Methods and materials for growing TMD materials on substrates and making semiconductor devices are described. Metal contacts may be created prior to conducting a deposition process such as chemical vapor deposition (CVD) to grow a TMD material, such that the metal contacts serve as the seed/catalyst for TMD material growth. A method of making a semiconductor device may include conducting a lift-off lithography process on a substrate to produce a substrate having metal contacts deposited thereon in lithographically defined areas, and then growing a TMD material on the substrate by a deposition process to make a semiconductor device. Further described are semiconductor devices having a substrate with metal contacts deposited thereon in lithographically defined areas, and a TMD material on the substrate, where the TMD material is a continuous, substantially uniform monolayer film between and on the metal contacts, where the metal contacts are chemically bonded to the TMD material.

A single-crystal β-Ga.sub.2O.sub.3 MSM detector and a preparation method thereof, comprising: machining grooves on a single-crystal β-Ga.sub.2O.sub.3 substrate using a laser-assisted waterjet machining technique to form a 3D shape; wet etching the machined single-crystal β-Ga.sub.2O.sub.3 substrate using an HF solution to remove machining damage; performing Au evaporation on a surface of the single-crystal β-Ga.sub.2O.sub.3 substrate after processing, coating an Au thin film on the surface of the single-crystal β-Ga.sub.2O.sub.3 substrate; and grinding the surface of the single-crystal β-Ga.sub.2O.sub.3 substrate after evaporation to remove the Au thin film on an undressed surface and retain the Au thin film in the grooves, and then obtaining the single-crystal β-Ga.sub.2O.sub.3 MSM detector.

The present disclosure relates to a light detection device including: a substrate 100; a lower electrode 200 formed on the substrate; an organic semiconductor layer 300 formed on the lower electrode 200; and an upper electrode 400 formed on the organic semiconductor layer 300, wherein a Schottky contact is formed at least one of a junction between the organic semiconductor layer and the lower electrode or a junction between the organic semiconductor layer and the upper electrode.

The present disclosure relates to a light detection device including: a substrate 100; a lower electrode 200 formed on the substrate; an organic semiconductor layer 300 formed on the lower electrode 200; and an upper electrode 400 formed on the organic semiconductor layer 300, wherein a Schottky contact is formed at least one of a junction between the organic semiconductor layer and the lower electrode or a junction between the organic semiconductor layer and the upper electrode.

An optically gated transistor (OGT) device that may be used as a selector device for one or more variable resistive memory devices. The OGT device isolates the one or more variable resistive memory devices when the OGT is not optically activated. The amount of current conducted by the OGT device is dependent on an intensity of light optically applied to the OGT device. The OGT device includes alternating layers of germanium selenide (GeSe) and GeSe plus an additional element deposited on a substrate. The OGT device includes only two electrodes connected to the alternating layers deposited on the substrate. The OGT device may generate an amplified electrical signal with respect to the magnitude of a received optical signal. The OGT device may be used to generate an optical signal having a different wavelength than the wavelength of a received optical signal.

Integrated optical filter and photodetectors and methods of fabrication thereof are described herein according to the present disclosure. An example of an integrated optical filter and photodetector described herein includes a substrate, an insulator layer on the substrate, and a semiconductor layer on the insulator layer. An optical filter having a resonant cavity is formed in or on the semiconductor layer. The integrated optical filter and photodetector further includes two first metal fingers and a second metal finger interdigitated between the two first metal fingers on the semiconductor layer forming Schottky barriers. The first metal fingers are constructed from a different metal relative to the second metal finger.

An optoelectronic integrated substrate, a preparation method thereof and an optoelectronic integrated circuit. The electronic integrated substrate includes a base substrate and an electronic device and a photo-diode disposed on the base substrate, wherein the photo-diode includes an ohmic contact layer and an intrinsic amorphous silicon layer, and the ohmic contact layer and the intrinsic amorphous silicon layer are sequentially arranged along a direction parallel to the plane of the base substrate and are connected.

Provided is a semiconductor device including: a semiconductor layer having an uneven structure configured to include a recessed portion on one surface side thereof; a first electrode film (first deposited film) provided on the one surface of the semiconductor layer; and a second electrode film (second deposited film) provided on a bottom surface of the recessed portion, wherein an enlarged portion having a cross-sectional area enlarged with respect to a portion on an opening portion side of the recessed portion is provided.

The present disclosure discloses an infrared sensor, an infrared gas detector and an air quality detection device. The infrared sensor includes electrodes, a substrate, an isolation layer and a graphene film. The graphene film has a periodical nanostructure. The infrared sensor enhances the absorption of infrared light, and is capable of only absorbing specific infrared wavelengths, thus improving the selective performance of the infrared gas detector.

The present disclosure relates to a light detection device including: a substrate 100; a lower electrode 200 formed on the substrate; an organic semiconductor layer 300 formed on the lower electrode 200; and an upper electrode 400 formed on the organic semiconductor layer 300, wherein a Schottky contact is formed at least one of a junction between the organic semiconductor layer and the lower electrode or a junction between the organic semiconductor layer and the upper electrode.