Patent classifications
H
ELECTRICITY
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H01
ELECTRIC ELEMENTS
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H01L
SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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31/00
Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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H01L31/08
in which radiation controls flow of current through the device, e.g. photoresistors
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H01L31/10
characterised by potential barriers, e.g. phototransistors
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H01L31/115
Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
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H01L31/118
of the surface barrier or shallow PN junction detector type, e.g. surface barrier alpha-particle detectors
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H01L31/1185
of the shallow PN junction detector type
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H01L31/1185

CHARGED PARTICLE DETECTOR
20190324162 · 2019-10-24 ·

A charged particle detector is provided. The charged particle detector includes a flexible semiconductor wafer, the semiconductor wafer being doped to form a p-n junction, and an amplifier coupled to the semiconductor wafer and configured to amplify a current or voltage across the p-n junction.

Light detection with semiconductor photodiodes
12176453 · 2024-12-24 · ·

An integrated photodetecting optoelectronic semiconductor component for detecting light bursts in a light signal received by the component includes a silicon photomultiplier for: measuring the intensity of the light signal received by the component, and outputting a measurement signal that is indicative of the light intensity of the received light signal. The component is characterised by a comparator circuit: having a first input section, a second input section and an output section, and operatively connected to the silicon photomultiplier via its first input section.