[Object] Provided are a light receiving device and a light receiving circuit that are capable of performing highly accurate ranging with an increased field of view (FOV).

[Solving Means] A light receiving device according to the present disclosure includes a light detector array including a plurality of pixels each configured to output a pulse in response to a reaction of a light detector with a photon, a counter circuit configured to count the pulse outputted from at least one of the pixels of the light detector array, and a control circuit configured to select, from the light detector array, one of the pixels to be enabled and one of the pixels to be disabled, on the basis of the number of counts of the pulse from the counter circuit.

An orientation-position determining device is provided which is used for a sensor installed in a vehicle. The orientation-position determining device includes an imaging unit and an orientation-position detector. The imaging unit works to obtain a ranging image and an ambient light image from the sensor. The ranging image represents a distance to a target lying in a light emission region to which light is emitted from the sensor. The ambient light image represents an intensity of ambient light and has a resolution higher than that of the ranging image. The orientation-position detector works to use the ranging image and the ambient light image to detect an orientation and/or a position of the sensor.

Techniques for realizing compound semiconductor (CS) optoelectronic devices on silicon (Si) substrates for vehicle applications are disclosed. The integration platform is based on heteroepitaxy of CS materials and device structures on Si by direct heteroepitaxy on planar Si substrates or by selective area heteroepitaxy on dielectric patterned Si substrates. Following deposition of the CS device structures, device fabrication steps can be carried out using Si complimentary metal-oxide semiconductor (CMOS) fabrication techniques to enable large-volume manufacturing. The integration platform can enable manufacturing of optoelectronic devices including photodetector arrays for image sensors and vertical cavity surface emitting laser arrays. Such devices can be used in various applications including light detection and ranging (LIDAR) systems for vehicle apparatuses such as automobiles, boats, airplanes, and drones, and for other perception applications such as industrial vision, artificial intelligence (AI), augmented reality (AR) and virtual reality (VR).

Provided are a single-photon avalanche diode (SPAD) pixel structure and a method of manufacturing the same. More particularly, provided are a SPAD pixel structure and a method of manufacturing the same, including an additional PN junction in a vertical or horizontal direction to increase photon detection efficiency and thus improve the sensitivity in an imaging device.

Provided are a single-photon avalanche diode (SPAD) pixel structure and a method of manufacturing the same. More particularly, provided are a SPAD pixel structure and a method of manufacturing the same, including an additional PN junction in a vertical or horizontal direction to increase photon detection efficiency and thus improve the sensitivity in an imaging device.

A photodetector structure over a partial length of a silicon waveguide structure within a photonic integrated circuit (PIC) chip. The photodetector structure is embedded within a cladding material surrounding the waveguide structure. The photodetector structure includes an absorption region, for example comprising Ge. A sidewall of the cladding material may be lined with a sacrificial spacer. After forming the absorption region, the sacrificial spacer may be removed and passivation material formed over a sidewall of the absorption region. Between the absorption region an impurity-doped portion of the waveguide structure there may be a carrier multiplication region, for example comprising crystalline silicon. If present, edge facets of the carrier multiplication region may be protected by a spacer material during the formation of an impurity-doped charge carrier layer. Occurrence of edge facets may be mitigated by embedding a portion of the photodetector structure with a thickness of the waveguide structure.

Techniques for realizing compound semiconductor (CS) optoelectronic devices on silicon (Si) substrates for mobile applications are disclosed. The integration platform is based on heteroepitaxy of CS materials and device structures on Si by direct heteroepitaxy on planar Si substrates or by selective area heteroepitaxy on dielectric patterned Si substrates. Following deposition of the CS device structures, device fabrication steps can be carried out using Si complimentary metal-oxide semiconductor (CMOS) fabrication techniques to enable large-volume manufacturing. The integration platform can enable manufacturing of optoelectronic devices including photodetector arrays for image sensors and vertical cavity surface emitting laser arrays. Such devices can be used in various applications including light detection and ranging (LIDAR) systems for mobile devices such as smart phones and tablets, and for other perception applications such as industrial vision, artificial intelligence (AI), augmented reality (AR) and virtual reality (VR).

Techniques for realizing compound semiconductor (CS) optoelectronic devices on silicon (Si) substrates for vehicle applications are disclosed. The integration platform is based on heteroepitaxy of CS materials and device structures on Si by direct heteroepitaxy on planar Si substrates or by selective area heteroepitaxy on dielectric patterned Si substrates. Following deposition of the CS device structures, device fabrication steps can be carried out using Si complimentary metal-oxide semiconductor (CMOS) fabrication techniques to enable large-volume manufacturing. The integration platform can enable manufacturing of optoelectronic devices including photodetector arrays for image sensors and vertical cavity surface emitting laser arrays. Such devices can be used in various applications including light detection and ranging (LIDAR) systems for vehicle apparatuses such as automobiles, boats, airplanes, and drones, and for other perception applications such as industrial vision, artificial intelligence (AI), augmented reality (AR) and virtual reality (VR).

An exemplary wearable brain interface system includes a head-mountable component and a control system. The head-mountable component includes an array of photodetectors that includes a photodetector comprising a single-photon avalanche diode (SPAD) and a fast-gating circuit configured to arm and disarm the SPAD. The control system is for controlling a current drawn by the array of photodetectors.

An exemplary wearable brain interface system includes a head-mountable component and a control system. The head-mountable component includes an array of photodetectors that includes a photodetector comprising a single-photon avalanche diode (SPAD) and a fast-gating circuit configured to arm and disarm the SPAD. The control system is for controlling a current drawn by the array of photodetectors.