An electromagnetic wave detector includes a semiconductor layer, a two-dimensional material layer electrically connected to the semiconductor layer, a first electrode electrically connected to the two-dimensional material layer without the semiconductor layer interposed therebetween, a second electrode electrically connected to the two-dimensional material layer with the semiconductor layer interposed therebetween, and a ferroelectric layer in contact with at least a part of the two-dimensional material layer.

An electromagnetic wave detector includes a semiconductor layer, a two-dimensional material layer electrically connected to the semiconductor layer, a first electrode electrically connected to the two-dimensional material layer without the semiconductor layer interposed therebetween, a second electrode electrically connected to the two-dimensional material layer with the semiconductor layer interposed therebetween, and a ferroelectric layer in contact with at least a part of the two-dimensional material layer.

Photodetectors are fabricated on GaAs substrate using dilute nitride technology for high speed-high-sensitivity operation for telecom and datacom applications for the wavelength ranges covering O-band (Original band: 1260 nm to 1360) to C-band (conventional band: 1530-1565 nm).

Disclosed herein is a system for detecting cancer cells. The system includes a biosensor comprising a graphene-Si Schottky junction, a light source placed above the biosensor, an electrical stimulator-analyzer connected to the biosensor, and a processing unit connected to the electrical stimulator-analyzer and the light source. The processing unit is configured to perform a method. The method includes generating a set of photocurrents in a reverse bias regime passed through the graphene-Si Schottky junction with a sample placed thereon utilizing the light source and the electrical stimulator-analyzer, measuring the set of the generated photocurrents through the graphene-semiconductor Schottky junction in reverse bias regime in the presence of the sample utilizing the electrical stimulator-analyzer device, and detecting a presence of cancer cells in the sample responsive to detecting a change in the measured set of the generated photocurrents within the reverse bias regime.

Disclosed herein is a system for detecting cancer cells. The system includes a biosensor comprising a graphene-Si Schottky junction, a light source placed above the biosensor, an electrical stimulator-analyzer connected to the biosensor, and a processing unit connected to the electrical stimulator-analyzer and the light source. The processing unit is configured to perform a method. The method includes generating a set of photocurrents in a reverse bias regime passed through the graphene-Si Schottky junction with a sample placed thereon utilizing the light source and the electrical stimulator-analyzer, measuring the set of the generated photocurrents through the graphene-semiconductor Schottky junction in reverse bias regime in the presence of the sample utilizing the electrical stimulator-analyzer device, and detecting a presence of cancer cells in the sample responsive to detecting a change in the measured set of the generated photocurrents within the reverse bias regime.

Discussed is a photodiode and a method for manufacturing the photodiode. The photodiode can include a semiconductor substrate, an insulating layer on the semiconductor substrate, an electrode on the insulating layer; and a graphene layer on the semiconductor substrate, the insulating layer, and the electrode, wherein the insulating layer can include an ion gel.

Discussed is a photodiode and a method for manufacturing the photodiode. The photodiode can include a semiconductor substrate, an insulating layer on the semiconductor substrate, an electrode on the insulating layer; and a graphene layer on the semiconductor substrate, the insulating layer, and the electrode, wherein the insulating layer can include an ion gel.

The subject matter of this specification can be embodied in, among other things, a photodetector that includes a semiconductor substrate, a semiconductor annulus on a planar face of the semiconductor substrate, and a metal layer on the semiconductor substrate, wherein the metal layer comprises a first region surrounding the semiconductor annulus and comprises a second region filling an interior region to the semiconductor annulus, and the metal layer in the first region forms a Schottky junction with the semiconductor ring.

The subject matter of this specification can be embodied in, among other things, a photodetector that includes a semiconductor substrate, a semiconductor annulus on a planar face of the semiconductor substrate, and a metal layer on the semiconductor substrate, wherein the metal layer comprises a first region surrounding the semiconductor annulus and comprises a second region filling an interior region to the semiconductor annulus, and the metal layer in the first region forms a Schottky junction with the semiconductor ring.

The present disclosure provides a semiconductor device that may reduce the size of the semiconductor device and a manufacturing method thereof. A silicon layer is provided in a first region of on a sapphire substrate, and a silicon device is formed on the silicon layer. An oxide semiconductor layer is provided in a second region on the sapphire substrate, and an oxide semiconductor device is formed in the oxide semiconductor layer. The silicon device is connected to the oxide semiconductor device by plural wiring lines formed in a wiring line layer.