A photoelectric detection structure, a manufacturing method therefor, and a photoelectric detector. The photoelectric detection structure includes: a base substrate; an electrode strip, which is located on the base substrate; a semiconductor layer, which is located at a side of the base substrate that faces the electrode strip; an insulating layer, which is located between the electrode strip and the semiconductor layer, the insulating layer including a thickness-increased portion, and the thickness-increased portion being located on at least one edge of the electrode strip.

An electrical readout optical sensor, includes a back metal electrode layer, a semiconductor layer, and a metal or metalloid layer; wherein the semiconductor layer is a main body portion and is divided into a first surface and a second surface; the first surface is provided with a groove structure, and forms a grating; the back metal electrode layer covers the second surface of the semiconductor layer; the metal or metalloid layer covers the first surface of the semiconductor layer, and forms a phototube for generating a photocurrent signal having a wide wavelength range and high linearity. An optical sensing structure of narrowband light absorption and a photoelectric conversion structure having a wide wavelength range are directly integrated, and the portable high-precision optical sensing ability is implemented by means of an output mode of a photocurrent.

An electrical readout optical sensor, includes a back metal electrode layer, a semiconductor layer, and a metal or metalloid layer; wherein the semiconductor layer is a main body portion and is divided into a first surface and a second surface; the first surface is provided with a groove structure, and forms a grating; the back metal electrode layer covers the second surface of the semiconductor layer; the metal or metalloid layer covers the first surface of the semiconductor layer, and forms a phototube for generating a photocurrent signal having a wide wavelength range and high linearity. An optical sensing structure of narrowband light absorption and a photoelectric conversion structure having a wide wavelength range are directly integrated, and the portable high-precision optical sensing ability is implemented by means of an output mode of a photocurrent.

An electricity measuring type surface plasmon resonance sensor including: a plasmon polariton intensifying sensor chip in which a prism and a sensor chip including a transparent electrode, an n-type transparent semiconductor film, and a plasmon resonance film electrode arranged in this order are arranged in an order of the prism, the transparent electrode, the n-type transparent semiconductor film, and the plasmon resonance film electrode; and an electric measuring apparatus which directly measures a current or voltage from the transparent electrode and the plasmon resonance film electrode.

An electricity measuring type surface plasmon resonance sensor including: a plasmon polariton intensifying sensor chip in which a prism and a sensor chip including a transparent electrode, an n-type transparent semiconductor film, and a plasmon resonance film electrode arranged in this order are arranged in an order of the prism, the transparent electrode, the n-type transparent semiconductor film, and the plasmon resonance film electrode; and an electric measuring apparatus which directly measures a current or voltage from the transparent electrode and the plasmon resonance film electrode.

An antenna electrode including a first electrode that includes a core and a first conductive surface; a second electrode that includes a second conductive surface; and an electrical tunnel junction between the first conductive surface and the second conductive surface, the tunnel junction having a gap width greater than about 0.1 nm and less than about 10 nm.

A photodetector element according to an aspect of the present disclosure includes a semiconductor layer with an uneven structure on one surface side that is constituted of projection portions and recess portions, and converts light into surface plasmons, and a metal film that is provided on the one surface side of the semiconductor layer in a manner corresponding to the uneven structure and a Schottky junction is formed between the metal film and the semiconductor layer. The semiconductor layer is constituted of n-type conductive silicon, and the other surface side of the semiconductor layer serves as an incident surface for light. The metal film is constituted of a material including nickel which form the Schottky junction when combined with the semiconductor layer.

Disclosed is a photodetector in which a plurality of conductive stripes spaced apart from each other are bonded onto a two-dimensional semiconductor thin-film, and a pitch between adjacent conductive stripes is controlled to selectively adjust a plasmonic resonance wavelength zone, such that the photodetector has a high absorbance and a wide detection zone at the same time. Further, a manufacturing method thereof is disclosed. The photodetector includes a semiconductor thin-film; and a plurality of conductive stripes bonded onto the semiconductor thin-film and extending in a parallel manner to each other and spaced apart from each other.

The subject matter of this specification can be embodied in, among other things, a photodetector that includes a semiconductor substrate, a semiconductor annulus on a planar face the semiconductor substrate, and a metal layer on the semiconductor substrate, wherein the metal layer comprises a first region surrounding the semiconductor annulus and comprises a second region filling an interior region to the semiconductor annulus, and the metal layer in the first region forms a Schottky junction with the semiconductor ring.

The subject matter of this specification can be embodied in, among other things, a photodetector that includes a semiconductor substrate, a semiconductor annulus on a planar face the semiconductor substrate, and a metal layer on the semiconductor substrate, wherein the metal layer comprises a first region surrounding the semiconductor annulus and comprises a second region filling an interior region to the semiconductor annulus, and the metal layer in the first region forms a Schottky junction with the semiconductor ring.