of bits is configured by the first and second counters, and a second connection mode in which a counter of a second number of bits smaller than the first number of bits is configured by at least one of the first and second counters. The second connection mode includes a third connection mode in which pulses are counted in parallel by the first and second counters.

An imaging device includes a first chip. The first chip includes a first pixel and a second pixel. The first pixel includes a first anode region and a first cathode region, and the second pixel includes a second anode region and a second cathode region. The first chip includes a first wiring layer. The first wiring layer includes a first anode electrode, a first anode via coupled to the first anode electrode and the first anode region, and a second anode via coupled to the first anode electrode and the second anode region.

An image pickup element using an APD is provided. The image pickup element has a first substrate, a second substrate, and a connector. The first substrate is provided with a plurality of light receivers having the APD. The second substrate has a pixel circuit that corresponds to each of the APDs. Additionally, the connector electrically connects the APD and the pixel circuit corresponding to the APD.

An image pickup element using an APD is provided. The image pickup element has a first substrate, a second substrate, and a connector. The first substrate is provided with a plurality of light receivers having the APD. The second substrate has a pixel circuit that corresponds to each of the APDs. Additionally, the connector electrically connects the APD and the pixel circuit corresponding to the APD.