A semiconductor device includes a silicon substrate and a detection element and p-type and n-type MOS transistors, which are arranged on the silicon substrate, wherein the detection element includes a semiconductor layer, electrodes, and a Schottkey barrier disposed therebetween, the semiconductor layer is arranged just above a layer having the same composition and height as those of an impurity diffusion layer in the source or drain of the p-type or n-type MOS transistor, a region, in the silicon substrate, having the same composition and height as those of a channel region, in the silicon substrate, just below a gate oxide film of the p-type MOS transistor or the n-type MOS transistor, or a region, in the silicon substrate, having the same composition and height as those of a region just below a field oxide film disposed between the p-type and the n-type MOS transistor.

An ultraviolet (UV) photo-detecting device, including: a substrate; a first nitride layer disposed on the substrate; a second nitride layer disposed between the first nitride layer and the substrate; a light absorption layer disposed on the first nitride layer; and a Schottky junction layer disposed on the light absorption layer.

An ultraviolet (UV) photo-detecting device, including: a substrate; a first nitride layer disposed on the substrate; a second nitride layer disposed between the first nitride layer and the substrate; a light absorption layer disposed on the first nitride layer; and a Schottky junction layer disposed on the light absorption layer.

The present application relates to semiconductor photodetectors, in particular to a silicon carbide-based UV-visible-NIR full-spectrum-responsive photodetector and a method for fabricating the same. The photodetector includes a silicon carbide substrate, and metal counter electrodes and a surface plasmon polariton nanostructure arranged thereon. The silicon carbide substrate and the metal counter electrodes constitute a metal-semiconductor-metal photodetector with coplanar electrodes. When the ultraviolet light is input, free carriers directly generated in silicon carbide are collected by an external circuit to generate electrical signals. When the visible light is input, hot carriers generated in the surface plasmon polariton nanostructure tunnel into the silicon carbide semiconductor to become free carriers to generate electrical signals.

A light detection device includes a substrate, a buffer layer disposed on the substrate, a first band gap change layer disposed on a portion of the buffer layer, a light absorption layer disposed on the first band gap change layer, a Schottky layer disposed on a portion of the light absorption layer, and a first electrode layer disposed on a portion of the Schottky layer.

A light detection device includes a substrate, a buffer layer disposed on the substrate, a first band gap change layer disposed on a portion of the buffer layer, a light absorption layer disposed on the first band gap change layer, a Schottky layer disposed on a portion of the light absorption layer, and a first electrode layer disposed on a portion of the Schottky layer.

A plasmonic photoconductor sensing platform is provided. The plasmonic photoconductor sensing platform includes an insulating substrate; a semiconducting film placed on top of the insulating substrate; two metal contacts placed at least in part on the semiconducting film to enforce an electric field; a plurality of plasmonic nanostructures deposited on the semiconducting film and physically separated from metal contacts; an insulating layer, the insulating electrically isolating the plasmonic nanostructures from semiconductor; at least one energy source; and at least one microfluidic channel disposed on the insulating layer.

A plasmonic photoconductor sensing platform is provided. The plasmonic photoconductor sensing platform includes an insulating substrate; a semiconducting film placed on top of the insulating substrate; two metal contacts placed at least in part on the semiconducting film to enforce an electric field; a plurality of plasmonic nanostructures deposited on the semiconducting film and physically separated from metal contacts; an insulating layer, the insulating electrically isolating the plasmonic nanostructures from semiconductor; at least one energy source; and at least one microfluidic channel disposed on the insulating layer.

An optical device includes: a silicon substrate in which a plane direction of a crystal plane of a principal surface is a (111) plane, the principal surface having an uneven structure; and a conductor that is joined to the silicon substrate by Schottky junction, in which the conductor is directly joined to a (111) plane of at least one of a protruding portion or a depressed portion in the uneven structure.

An optical device includes: a silicon substrate in which a plane direction of a crystal plane of a principal surface is a (111) plane, the principal surface having an uneven structure; and a conductor that is joined to the silicon substrate by Schottky junction, in which the conductor is directly joined to a (111) plane of at least one of a protruding portion or a depressed portion in the uneven structure.