A light-emitting device includes an epitaxial structure that includes a first semiconductor layer, an active layer and a second semiconductor layer. The light-emitting device further has a transparent current spreading unit, a first electrode and a second electrode. The transparent current spreading unit includes a first transparent current spreading layer and a second transparent current spreading layer. The first transparent current spreading layer is doped with aluminum and has a thickness that accounts for 0.5% to 33% of a thickness of the transparent current spreading unit. The second transparent current spreading layer has a thickness greater than that of the first transparent current spreading layer. A light-emitting apparatus includes a circuit control component, and a light source that is coupled to the circuit control component and that includes the aforesaid light-emitting device.

A display device includes a substrate, a light emitting element on the substrate, and including a first end portion and a second end portion that are aligned in a first direction that is substantially parallel to an upper surface of the substrate, a first contact electrode in contact with the first end portion of the light emitting element, a first electrode on the first contact electrode, and electrically connected to the first end portion of the light emitting element through the first contact electrode, and a second electrode electrically connected to the second end portion of the light emitting element.

A nitride semiconductor light-emitting element includes an active layer comprising at least one well layer, a p-type semiconductor layer located on one side of the active layer, and an electron blocking stack body located between the active layer and the p-type semiconductor layer. The electron blocking stack body includes a first electron blocking layer and a second electron blocking layer that is located on the p-type semiconductor layer side relative to the first electron blocking layer and has a lower Al composition ratio than that of the first electron blocking layer. When a total number of the well layers in the active layer is N, a film thickness of the first electron blocking layer is a film thickness d [nm] and an Al composition ratio of the second electron blocking layer is an Al composition ratio x [%], relationships 0.1N+0.9≤d≤0.2N+2.0 and 10N+40≤x≤10N+60 are satisfied.

A display device includes first banks spaced apart from one another and disposed on a substrate; a first electrode and a second electrode, each disposed on one of the first banks to cover each respective first bank and spaced apart from each other; and a light-emitting element disposed between the first electrode and the second electrode. The light-emitting element includes an active layer, the active layer is in a non-polarized state, and the active layer includes cubic gallium nitride (c-GaN).

A light-emitting diode is provided, including: a first layer of n-doped Al.sub.X1Ga.sub.(1-X1-Y1)In.sub.Y1N, with X1>0 and X1+Y1≤1; a second layer of p-doped Al.sub.X2Ga.sub.(1-X2-Y2)In.sub.Y2N, with X2>0 and X2+Y2≤1; an active area disposed between the first and the second layers and comprising at least one multi-quantum well emissive structure; nanowires based on AlN p-doped with indium and magnesium atoms, disposed on the second layer; and an ohmic contact layer in contact with the nanowires. A method for producing a light-emitting diode is also provided.

A light-emitting device includes a light-emitting laminated structure, a first contact electrode, and an insulating layer. The light-emitting laminated structure has a first surface and a second surface opposite to the first surface, and includes a first semiconductor layer, a second semiconductor layer, and an active layer. The first contact electrode is disposed on the first surface and forms an ohmic contact with the light-emitting laminated structure. The insulating layer is disposed on the light-emitting laminated structure and covers the light-emitting laminated structure and the first contact electrode. The first contact electrode includes a first metal material that has a work function not less than 5 eV and that is in contact with the first surface. A method for producing the light-emitting device is also disclosed.

A compound semiconductor has a high electron concentration of 5×10.sup.19 cm.sup.−3 or higher, exhibits an electron mobility of 46 cm.sup.2/V.Math.s or higher, and exhibits a low electric resistance, and thus is usable to produce a high performance semiconductor device. The present invention provides a group 13 nitride semiconductor of n-type conductivity that may be formed as a film on a substrate having a large area size at a temperature of room temperature to 700° C.

An optoelectronic device having a substrate and a plurality of sets of light-emitting diodes where each set includes a plurality of light-emitting diodes, a first lower electrode, a second upper electrode, an electronic component of an electronic circuit formed in a first portion of the substrate, on the side of the face of the substrate that does not bear the light-emitting diodes, and a first conductive means formed through the first portion and electrically connecting a first terminal of the electronic component to one amongst the first and second electrodes. The first conductive means of a given set is electrically-insulated from the first conductive means of the other sets.

A display device includes a display panel and the display panel includes a pixel. The pixel includes a light emitting unit including at least one light emitting element, a driving transistor providing a driving current corresponding to a data signal to the light emitting unit, and a first transistor electrically connected between both ends of the light emitting unit. A driver provides the data signal to the pixel and provides a duty control signal to the first transistor. The driver varies a voltage level of the data signal in a first grayscale section in which a grayscale corresponding to the data signal is greater than or equal to a reference grayscale, and varies a duty ratio of the duty control signal in a second grayscale section in which the grayscale is less than the reference grayscale.

An inorganic light emitting diode is disclosed. The inorganic light emitting diode includes a first semiconductor layer, a second semiconductor layer having a light emitting surface composed of four sides, an active layer disposed between the first semiconductor layer and the second semiconductor layer, a first electrode coupled to the first semiconductor layer, and a second electrode coupled to the second semiconductor layer, wherein the light emitting surface has a trapezoid shape in which two opposing sides are symmetric with respect to each other.