A semiconductor device that generates or detects terahertz waves includes a semiconductor layer that has a gain of the generated or detected terahertz waves; a first electrode connected to the semiconductor layer; a second electrode that is arranged at a side opposite to the side at which the first electrode is arranged with respect to the semiconductor layer and that is electrically connected to the semiconductor layer; a third electrode electrically connected to the second electrode; and a dielectric layer that is arranged around the semiconductor layer and the second electrode and between the first electrode and the third electrode and that is thicker than the semiconductor layer. The dielectric layer includes an area including a conductor electrically connecting the second electrode to the third electrode. The area is filled with the conductor.

A semiconductor device that generates or detects terahertz waves includes a semiconductor layer that has a gain of the generated or detected terahertz waves; a first electrode connected to the semiconductor layer; a second electrode that is arranged at a side opposite to the side at which the first electrode is arranged with respect to the semiconductor layer and that is electrically connected to the semiconductor layer; a third electrode electrically connected to the second electrode; and a dielectric layer that is arranged around the semiconductor layer and the second electrode and between the first electrode and the third electrode and that is thicker than the semiconductor layer. The dielectric layer includes an area including a conductor electrically connecting the second electrode to the third electrode. The area is filled with the conductor.

The exemplified systems, and method thereof, includes PLZT thin film (Pb.sub.0.95La.sub.0.05Zr.sub.0.54Ti.sub.0.46O.sub.3) paired with a bottom metal and top transparent conductive oxide, that forms a capacitor structure with enhanced photocurrent and power conversion efficiency. The exemplified systems use metal electrode (platinum) as bottom electrode and a transparent oxide (Indium Tin OxideITO) as the top electrode. In some embodiments, the capacitor structure are used in a solar cells, ultraviolet sensors, or UV indexing sensors. In some embodiments, the capacitor structure are energy generation or for medical diagnostics (e.g., for skin care application).

The exemplified systems, and method thereof, includes PLZT thin film (Pb.sub.0.95La.sub.0.05Zr.sub.0.54Ti.sub.0.46O.sub.3) paired with a bottom metal and top transparent conductive oxide, that forms a capacitor structure with enhanced photocurrent and power conversion efficiency. The exemplified systems use metal electrode (platinum) as bottom electrode and a transparent oxide (Indium Tin OxideITO) as the top electrode. In some embodiments, the capacitor structure are used in a solar cells, ultraviolet sensors, or UV indexing sensors. In some embodiments, the capacitor structure are energy generation or for medical diagnostics (e.g., for skin care application).

According to one embodiment, a photon counting-type radiation detector includes a first cell and a second cell. The first cell transmits radiation. The second cell is stacked with the first cell. The second cell absorbs the radiation passing through the first cell.

According to one embodiment, a photon counting-type radiation detector includes a first cell and a second cell. The first cell transmits radiation. The second cell is stacked with the first cell. The second cell absorbs the radiation passing through the first cell.

A broad-spectral-bandwidth photodetector designed for use with all types of optical fibers used in different avionics networks and sensors and a process for fabricating such photodetectors. A Schottky barrier photodetector is provided that includes germanium, which has a broad spectral response to light in the ultraviolet to near-infrared range (220 to 1600 nm). The provision of a photodetector having a broad spectral response avoids the use of multiple different types of photodetectors and receivers in an avionics platform with different optical fiber networks and sensors.

A broad-spectral-bandwidth photodetector designed for use with all types of optical fibers used in different avionics networks and sensors and a process for fabricating such photodetectors. A Schottky barrier photodetector is provided that includes germanium, which has a broad spectral response to light in the ultraviolet to near-infrared range (220 to 1600 nm). The provision of a photodetector having a broad spectral response avoids the use of multiple different types of photodetectors and receivers in an avionics platform with different optical fiber networks and sensors.

An adjustable hyperspectral detection chip enhanced by a multi-resonance plasmonic mechanism. The detection chip consists of an array of metal nanonail resonator detection units. Each detection unit (1) comprises: a bottom electrode (2), a semiconductor material layer (3), a spacer layer (4), a nanonail array (5), a control material layer (6), a top electrode (7), a peripheral control signal (8), and a driving circuit (9). The positional relationship from top to bottom is the top electrode (7), the control material layer (6), the nanonail array (5), the spacer layer (4), the semiconductor material layer (3), and the bottom electrode (2). The nanonail array (5) is loaded inside the control material layer (6), and the peripheral control signal (8) and the driving circuit (9) are connected to both sides of the control material layer (6).

The present disclosure provides a photodiode which maintains a photodiode characteristic even after the metal-assisted chemical etching and uses a metal-semiconductor structure having low reflectance and high conductance, a manufacturing method thereof, and a solar cell using the same. The photodiode of the present disclosure includes a semiconductor substrate with a low reflective and high conductive surface which has a selectively etched electrode formation area and a high conductive electrode formed by placing a metal catalyst used for a metal-assisted chemical etching process for forming an antireflection semiconductor substrate in an etching area of the antireflection semiconductor substrate.