A method for producing a device includes depositing a lower electrode metal and a film whose resistance changes. The film whose resistance changes and the lower electrode metal are etched to form a pillar-shaped phase-change layer and a lower electrode. A reset gate insulating film and a reset gate metal are deposited and etched to form reset gates.

Embodiments of mechanisms for forming an image sensor device structure are provided. The image sensor device structure includes a substrate and a transfer transistor formed on the substrate. The image sensor device structure also includes a floating node formed in the substrate and a photosensitive element formed in the substrate. The transfer transistor is formed between the floating node and the photosensitive element, and the photosensitive element includes a first doping region with a lateral doping gradient.

Methods for forming semiconductor structures are provided. The method includes alternately stacking first semiconductor layers and second semiconductor layers over a substrate and patterning the first semiconductor layers and the second semiconductor layers to form a first fin structure. The method further includes forming a first trench in the first fin structure and forming a first source/drain structure in the first trench. The method further includes partially removing the first source/drain structure to form a second trench in the first source/drain structure and forming a first contact in the second trench.

A ranging method uses a light source and a range sensor. The range sensor includes a charge-generating area and first and second charge-accumulating areas. Charges generated in the charge-generating area are transferred to the first charge-accumulating area during a first period so as to be accumulated in the first charge-accumulating area and the second charge-accumulating area during a second period so as to be accumulated in the second charge-accumulating area. A distance d to an object OJ is arithmetized based on a quantity of charges accumulated in the first charge-accumulating area and a quantity of charges accumulated in the second charge-accumulating area. When pulse light is emitted from the light source, the pulse light whose light-intensity stable period within the emission period of the pulse light is set in advance to be longer than each of the first and second periods is emitted from the light source.

The present application provides a display panel and a display device. The display panel includes a plurality of light-sensing circuits and a position detection circuit. The plurality of light-sensing circuits are disposed in the display panel and are arranged in an array. Each of the plurality of light-sensing circuits includes a light-sensing transistor. The present application disposes a quantum dot layer, which can absorb interactive light and convert its light intensity signal into an electrical signal, and determines an irradiation position of the interactive light through the position detection circuit, so that an interaction with light with a longer wavelength can be realized.

The present application provides a control component, a display screen, and a control device. The control component is integrated in a display screen and includes a substrate and a light control structure and a touch control structure arranged side by side on the substrate; the light control structure includes a signal input line, a signal output line, and a photosensitive circuit electrically connected between the signal input line and the signal output line; the touch control structure includes a plurality of receiving electrodes and a plurality of transmitting electrodes; and the receiving electrodes are multiplexed as the signal output line.

The present application provides a control component, a display screen, and a control device. The control component is integrated in a display screen and includes a substrate and a light control structure and a touch control structure arranged side by side on the substrate; the light control structure includes a signal input line, a signal output line, and a photosensitive circuit electrically connected between the signal input line and the signal output line; the touch control structure includes a plurality of receiving electrodes and a plurality of transmitting electrodes; and the receiving electrodes are multiplexed as the signal output line.

A unit pixel element that acts as an image sensor or a solar cell according to the present invention comprises a photo detector that drives a photocurrent flow, induced by light incident onto the gate, along the channel between the source and the drain; a first switch that is wired and switched on or switched off between the source terminal of the photo detector and the first solar cell bus; and a second switch that is wired and switched on or switched off between the gate terminal of the photo detector and the second solar cell bus, and features a function of light energy harvesting and high-efficiency photoelectric conversion that generates and supplies effective electric power.

A monolithic photo detector device disposed on a bulk substrate, comprising a photo detector disposed integrated in the bulk substrate including: (1) a p-type doped impurity region extending along a first direction in the major surface of the substrate and receiving a first voltage, (2) first and second gates being spaced apart from each other and extending in the first direction over the major surface of the substrate, wherein the gates receives a second voltage, (3) an n-type doped impurity region, extending along the first direction in the major surface of the substrate and receiving a third voltage; and (4) a light absorbing region, disposed between the second doped impurity region and the first gate. The device also includes control circuitry, integrated in the substrate to generate the first, second and third voltages that control an operating state of the detector.

A hetero-junction phototransistor with a first layer comprising an InP N buffer and substrate, a second layer comprising an InGaAs N collector on the InP N buffer and substrate, a plurality of InGaAs P bases on the InGaAs N collector layer, and a plurality of InAIAs N emitters is described. Each emitter of the plurality of InAIAs N emitters is on a different base of the plurality of InGaAs P bases. The hetero-junction phototransistor comprises a plurality of InGaAs N+ caps, wherein each cap of the plurality of InGaAs N+ caps is on a different emitter of the plurality of InAIAs N emitters. The hetero-junction phototransistor comprises one or more electrical contacts. Each of the one or more electrical contacts is on a different cap of the plurality of InGaAs N+ caps.