An optoelectronic integrated substrate, a preparation method thereof and an optoelectronic integrated circuit. The electronic integrated substrate includes a base substrate and an electronic device and a photo-diode disposed on the base substrate, wherein the photo-diode includes an ohmic contact layer and an intrinsic amorphous silicon layer, and the ohmic contact layer and the intrinsic amorphous silicon layer are sequentially arranged along a direction parallel to the plane of the base substrate and are connected.

A photosensing device with a photovoltage sensing mechanism, a graphene layer and a semiconductor layer. The graphene layer is sandwiched between the semiconductor layer and a substrate. The photovoltage sensing mechanism senses the photovoltage created by light impinging on the graphene-semiconductor heterojunction. The strength of the photovoltage is used to indicate the level of illumination of the impinging light.

A photosensing device with a photovoltage sensing mechanism, a graphene layer and a semiconductor layer. The graphene layer is sandwiched between the semiconductor layer and a substrate. The photovoltage sensing mechanism senses the photovoltage created by light impinging on the graphene-semiconductor heterojunction. The strength of the photovoltage is used to indicate the level of illumination of the impinging light.

A photosensing device with a photovoltage sensing mechanism, a graphene layer and a semiconductor layer. The graphene layer is sandwiched between the semiconductor layer and a substrate. The photovoltage sensing mechanism senses the photovoltage created by light impinging on the graphene-semiconductor heterojunction. The strength of the photovoltage is used to indicate the level of illumination of the impinging light.

A photosensing device with a photovoltage sensing mechanism, a graphene layer and a semiconductor layer. The graphene layer is sandwiched between the semiconductor layer and a substrate. The photovoltage sensing mechanism senses the photovoltage created by light impinging on the graphene-semiconductor heterojunction. The strength of the photovoltage is used to indicate the level of illumination of the impinging light.

Provided is an energy harvesting device, including a solar cell including at least one active layer for receiving a first range of electromagnetic frequencies, at least one layer including antenna structures for receiving RF energy and formed on a first side of the solar cell, and at least one semiconductor for absorbing IR energy, and formed on a second side of the solar cell opposite the first side.

An optical device includes a nanostructure body which induces surface plasmon resonance when irradiated with light, an alloy layer which is in contact with the nanostructure body and which has a lower work function than the nanostructure body, and an n-type semiconductor which is in Schottky contact with the alloy layer. The nanostructure body is composed of one selected from the group consisting of elemental metals, alloys, metal nitrides, and conductive oxides. The alloy layer is composed of at least two metals.

An electricity measuring type surface plasmon resonance sensor includes: a plasmon resonance intensifying sensor chip in which a prism and a sensor chip including an electrode, a silicon semiconductor film, and a plasmon resonance film electrode arranged in this order are arranged in an order of the prism, the electrode, the silicon semiconductor film, and the plasmon resonance film electrode; and an electric measuring apparatus which directly measures a current or voltage from the electrode and the plasmon resonance film electrode.

An electricity measuring type surface plasmon resonance sensor includes: a plasmon resonance intensifying sensor chip in which a prism and a sensor chip including an electrode, a silicon semiconductor film, and a plasmon resonance film electrode arranged in this order are arranged in an order of the prism, the electrode, the silicon semiconductor film, and the plasmon resonance film electrode; and an electric measuring apparatus which directly measures a current or voltage from the electrode and the plasmon resonance film electrode.

A photomemcapacitor device comprising a metal oxide semiconductor material is provided. The photocapacitor device comprises a p-n junction and a Schottky junction. A photomemcapacitor is provided for responding to photons at specified wavelengths.